electronic-components-easy-guide
									
... measured in terms of Lumen ( lm ) or Milli lumen ( mlm ) b. Luminous intensity – is the luminous flux covering a large area. It is measured as Candela ( cd ) or milli candela ( mcd ) Brightness of LED is directly related to its luminous intensity. a. Luminous efficacy - is the emitted light energy r ...
                        	... measured in terms of Lumen ( lm ) or Milli lumen ( mlm ) b. Luminous intensity – is the luminous flux covering a large area. It is measured as Candela ( cd ) or milli candela ( mcd ) Brightness of LED is directly related to its luminous intensity. a. Luminous efficacy - is the emitted light energy r ...
									BASICS OF DIELECTRIC MATERIALS
									
... • Piezoelectricity is a coupling between a material's mechanical and electrical behaviors. • In the simplest of terms, when a piezoelectric material is squeezed, an electric charge collects on its surface. Conversely, when a piezoelectric material is subjected to a voltage drop, it mechanically defo ...
                        	... • Piezoelectricity is a coupling between a material's mechanical and electrical behaviors. • In the simplest of terms, when a piezoelectric material is squeezed, an electric charge collects on its surface. Conversely, when a piezoelectric material is subjected to a voltage drop, it mechanically defo ...
									Reverse Blocking IGCTs for Current Source
									
... press-pack, as long as double-side cooling is used (see Fig. 3). It is advantageous, however, to utilise two wafers rather than just the one: the division of diode and GCT functions in separate wafers allows an overall reduction of losses. Furthermore, the diode’s static and dynamic losses are about ...
                        	... press-pack, as long as double-side cooling is used (see Fig. 3). It is advantageous, however, to utilise two wafers rather than just the one: the division of diode and GCT functions in separate wafers allows an overall reduction of losses. Furthermore, the diode’s static and dynamic losses are about ...
									microwave solid state devices
									
... A main advantage is their high power capability. These diodes are used in a variety of applications from low power radar systems to alarms. Nevertheless these diodes make excellent microwave generators for many applications. An alternating signal is generated simply by applying a DC supply when a su ...
                        	... A main advantage is their high power capability. These diodes are used in a variety of applications from low power radar systems to alarms. Nevertheless these diodes make excellent microwave generators for many applications. An alternating signal is generated simply by applying a DC supply when a su ...
									Susceptibility of Integrated Circuits to RFI: Analysis of PWM
									
... falling voltage transient occurring at the drain, e.g. in DCM operation. In fact, the falling drain to source voltage can couple capacitively a current into the gate circuit, possibly turning on the normally reverse biased isolation pnjunctions formed by the substrate of the IC and the different cir ...
                        	... falling voltage transient occurring at the drain, e.g. in DCM operation. In fact, the falling drain to source voltage can couple capacitively a current into the gate circuit, possibly turning on the normally reverse biased isolation pnjunctions formed by the substrate of the IC and the different cir ...
									LOW DRIVE 3.3 VOLT VCXO MK3727H Description Features Block
									
... "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or ot ...
                        	... "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or ot ...
									Circuit Note CN-0197
									
... To optimize the performance of the daisy-chain communication under noisy conditions, for example, when experiencing electromagnetic interference, the daisy-chain signals are shielded on an inner layer of the printed circuit board (PCB). Shielding is provided above and below by a VSS supply plane, wh ...
                        	... To optimize the performance of the daisy-chain communication under noisy conditions, for example, when experiencing electromagnetic interference, the daisy-chain signals are shielded on an inner layer of the printed circuit board (PCB). Shielding is provided above and below by a VSS supply plane, wh ...
									FDD5614P 60V P-Channel PowerTrench MOSFET
									
... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
                        	... support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when ...
									EMI4193 数据资料DataSheet下载
									
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
                        	... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
									Phosphorosilica film
									
... wafers. Phosphorous diffused layers may be produced routinely with sheet resistance profiles over the wafer surface flatter than 1-2%. Similar reproducibility from wafer to wafer and from run to run is easily achieved. When applied by spinning or spraying, a film forms which consists of silica with ...
                        	... wafers. Phosphorous diffused layers may be produced routinely with sheet resistance profiles over the wafer surface flatter than 1-2%. Similar reproducibility from wafer to wafer and from run to run is easily achieved. When applied by spinning or spraying, a film forms which consists of silica with ...
									common-base amplifier
									
... Utilize your knowledge of transistor amplifiers and troubleshooting techniques and imagine what the effects would be with various faulty components—for example, open resistors, shorted transistor junctions or capacitors. More importantly, how would the output be affected by these faults? In troubles ...
                        	... Utilize your knowledge of transistor amplifiers and troubleshooting techniques and imagine what the effects would be with various faulty components—for example, open resistors, shorted transistor junctions or capacitors. More importantly, how would the output be affected by these faults? In troubles ...
									Syntheses and Characterization of Materials for Energy Applications
									
... the majority of semiconductors used for photoelectrolysis of water are transition metal oxides. This stability does not equate to all oxide semiconductors being adequate for visible light solar water splitting. Two different problems exist with many transition metal oxides [8]. First, their band gap ...
                        	... the majority of semiconductors used for photoelectrolysis of water are transition metal oxides. This stability does not equate to all oxide semiconductors being adequate for visible light solar water splitting. Two different problems exist with many transition metal oxides [8]. First, their band gap ...
									ClockWorks Fibre Channel, 212.5MHz, Ultra
									
... Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this data sheet. This information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry, specificati ...
                        	... Micrel makes no representations or warranties with respect to the accuracy or completeness of the information furnished in this data sheet. This information is not intended as a warranty and Micrel does not assume responsibility for its use. Micrel reserves the right to change circuitry, specificati ...
									RPR-220PC30N
									
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
                        	... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
									ThePiezoEffect.pdf
									
... squeezed or stretched). Conversely, a mechanical deformation (the substance shrinks or expands) is produced when an electric field is applied. This effect is formed in crystals that have no center of symmetry. To explain this, we have to look at the individual molecules that make up the crystal. Eac ...
                        	... squeezed or stretched). Conversely, a mechanical deformation (the substance shrinks or expands) is produced when an electric field is applied. This effect is formed in crystals that have no center of symmetry. To explain this, we have to look at the individual molecules that make up the crystal. Eac ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.