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Chapter 23 Text
Chapter 23 Text

DeltaV SIS Conditioning Components
DeltaV SIS Conditioning Components

Chapter 5 Using Sources and Stimuli
Chapter 5 Using Sources and Stimuli

EUP9261  LI-ION/POLYMER ONE CELL PROTECTOR
EUP9261 LI-ION/POLYMER ONE CELL PROTECTOR

... If an FET with a threshold voltage equal to or higher than the overdischarge detection voltage is used, discharging may be stoped before overdischarge is detected. *2 If the withstand voltage between the gate and source is lower than the charger voltage, the FET may destroy. *3 If R1 has a high resi ...
LT5554
LT5554

... All dBm figures are with respect to 50Ω. Specifications refer to differential inputs and differential outputs. Note 4: An external power supply equal to VCCO is used for choke inductors or center-tap transformer output interfaces. Whenever OUT+, OUT– pins are biased via resistors, the voltage drop pro ...
2300 Exam 1 Spring 2003
2300 Exam 1 Spring 2003

AD7440 数据手册DataSheet下载
AD7440 数据手册DataSheet下载

... The AD7440/AD7450A are 10-bit and 12-bit high speed, low power, successive approximation (SAR) analog-to-digital converters with a fully differential analog input. These parts operate from a single 3 V or 5 V power supply and use advanced design techniques to achieve very low power dissipation at th ...
Unit: 1 – Binary Systems and Logic Circuits
Unit: 1 – Binary Systems and Logic Circuits

... Binary numbers are too long. These numbers are fine for machines butt are too lengthy to be handled by human beings. So, there is a need to represent the binary numbers concisely. One number system developed with this objective is the hexadecimal number system (or Hex). Although it is somewhat diffi ...
128 bit carry select adder using binary to excess-one
128 bit carry select adder using binary to excess-one

MONITOR AND CONTROL STRATEGIES TO REDUCE THE IMPACT OF PROCESS
MONITOR AND CONTROL STRATEGIES TO REDUCE THE IMPACT OF PROCESS

... GENERAL DISCUSSION ...
MAX9910–MAX9913 200kHz, 4µA, Rail-to-Rail I/O Op Amps with Shutdown General Description
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... applications. These CMOS devices consume an ultralow 4µA (typ) supply current and a 200µV (typ) offset voltage. For additional power conservation, the MAX9911/MAX9913 feature a low-power shutdown mode that reduces supply current to 1nA (typ), and puts the amplifiers’ output in a high-impedance state ...
CT26657663
CT26657663

PTN3360D 1. General description Enhanced performance HDMI/DVI level shifter with active DDC
PTN3360D 1. General description Enhanced performance HDMI/DVI level shifter with active DDC

... deep color mode, 4K  2K video format or 3D video data transport. Each of these lanes provides a level-shifting differential buffer to translate from low-swing AC-coupled differential signaling on the source side, to TMDS-type DC-coupled differential current-mode signaling terminated into 50  to 3. ...
Old Company Name in Catalogs and Other Documents
Old Company Name in Catalogs and Other Documents

... laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of ...
What is an Op-Amp? - benchmark
What is an Op-Amp? - benchmark

... the manufacturer’s specifications. Note that the military grade version (741) has a wider temperature range than the commercial, or hobbyist, grade version (741C). Output Short-Circuit Duration This is the amount of time that the op-amp’s output can be short-circuited to ground or either supply volt ...
DS1339B Low-Current, I C, Serial Real-Time Clock For High-ESR Crystals
DS1339B Low-Current, I C, Serial Real-Time Clock For High-ESR Crystals

... feature. Diodes should not be placed in series between the backup source and the VBACKUP input, or improper operation will result. If a backup supply is not required, VBACKUP must be grounded. UL recognized to ensure against reverse charging current when used with a primary lithium cell. For more in ...
Ohm`s Law III -- Resistors in Series and Parallel
Ohm`s Law III -- Resistors in Series and Parallel

... fuse and should withstand the maximum current available from the power supply. The prototype circuit board has an array of banana jacks conveniently laid out in a manner to wire and to help expedite the construction of the circuits to be studied. The array is constructed such that a minimum number o ...
DS1339A Low-Current, I C, Serial Real-Time Clock 2
DS1339A Low-Current, I C, Serial Real-Time Clock 2

... feature. Diodes should not be placed in series between the backup source and the VBACKUP input, or improper operation will result. If a backup supply is not required, VBACKUP must be grounded. UL recognized to ensure against reverse charging current when used with a primary lithium cell. For more in ...
Chapter 06 Parallel Circuits
Chapter 06 Parallel Circuits

164_56809_Lecture notes on feedback amplifiers
164_56809_Lecture notes on feedback amplifiers

... Another benefit of negative feedback, seen clearly in the common-collector circuit, is that it tends to make the voltage gain of the amplifier less dependent on the characteristics of the transistor. Note that in a common-collector amplifier, voltage gain is nearly equal to unity (1), regardless of ...
Direct-Current Circuits
Direct-Current Circuits

Single D-Type Flip-Flop With 3-State Output
Single D-Type Flip-Flop With 3-State Output

Kinetis KL25: 48MHz Cortex-M0+ 32-128KB Flash 32-80 pin
Kinetis KL25: 48MHz Cortex-M0+ 32-128KB Flash 32-80 pin

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AD9865

... power saving modes, and high Tx-to-Rx isolation make it well suited for half- and full-duplex applications. The digital interface is extremely flexible allowing simple interfaces to digital back ends that support half- or full-duplex data transfers, thus often allowing the AD9865 to replace discrete ...
wt300 series digital power meter
wt300 series digital power meter

... The solution enables testing to be performed according to the IEC62301 Ed1.0 and Ed2.0 standards which specify the use of special algorithms for determining the power stability in the device under test. The software thus gathers all the required measurement data from the WT310, which includes not on ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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