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Programmable AC/DC Electronic load MODEL 63800 SERIES
Programmable AC/DC Electronic load MODEL 63800 SERIES

... 2.Crest Factor & Power Factor with real time correction The specification range of CF is 1.414 to 5.0 and PF is 0 to 1 lead or lag (limited by crest factor). The 63800 load controls power factor by shifting the current relative to the input voltage to generate a displacement power factor. If the PF ...
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... appliances with a metal case. If a fault develops in the appliance causing the live wire to touch the case, there is a surge in the current down the earth wire. This causes the fuse to blow. ...
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2013 Test 2 Solutions - Physics@Brock

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Experiment NO.3 Series and parallel connection

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First Oscillators Sheet

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Unit One: AC Electronics - Helderberg Hilltowns Association
Unit One: AC Electronics - Helderberg Hilltowns Association

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ADM483 数据手册DataSheet 下载

... particular time, but multiple receivers can be enabled simultaneously. As with any transmission line, it is important to minimize reflections. This can be done by terminating the extreme ends of the line by using resistors equal to the characteristic impedance of the line. Stub lengths of the main l ...
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... • A TN-C system is uncommon in the United Kingdom. • Neutral and protective functions are combined in a single conductor (a PEN conductor) throughout the system (although, the term CNE is sometimes used for such a conductor forming part of the distributor’s lines). • The exposed-conductive-parts of ...
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FE Review - Basic Circuits

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Transistor Circuits

... This is two transistors connected together so that the current amplified by the first is amplified further by the second transistor. The overall current gain is equal to the two individual gains multiplied together: Darlington pair current gain, hFE = hFE1 × hFE2 (hFE1 and hFE2 are the gains of the ...
MX581
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... VOUT, and GND (GND is tied to the case in the TO-5 package). Usually the desired accuracy is obtained by selecting the appropriate device grade. However, any part can be adjusted to a tighter tolerance, or to slightly different voltage, using the fine trim circuit in Figure 2. The table in Figure 2 ...
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MJD340 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

... which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device ...
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Design and analysis of full adder using different low
Design and analysis of full adder using different low

... and they all concentrated on reducing the area, power dissipation and delay. The transistor count of an adder will largely affect the complexity of many designs like ALU, multiplier and processors. The area and complexity can be reduced by reducing the transistor count. The speed depends on transist ...
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for immediate release

... design engineers using relays and circuit breakers (or relays and fuses) can replace those two devices with a single compact unit, plus get the benefits of emerging “smart” circuit protection technology. The new device saves space, saves time, increases reliability, and provides unprecedented protec ...
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Lecture #3 Review: Power - EECS: www

physics 201 - La Salle University
physics 201 - La Salle University

... 6. Label it as R1. 7. Drag a second resistor onto the workspace, change its value to 3.3 k, and label it R2. 8. Connect the resistors in series. Click at the end of R1 (a dot will appear) and drag a line over to the beginning of R2 (another dot should appear). This is the simulational equivalent of ...
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KSD140 8 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

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Series and Parallel
Series and Parallel

... • Resistors added side-by-side • The more paths, the less TOTAL resistance. 1/ Req=1/R1+1/R2+1/R3 • Ex. 2 resistors in parallel with 4Ω each. • Since the circuit offers two equal pathways for charge flow, only 1/2 the charge will choose to pass through a given branch. ...
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DM74LS123 Dual Retriggerable One

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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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