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DC power supply Operating for Rotor Winding Resistance
DC power supply Operating for Rotor Winding Resistance

High-/Low-Side Measurement, Bidirectional CURRENT/POWER
High-/Low-Side Measurement, Bidirectional CURRENT/POWER

... The INA231 is typically powered by a separate supply that can range from 2.7 V to 5.5 V. The bus that is being monitored can range in voltage from 0 V to 28 V. NOTE Based on the fixed 1.25 mV LSB for the bus voltage register, a full-scale register would result in a 40.96-V value. However, the actual ...
LTC6601-2 - Low Power, Low Distortion, Low Power, Low Distortion, 5MHz to 27MHz, Pin Configurable Filter/ADC Driver
LTC6601-2 - Low Power, Low Distortion, Low Power, Low Distortion, 5MHz to 27MHz, Pin Configurable Filter/ADC Driver

... Note 11: Output swings are measured as differences between the output and the respective power supply rail. Note 12: Extended operation with the output shorted may cause junction temperatures to exceed the 150°C limit and is not recommended. Note 13: Floating the BIAS pin will reliably place the par ...
THS4509-Q1
THS4509-Q1

... To allow for dc coupling to analog-to-digital converters (ADCs), its unique output common-mode control circuit maintains the output common-mode voltage within 3-mV offset (typ) from the set voltage, when set within 0.5 V of mid-supply, with less than 4-mV differential offset voltage. The common-mode ...
Thevenin and Norton`s Theorem w/ Dep. Sources
Thevenin and Norton`s Theorem w/ Dep. Sources

O? Control v|_
O? Control v|_

74ALVT162823 1. General description 18-bit bus-interface D-type flip-flop with reset and enable with
74ALVT162823 1. General description 18-bit bus-interface D-type flip-flop with reset and enable with

... master reset (nMR) which are ideal for parity bus interfacing in high microprogrammed systems. The registers are fully edge-triggered. The state of each D input, one set-up time before the LOW-to-HIGH clock transition is transferred to the corresponding Q output of the flip-flop. The 74ALVT162823 is ...
UBA20261/2 600 V and 350 V power IC for step dimmable CFLs
UBA20261/2 600 V and 350 V power IC for step dimmable CFLs

... state, the frequency sweeps down on the CI pin due to capacitor CCI charging at a fixed current as shown in Figure 4. During this continuous decrease in frequency, the circuit approaches the resonant frequency of the resonant tank (L2, C5). This action causes a high voltage across the lamp to ignite ...
18-Bit - Multi-Channel Delta-Sigma Analog-to
18-Bit - Multi-Channel Delta-Sigma Analog-to

Kinetis KV10: 75MHz Cortex-M0+ 32/16KB Flash 32-48pin
Kinetis KV10: 75MHz Cortex-M0+ 32/16KB Flash 32-48pin

Conductance Curve Design
Conductance Curve Design

... explicitly for use with the fundamental equations because of the additional data available with the G-Curve technique. In most treatments of vacuum tube fundamentals, the circuit equations are developed and the concept of small-signal parameters, although well explained, are not used as a basis for ...
The American University in Cairo  School of Science and Engineering
The American University in Cairo School of Science and Engineering

... Supervisors: Dr. Ali Darwish and Dr. Mohamed Abdelmoneum One of the most important building blocks in analog circuit design is the operational amplifiers. This is because of their versatility and wide spread usage in many applications such as communications transmitters and receivers, analog to digi ...
FRN 0.75 E 1 S
FRN 0.75 E 1 S

... Rated capacity is calculated by assuming the output rated voltage as 220V for three-phase 200V series and 440V for three-phase 400V series. Output voltage cannot exceed the power supply voltage. When setting the carrier frequency (F26) to 3 kHz or less. Use the current ( ) or below when the carrier ...
AD7798-99 - Analog Devices
AD7798-99 - Analog Devices

... Temperature range is –40°C to +105°C. At the 19.6 Hz and 39.2 Hz update rates, the INL, power supply rejection (PSR), common-mode rejection (CMR), and normal mode rejection (NMR) do not meet the data sheet specification if the voltage on the AIN(+) or AIN(−) pins exceeds AVDD − 1.6 V typically. When ...
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LOW VOLTAGE TEMPERATURE SENSOR DESIGN FOR ON-CHIP THERMAL MANAGEMENT by

... As the integration density and power density of modern very-large-scaleintegrated (VLSI) circuits keep increasing, on-chip overheating issue is causing performance degrading and even function failures. Thermal management system is therefore integrated on-chip, where a temperature sensor is the most ...
LT3651-4.1, 4.2 - Linear Technology
LT3651-4.1, 4.2 - Linear Technology

... This pin indicates the battery charging status. Typically a resistor pull-up is used on this pin. This status pin can be pulled up to voltages as high as VIN when disabled, and can sink currents up to 10mA when enabled. CHRG is pulled low during a battery charging cycle. When the charge cycle is ter ...
SN74LVC1G175-EP 数据资料 dataSheet 下载
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... Additional temperature ranges available - contact factory ...
User Manual Power Quality Network Analyser Model PQI
User Manual Power Quality Network Analyser Model PQI

... Please note that these operating instructions may not always contain the latest information concerning the device. If, for example, you have changed the firmware of the device to a higher version via the Internet, this description will no longer be completely accurate. In this case, contact us direc ...
Relay symbols and device numbers
Relay symbols and device numbers

PTN3381D - NXP Semiconductors
PTN3381D - NXP Semiconductors

... The PTN3381D level shifts four lanes of low-swing AC-coupled differential input signals to DVI and HDMI compliant open-drain current-steering differential output signals, up to 3 Gbit/s per lane to support 36-bit deep color, 3D and 3 Gbit/s modes. It has integrated 50  termination resistors for AC- ...
AC electrical theory
AC electrical theory

... 48. Controlling loaded Q.............................142 ...
Power Monitor - Cypress Semiconductor
Power Monitor - Cypress Semiconductor

Principles of Shunt Capacitor Bank Application and Protection
Principles of Shunt Capacitor Bank Application and Protection

basics of electrical circuits laboratory
basics of electrical circuits laboratory

A 23--24 GHz Low Power Frequency Synthesizer in 0.25
A 23--24 GHz Low Power Frequency Synthesizer in 0.25

... silicon area of such dividers is large, due to integrated inductors, and therefore their cost is high. Another way is to use Injection Locked Frequency Dividers or regenerative dividers. However, most of these dividers also use integrated inductors and do not allow dualmodulus division. Furthermore ...
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CMOS



Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.
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