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Manual(Exp.4) - Manuals for PHYSLAB
Manual(Exp.4) - Manuals for PHYSLAB

... field induced by another current. Let the currents in parallel wires be ia and ib respectively and the distance between them d. The magnitude of magnetic field induced by ia is Ba = μ0ia/(2πd) (1) at the position current ib flows and the direction is downward by the right hand rule. μ0 is the permea ...
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... magnetic  field  which  permeates  space  in  a  manner  similar  to  the  gravitational  field  that  surrounds the Earth. The magnetic field of a bar magnet can be visualized by sprinkling iron filings  around it as shown above on the left side. The ion filings settle into a two‐dimensional patter ...
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... on superposition of two currents. 2. The method of measurement is slightly different for thick samples and thin layers, as well as for high-resistivity and low-resistivity (high conductivity) materials. 3. We can make a circuit model (mesh of identical resistors) of homogeneous resistive layers as w ...
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... thickness is b ρ b R   dR  ln   a 2πL  a  This is the radial resistance of the cable This is fairly high, which is desirable since you want the current to flow along the cable and not radially out of it ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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