Harmonic detection and filtering : pdf
... A typical crest factor for the current drawn by non-linear loads is much greater than 2. Its value can range from 1.5 to 2 or even up to 5 in critical situations. A very high crest factor indicates that high overcurrents occur from time to time. These overcurrents, detected by the protection devices ...
... A typical crest factor for the current drawn by non-linear loads is much greater than 2. Its value can range from 1.5 to 2 or even up to 5 in critical situations. A very high crest factor indicates that high overcurrents occur from time to time. These overcurrents, detected by the protection devices ...
IQS17 / IQS117 Family IQ Switch - ProxSense™ Series
... as well as domestic appliances. The integrated design minimises external components while taking care of a number of essential and comfort features. The IC is a stand-alone device, capable of controlling a triac or transistor to power the load. The device can be powered from high voltages using mini ...
... as well as domestic appliances. The integrated design minimises external components while taking care of a number of essential and comfort features. The IC is a stand-alone device, capable of controlling a triac or transistor to power the load. The device can be powered from high voltages using mini ...
"Class-A2" ultra-low-loss magnetic ballast for T5 fluorescent lamps
... used [9], [10]. As the voltage vector of the capacitor is opposite to that of an inductor, the voltage drop across the inductor can be partially or totally cancelled by the voltage vector of the capacitor. Thus, the requirement 3) can be met with an LC ballast. Since only an inductor and a nonelectr ...
... used [9], [10]. As the voltage vector of the capacitor is opposite to that of an inductor, the voltage drop across the inductor can be partially or totally cancelled by the voltage vector of the capacitor. Thus, the requirement 3) can be met with an LC ballast. Since only an inductor and a nonelectr ...
THS1041 数据资料 dataSheet 下载
... references to match the user’s design requirements. For more design flexibility, the internal reference can be bypassed to use an external reference to suit the dc accuracy and temperature drift requirements of the application. The out-of-range output indicates any out-of-range condition in THS1041’ ...
... references to match the user’s design requirements. For more design flexibility, the internal reference can be bypassed to use an external reference to suit the dc accuracy and temperature drift requirements of the application. The out-of-range output indicates any out-of-range condition in THS1041’ ...
Lecture 4: Transformers
... common ferromagnetic core. These coils are usually not connected electrically together. However, they are connected through the common magnetic flux confined to the core. Assuming that the transformer has at least two windings, one of them (primary) is connected to a source of AC power; the other (s ...
... common ferromagnetic core. These coils are usually not connected electrically together. However, they are connected through the common magnetic flux confined to the core. Assuming that the transformer has at least two windings, one of them (primary) is connected to a source of AC power; the other (s ...
ADL5801 数据手册DataSheet 下载
... The ADL5801 includes a double-balanced active mixer with a 50 Ω input impedance and 250 Ω output impedance. In addition, the ADL5801 integrates a local oscillator (LO) amplifier and an RF power detector that can be used to optimize the mixer dynamic range. The RF and LO are differential, providing m ...
... The ADL5801 includes a double-balanced active mixer with a 50 Ω input impedance and 250 Ω output impedance. In addition, the ADL5801 integrates a local oscillator (LO) amplifier and an RF power detector that can be used to optimize the mixer dynamic range. The RF and LO are differential, providing m ...
1 - DCC
... Each high voltage channel of the LV ESD Driver (bias, UR, LR, UL, and LL) must operate reliably without high voltage breakdown up to the operating limit of the high voltage power amplifier driving each of these channels (430V). The circuit components used in the LV ESD Driver are rated for continuou ...
... Each high voltage channel of the LV ESD Driver (bias, UR, LR, UL, and LL) must operate reliably without high voltage breakdown up to the operating limit of the high voltage power amplifier driving each of these channels (430V). The circuit components used in the LV ESD Driver are rated for continuou ...
DC Circuits–Series, Parallel, and Combination Circuits
... Add 60-V batteries to circuit (a)–(d) in the gaps provided. The quickest way to create a 60V battery is to adjust the selector under the battery in the Toolbox to sixty and then drag a battery to each of the circuits. Remember, the selectors in the Toolbox set the values for any resistor or battery ...
... Add 60-V batteries to circuit (a)–(d) in the gaps provided. The quickest way to create a 60V battery is to adjust the selector under the battery in the Toolbox to sixty and then drag a battery to each of the circuits. Remember, the selectors in the Toolbox set the values for any resistor or battery ...
A Typical DC Voltage Calibration Sequence
... It may be passive, where it is simply a conductive screen or case around sensitive components and circuits, or active where amplifiers actively sense and control the screen potential. When line powered instruments are connected together, circulating leakage currents may flow around the "loop" formed ...
... It may be passive, where it is simply a conductive screen or case around sensitive components and circuits, or active where amplifiers actively sense and control the screen potential. When line powered instruments are connected together, circulating leakage currents may flow around the "loop" formed ...
L2_sensor_ec
... integrated luminosity of 4 fb-1 due to radiation damage and low signal to noise ratio. It is for these reasons that the collaboration has designed a new silicon tracker [1]. The silicon tracking system will be a six layer device, divided into two radial groups. The inner two layers, covering a radiu ...
... integrated luminosity of 4 fb-1 due to radiation damage and low signal to noise ratio. It is for these reasons that the collaboration has designed a new silicon tracker [1]. The silicon tracking system will be a six layer device, divided into two radial groups. The inner two layers, covering a radiu ...
1771-2.69, Allen-Bradley Wire Fault 15
... You program the wire fault module similar to standard discrete I/O modules with the following exceptions. (Block transfer is not used.) Contact/Line Status — Your module constantly monitors contact and wire status. Your ladder program selects which status is reads. We recommend that you toggle the r ...
... You program the wire fault module similar to standard discrete I/O modules with the following exceptions. (Block transfer is not used.) Contact/Line Status — Your module constantly monitors contact and wire status. Your ladder program selects which status is reads. We recommend that you toggle the r ...
PQM-700 Operating manual
... Before you proceed to operate the analyzer, acquaint yourself thoroughly with the present manual and observe the safety regulations and specifications provided by the manufacturer. Any application that differs from those specified in the present manual may result in a damage to the device and consti ...
... Before you proceed to operate the analyzer, acquaint yourself thoroughly with the present manual and observe the safety regulations and specifications provided by the manufacturer. Any application that differs from those specified in the present manual may result in a damage to the device and consti ...
improvement of power quality of cfl bulbs using active power factor
... Power electronic converters use semi-conductor switching devices that are operated in ON-OFF states. These converters have higher efficiency with the control of distorted input signals. The input signal distortion increases with the increased use of these converters. Various standards have been set ...
... Power electronic converters use semi-conductor switching devices that are operated in ON-OFF states. These converters have higher efficiency with the control of distorted input signals. The input signal distortion increases with the increased use of these converters. Various standards have been set ...
74CBTLVD3244 1. General description 8-bit level-shifting bus switch with 4-bit output enables
... disabled when the associated nOE input is HIGH. Schmitt trigger action at control inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging back ...
... disabled when the associated nOE input is HIGH. Schmitt trigger action at control inputs makes the circuit tolerant of slower input rise and fall times. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging back ...
AN3172
... Once the voltage exceeds the reference by 50 mV, the controller restarts switching. Burstmode operation load threshold can be programmed by properly choosing the resistor connecting the optocoupler to the RFMIN pin (R34). On this board the controller operates in burst-mode if the load falls below ~1 ...
... Once the voltage exceeds the reference by 50 mV, the controller restarts switching. Burstmode operation load threshold can be programmed by properly choosing the resistor connecting the optocoupler to the RFMIN pin (R34). On this board the controller operates in burst-mode if the load falls below ~1 ...
AD637 数据手册DataSheet 下载
... users. The logarithm of the rms output signal is brought out to a separate pin, allowing direct dB measurement with a useful range of 60 dB. An externally programmed reference current allows the user to select the 0 dB reference voltage to correspond to any level between 0.1 V and 2.0 V rms. A chip ...
... users. The logarithm of the rms output signal is brought out to a separate pin, allowing direct dB measurement with a useful range of 60 dB. An externally programmed reference current allows the user to select the 0 dB reference voltage to correspond to any level between 0.1 V and 2.0 V rms. A chip ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.