Download KSD140 8 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings

KSD1408
KSD1408
Power Amplifier Applications
• Complement to KSB1017
TO-220F
1
1.Base
2.Collector
3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Value
80
Units
V
80
V
5
V
4
A
IC
Collector Current
IB
Base Current
0.4
A
PC
Collector Dissipation (TC=25°C)
25
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 50mA, IB = 0
Min.
80
Typ.
Max.
Units
V
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
30
µA
IEBO
Emitter Cut-off Current
VEB = 5V, IC = 0
100
µA
h FE1
hFE2
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A. IB = 0.3A
0.45
1.5
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 3A
1
1.5
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.5A
8
MHz
Cob
Output Capacitance
VCB = 10V, f = 1MHz
90
pF
40
15
240
50
V
V
hFE1 Classification
Classification
R
O
Y
hFE1
40 ~ 80
70 ~ 140
120 ~ 240
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1408
Typical Characteristics
1000
IC[A], COLLECTOR CURRENT
I B=
A
A
0m 60mA
0m
20
1
24
I B=
I B=
1
IB=
20m
VCE = 5V
A
IB
3.2
0m
= 10
I B = 80
A
mA
hFE, DC CURRENT GAIN
4.0
IB = 60mA
2.4
IB = 40mA
1.6
IB = 20mA
0.8
IB = 0mA
0.0
0
1
2
3
4
100
10
1
0.001
5
0.01
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
10
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
4
10
IC = 10 IB
VCE = 5V
IC[A], COLLECTOR CURRENT
VCE(sat)[V], SATURATION VOLTAGE
0.1
1
0.1
0.01
0.001
0.01
0.1
1
3
2
1
0
0.0
10
0.4
IC[A], COLLECTOR CURRENT
0.8
1.2
1.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
35
100
PC[W], POWER DISSIPATION
ICmax(pulse)
10
S
1m
s
0m
IC(max)
m
10
10
S
DC
1S
1
VCEOMAX
IC[A], COLLECTOR CURRENT
30
10
100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
20
15
10
5
0
0.1
1
25
1000
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 6. Power Derating
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD1408
Package Demensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
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First Production
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©2000 Fairchild Semiconductor International
Rev. E