
TPA2013D1 数据资料 dataSheet 下载
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operations of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to abso ...
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operations of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to abso ...
Gate Oxide Breakdown
... in Figure 16. Also when VG < 0 two bipolar transistors are added to the model in Figure 16. to account for electrons that are injected from the gate diffusing through the substrate, and finally collecting at the source or the drain [19]. Regarding the magnitude of the current after HBD, [20] shows tha ...
... in Figure 16. Also when VG < 0 two bipolar transistors are added to the model in Figure 16. to account for electrons that are injected from the gate diffusing through the substrate, and finally collecting at the source or the drain [19]. Regarding the magnitude of the current after HBD, [20] shows tha ...
OKY-T/3,T/5-D12 Series
... the ramping input voltage crosses the Start-Up Threshold and the fully loaded regulated output voltage enters and remains within its specified accuracy band. Actual measured times will vary with input source impedance, external input capacitance, input voltage slew rate and final value of the input vo ...
... the ramping input voltage crosses the Start-Up Threshold and the fully loaded regulated output voltage enters and remains within its specified accuracy band. Actual measured times will vary with input source impedance, external input capacitance, input voltage slew rate and final value of the input vo ...
Vias and Capacitors
... Recall that in the GaAs package, the silicon chip carrier contained integrated capacitors between VTT and VDDO ...
... Recall that in the GaAs package, the silicon chip carrier contained integrated capacitors between VTT and VDDO ...
Non-alloyed Ohmic contact
... D.A.J.Moran, "Self-aligned 0.12um T-gate InGaAs/InAlAs HEMT technology utilising a non-annealed ohmic contact strategy" ESSDR 2003 Jung-Woo Oh “Application of nonalloyed PdGe ohmic contact to selfaligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility ...
... D.A.J.Moran, "Self-aligned 0.12um T-gate InGaAs/InAlAs HEMT technology utilising a non-annealed ohmic contact strategy" ESSDR 2003 Jung-Woo Oh “Application of nonalloyed PdGe ohmic contact to selfaligned gate AlGaAs/InGaAs pseudomorphic high-electron-mobility ...
Data Sheet - Avago Technologies
... output power limit of -16.0 dBm (for driver current of 60 mA) over the entire temperature range. Figure 10 shows the normalized typical output power. When the transmitter will be driven with 43 mA the optical output power is about 0.70 or -1.55 dB lower than at 60 mA. With an assumed fiber attenuati ...
... output power limit of -16.0 dBm (for driver current of 60 mA) over the entire temperature range. Figure 10 shows the normalized typical output power. When the transmitter will be driven with 43 mA the optical output power is about 0.70 or -1.55 dB lower than at 60 mA. With an assumed fiber attenuati ...
3 3 0 R 1/8 DIN PROCESS MONITOR and
... Loop Power #2 Module) Output + Analog (Retransmission or Loop Power #2 Module) Output Loop Power or Excitation Output + Loop Power or Excitation Output RS-485 Communications + RS-485 Communications Digital Input + Digital Input - ...
... Loop Power #2 Module) Output + Analog (Retransmission or Loop Power #2 Module) Output Loop Power or Excitation Output + Loop Power or Excitation Output RS-485 Communications + RS-485 Communications Digital Input + Digital Input - ...
MAX6946/MAX6947 10-Port, Constant-Current LED Driver and I/O Expander with PWM Intensity Control
... 10-Port, Constant-Current LED Driver and I/O Expander with PWM Intensity Control The MAX6946/MAX6947 general-purpose input/output (GPIO) peripherals provide 10 I/O ports, P0 to P9, controlled through an I2C-compatible serial interface. Use the 10 I/O ports as logic inputs, open-drain logic outputs, ...
... 10-Port, Constant-Current LED Driver and I/O Expander with PWM Intensity Control The MAX6946/MAX6947 general-purpose input/output (GPIO) peripherals provide 10 I/O ports, P0 to P9, controlled through an I2C-compatible serial interface. Use the 10 I/O ports as logic inputs, open-drain logic outputs, ...
U sing and Understanding MINIATURE NEON LAMPS
... This may be caused by collisions between atomic particles, the application of a voltage, a n electrostatic field, X rays, ultraviolet rays, cosmic rays, and radioactivity. Corona-The visible glow of an ionized gas surrounding the cathode. Breakdown Voltage-Also called ionization voltage, striking v ...
... This may be caused by collisions between atomic particles, the application of a voltage, a n electrostatic field, X rays, ultraviolet rays, cosmic rays, and radioactivity. Corona-The visible glow of an ionized gas surrounding the cathode. Breakdown Voltage-Also called ionization voltage, striking v ...
DAC8820 数据资料 dataSheet 下载
... use of an external I/V converter op amp. The R-2R ladder is connected to an external reference input (VREF) that determines the DAC full-scale current. The R-2R ladder presents a code independent load impedance to the external reference of 6 kΩ ±25%. The external reference voltage can vary in a rang ...
... use of an external I/V converter op amp. The R-2R ladder is connected to an external reference input (VREF) that determines the DAC full-scale current. The R-2R ladder presents a code independent load impedance to the external reference of 6 kΩ ±25%. The external reference voltage can vary in a rang ...
AVTRON ACCel500 COMMON BUS INVERTERS
... • Storage temperature –40 to +70°C • Relative humidity<95%, no condensation If the inverter is stored for over 12 months, contact service before connecting the inverter to the power supply. ...
... • Storage temperature –40 to +70°C • Relative humidity<95%, no condensation If the inverter is stored for over 12 months, contact service before connecting the inverter to the power supply. ...
MAX12559 Dual, 96Msps, 14-Bit, IF/Baseband ADC General Description Features
... The MAX12559 is a dual, 3.3V, 14-bit analog-to-digital converter (ADC) featuring fully differential wideband track-and-hold (T/H) inputs, driving internal quantizers. The MAX12559 is optimized for low power, small size, and high dynamic performance in intermediate frequency (IF) and baseband samplin ...
... The MAX12559 is a dual, 3.3V, 14-bit analog-to-digital converter (ADC) featuring fully differential wideband track-and-hold (T/H) inputs, driving internal quantizers. The MAX12559 is optimized for low power, small size, and high dynamic performance in intermediate frequency (IF) and baseband samplin ...
Filterless, High Efficiency, Mono 3 W Class-D Audio Amplifier SSM2375
... The device also includes pop-and-click suppression circuitry. This suppression circuitry minimizes voltage glitches at the output during turn-on and turn-off, reducing audible noise on activation and deactivation. ...
... The device also includes pop-and-click suppression circuitry. This suppression circuitry minimizes voltage glitches at the output during turn-on and turn-off, reducing audible noise on activation and deactivation. ...
Building a Stable DAC External Reference Circuit
... Building a Stable DAC External Reference Circuit Joselito Parguian ...
... Building a Stable DAC External Reference Circuit Joselito Parguian ...
2007
... low-level image processing in a variety of computationally intensive vision applications. These applications include optical-flow computation, autonomous navigation, object avoidance or intercept, real-time target tracking, and recognition. To reach this goal, a single chip was developed, which func ...
... low-level image processing in a variety of computationally intensive vision applications. These applications include optical-flow computation, autonomous navigation, object avoidance or intercept, real-time target tracking, and recognition. To reach this goal, a single chip was developed, which func ...
AS Electricity Part I
... If each resistive strip is 2.5 mm wide and of length 0.80 m, determine the thickness of each strip. Resistivity of the resistive material = 5.0 × 10–5 Ωm. ...
... If each resistive strip is 2.5 mm wide and of length 0.80 m, determine the thickness of each strip. Resistivity of the resistive material = 5.0 × 10–5 Ωm. ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.