DC Generator Characteristics
... (ii) Internal and External Characteristics The external characteristic of a separately excited generator is the curve between the terminal voltage (V) and the load current IL (which is the same as armature current in this case). In order to determine the external characteristic, the circuit set up i ...
... (ii) Internal and External Characteristics The external characteristic of a separately excited generator is the curve between the terminal voltage (V) and the load current IL (which is the same as armature current in this case). In order to determine the external characteristic, the circuit set up i ...
ADF4360-9 Clock Generator PLL with Integrated VCO (Rev. C)
... Charge Pump Ground. This is the ground return path for the charge pump. Analog Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should be placed as close as possible to this pin. AVDD must have the same value as DVDD. Analog Ground. This is the ground r ...
... Charge Pump Ground. This is the ground return path for the charge pump. Analog Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should be placed as close as possible to this pin. AVDD must have the same value as DVDD. Analog Ground. This is the ground r ...
LM137QML 3-Terminal Adjustable Negative
... which the device is functional, but do not guarantee specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is ...
... which the device is functional, but do not guarantee specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is ...
PCA9508 Hot swappable level translating I2C
... be pulled to the VOL of the slave device, which is very close to ground in this example. At the end of the acknowledge, the level rises only to the LOW level set by the driver in the PCA9508 for a short delay while the A bus side rises above 0.5VCC(A) then it continues HIGH. It is important to note ...
... be pulled to the VOL of the slave device, which is very close to ground in this example. At the end of the acknowledge, the level rises only to the LOW level set by the driver in the PCA9508 for a short delay while the A bus side rises above 0.5VCC(A) then it continues HIGH. It is important to note ...
TPS62260-Q1 数据资料 dataSheet 下载
... The TPS6226x devices are high-efficiency synchronous step-down dc-dc converters optimized for battery powered applications. It provides up to 600-mA output current from a single Li-Ion cell and is ideal to power mobile phones and other portable applications. With an wide input voltage range of 2 V t ...
... The TPS6226x devices are high-efficiency synchronous step-down dc-dc converters optimized for battery powered applications. It provides up to 600-mA output current from a single Li-Ion cell and is ideal to power mobile phones and other portable applications. With an wide input voltage range of 2 V t ...
Electrical Circuits
... Apprentices be given two resistors, 100R and 150R 1. Use the resistor colour code to check each resistor and note their values. 2. Use a multimeter to measure the value of each resistor and check against coded value and tolerance. 3. Refer to Figure 3 and calculate the total circuit resistance. 4. C ...
... Apprentices be given two resistors, 100R and 150R 1. Use the resistor colour code to check each resistor and note their values. 2. Use a multimeter to measure the value of each resistor and check against coded value and tolerance. 3. Refer to Figure 3 and calculate the total circuit resistance. 4. C ...
ADF4360-9 - Analog Devices
... Charge Pump Ground. This is the ground return path for the charge pump. Analog Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should be placed as close as possible to this pin. AVDD must have the same value as DVDD. Analog Ground. This is the ground r ...
... Charge Pump Ground. This is the ground return path for the charge pump. Analog Power Supply. This ranges from 3.0 V to 3.6 V. Decoupling capacitors to the analog ground plane should be placed as close as possible to this pin. AVDD must have the same value as DVDD. Analog Ground. This is the ground r ...
AD5235 数据手册DataSheet下载
... The AD5235 is a dual-channel, nonvolatile memory,1 digitally controlled potentiometer2 with 1024-step resolution. The device performs the same electronic adjustment function as a mechanical potentiometer with enhanced resolution, solid state reliability, and superior low temperature coefficient perf ...
... The AD5235 is a dual-channel, nonvolatile memory,1 digitally controlled potentiometer2 with 1024-step resolution. The device performs the same electronic adjustment function as a mechanical potentiometer with enhanced resolution, solid state reliability, and superior low temperature coefficient perf ...
Capacitors - La Favre home page
... when using electrolytic capacitors in your circuits. Remember, these capacitors are marked. Aluminum capacitors have the negative side marked and tantalum have the positive side marked. Question for you, do film type capacitors have a polarity requirement? YES NO The schematic to the right is the vo ...
... when using electrolytic capacitors in your circuits. Remember, these capacitors are marked. Aluminum capacitors have the negative side marked and tantalum have the positive side marked. Question for you, do film type capacitors have a polarity requirement? YES NO The schematic to the right is the vo ...
AD5379 英文产品数据手册下载
... The AD5379 offers guaranteed operation over a wide VSS/VDD supply range from ±11.4 V to ±16.5 V. The output amplifier headroom requirement is 2.5 V operating with a load current of 1.5 mA, and 2 V operating with a load current of 0.5 mA. The AD5379 contains a double-buffered parallel interface in wh ...
... The AD5379 offers guaranteed operation over a wide VSS/VDD supply range from ±11.4 V to ±16.5 V. The output amplifier headroom requirement is 2.5 V operating with a load current of 1.5 mA, and 2 V operating with a load current of 0.5 mA. The AD5379 contains a double-buffered parallel interface in wh ...
450 MHz to 6000 MHz Crest Factor Detector ADL5502
... Envelope Peak Output. Voltage output for peak-hold function, with limited current drive capability. The output has an internal 100 Ω series resistance. Low capacitance loads are recommended to allow for envelope tracking and fast response time. RMS Output Pin. Rail-to-rail voltage output with limite ...
... Envelope Peak Output. Voltage output for peak-hold function, with limited current drive capability. The output has an internal 100 Ω series resistance. Low capacitance loads are recommended to allow for envelope tracking and fast response time. RMS Output Pin. Rail-to-rail voltage output with limite ...
MAX791 Microprocessor Supervisory Circuit General Description Features
... high, and sets the Set Watchdog-Timeout (SWT) input to VOUT - 0.6V, if it is not already connected to VOUT (for internal timeouts). It also disables the chip-enable function, setting the Chip-Enable Output (CE OUT) to a high state. The RESET output remains active as long as MR is held low, and the r ...
... high, and sets the Set Watchdog-Timeout (SWT) input to VOUT - 0.6V, if it is not already connected to VOUT (for internal timeouts). It also disables the chip-enable function, setting the Chip-Enable Output (CE OUT) to a high state. The RESET output remains active as long as MR is held low, and the r ...
TMC6130 Datasheet
... controlled. The device comprises a current shunt amplifier with a high gain bandwidth (GBW), offering a fast settling time with low noise. A combination of bootstrap and charge pump enables driving 6 (or 3) NFETs, with gate charges up to 400nC/NFET with a minimum of device self-heating. Further, the ...
... controlled. The device comprises a current shunt amplifier with a high gain bandwidth (GBW), offering a fast settling time with low noise. A combination of bootstrap and charge pump enables driving 6 (or 3) NFETs, with gate charges up to 400nC/NFET with a minimum of device self-heating. Further, the ...
AD5259 数据手册DataSheet下载
... Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. N ...
... Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. N ...
LMH3401 7-GHz, Ultra-Wideband, Fixed-Gain
... performance over the usable bandwidth of 2 GHz. This performance makes the LMH3401 ideal for applications such as test and measurement, broadband communications, and high-speed data acquisition. A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC inpu ...
... performance over the usable bandwidth of 2 GHz. This performance makes the LMH3401 ideal for applications such as test and measurement, broadband communications, and high-speed data acquisition. A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC inpu ...
SN74LVC1G3208-Q1 数据资料 dataSheet 下载
... and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s te ...
... and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are sold subject to TI’s te ...
MC33290
... data rate is set by the fall time and the rise time. The fall time is set by the output driver. The rise time is set by the bus capacitance and the pull-up resistors on the bus. The fall time of the 33290 allows data rates up to 150 kbps using a 30 percent maximum bit time transition value. The seri ...
... data rate is set by the fall time and the rise time. The fall time is set by the output driver. The rise time is set by the bus capacitance and the pull-up resistors on the bus. The fall time of the 33290 allows data rates up to 150 kbps using a 30 percent maximum bit time transition value. The seri ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.