Download MJD340 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

MJD340
MJD340
High Voltage Power Transistors
D-PAK for Surface Mount Applications
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
D-PAK
1
1.Base
I-PAK
1
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
300
Units
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
300
3
V
V
IC
Collector Current (DC)
0.5
A
ICP
Collector Current (Pulse)
0.75
A
PC
Collector Dissipation (TC=25°C)
15
W
Collector Dissipation (Ta=25°C)
1.56
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
VCEO(sus)
Parameter
* Collector Emitter Sustaining Voltage
Test Condition
IC = 1mA, IB = 0
ICEO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
hFE
* DC Current Gain
VCE = 10V, IC = 50mA
Min.
300
Max.
Units
V
VCB = 300V, IE =0
0.1
mA
VEB = 3V, IC = 0
0.1
mA
30
240
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD340
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 10V
100
10
1
1
10
100
1000
10
IC = 10 IB
V BE(sat)
1
V CE(sat)
0.1
0.01
10
100
IC[A], COLLECTOR CURRENT
1000
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
24
1000
ICP (max)
PC[W], POWER DISSIPATION
10
s
50
0µ
s
100
0µ
1m
s
DC
IC[mA], COLLECTOR CURRENT
21
IC(max)
10
18
15
12
9
6
3
0
1
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 4. Power Derating
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
MJD340
Package Demensions
D-PAK
0.50 ±0.10
MIN0.55
0.91 ±0.10
0.76 ±0.10
0.50 ±0.10
1.02 ±0.20
2.30TYP
[2.30±0.20]
(2XR0.25)
(1.00)
(3.05)
6.10 ±0.20
2.70 ±0.20
9.50 ±0.30
6.60 ±0.20
(5.34)
(5.04)
(1.50)
(0.70)
2.30 ±0.20
(0.90)
6.10 ±0.20
2.30 ±0.10
(0.10)
2.30TYP
[2.30±0.20]
(0.50)
0.89 ±0.10
MAX0.96
(4.34)
2.70 ±0.20
0.80 ±0.20
0.60 ±0.20
(0.50)
9.50 ±0.30
5.34 ±0.30
0.70 ±0.20
6.60 ±0.20
0.76 ±0.10
Dimensions in Millimeters
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©2001 Fairchild Semiconductor Corporation
Rev. A2, June 2001
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FACT™
FACT Quiet Series™
FASTr™
FRFET™
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HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
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QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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As used herein:
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2. A critical component is any component of a life support
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device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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©2001 Fairchild Semiconductor Corporation
Rev. H3