Download KSD140 8 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

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Transcript
KSD1408
KSD1408
Power Amplifier Applications
• Complement to KSB1017
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Value
80
Units
V
80
V
5
V
4
A
IC
Collector Current
IB
Base Current
0.4
A
PC
Collector Dissipation (TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 50mA, IB = 0
Min.
80
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
30
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
100
µA
h FE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A. IB = 0.3A
0.45
1.5
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 3A
1
1.5
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A
8
MHz
Cob
Output Capacitance
VCB = 10V, f = 1MHz
90
pF
40
15
240
50
V
V
hFE1 Classification
Classification
R
O
Y
hFE1
40 ~ 80
70 ~ 140
120 ~ 240
www.BDTIC.com/FAIRCHILD
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1408
Typical Characteristics
1000
IC[A], COLLECTOR CURRENT
I B=
A
A
0m 60mA
0m
20
1
24
I B=
I B=
1
IB=
20m
VCE = 5V
A
IB
3.2
0m
= 10
I B = 80
A
mA
hFE, DC CURRENT GAIN
4.0
IB = 60mA
2.4
IB = 40mA
1.6
IB = 20mA
0.8
IB = 0mA
0.0
0
1
2
3
4
100
10
1
0.001
5
0.01
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
4
10
IC = 10 IB
VCE = 5V
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
0.1
1
0.1
0.01
0.001
0.01
0.1
1
3
2
1
0
0.0
10
0.4
IC[A], COLLECTOR CURRENT
0.8
1.2
1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
35
100
PC[W], POWER DISSIPATION
ICmax(pulse)
10
S
1m
s
0m
IC(max)
m
10
10
S
DC
1S
1
VCEOMAX
IC[A], COLLECTOR CURRENT
30
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
20
15
10
5
0
0.1
1
25
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
www.BDTIC.com/FAIRCHILD
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1408
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
www.BDTIC.com/FAIRCHILD
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
www.BDTIC.com/FAIRCHILD
©2000 Fairchild Semiconductor International
Rev. E