
36-V, Low- or High-Side, Bidirectional, Zero-Drift
... The INA250 is a voltage-output, current-sensing amplifier family that integrates an internal shunt resistor to enable high-accuracy current measurements at common-mode voltages that can vary from 0 V to 36 V, independent of the supply voltage. The device is a bidirectional, low- or highside current- ...
... The INA250 is a voltage-output, current-sensing amplifier family that integrates an internal shunt resistor to enable high-accuracy current measurements at common-mode voltages that can vary from 0 V to 36 V, independent of the supply voltage. The device is a bidirectional, low- or highside current- ...
7-Port Hub for the Universal Serial Bus w
... with the USB 2.0 specification. Because this device is implemented with a digital state machine instead of a microcontroller, no software programming is required. Fully compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support full-sp ...
... with the USB 2.0 specification. Because this device is implemented with a digital state machine instead of a microcontroller, no software programming is required. Fully compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support full-sp ...
UNISONIC TECHNOLOGIES CO., LTD MC34118
... To distinguish speech (consists of bursts) from background noise (a relatively constant signal level) is the main purpose of the background noise monitors. There is one background noise monitor for the receive path and another one for the transmit path. The receive background noise monitor is operat ...
... To distinguish speech (consists of bursts) from background noise (a relatively constant signal level) is the main purpose of the background noise monitors. There is one background noise monitor for the receive path and another one for the transmit path. The receive background noise monitor is operat ...
optimizing the design of 3.5kw single-mosfet power
... “snap ”, that is for its peak recovery current to decay to zero so fast that the entire power circuit is shocked into oscillation. Should this occur, EMI becomes unmanageably high. As the MOSFET is slowed down by gradually increasing RG, peak recovery currents in the FRED diminish rapidly. Initiall ...
... “snap ”, that is for its peak recovery current to decay to zero so fast that the entire power circuit is shocked into oscillation. Should this occur, EMI becomes unmanageably high. As the MOSFET is slowed down by gradually increasing RG, peak recovery currents in the FRED diminish rapidly. Initiall ...
MAX15035 15A Step-Down Regulator with Internal Switches General Description Features
... and high DC-output accuracy. Combined with the internal low on-resistance MOSFETs, the MAX15035 provides a highly efficient and compact solution for small form factor applications that need a high-power density. Maxim’s proprietary Quick-PWM™ quick-response, constant on-time PWM control scheme handl ...
... and high DC-output accuracy. Combined with the internal low on-resistance MOSFETs, the MAX15035 provides a highly efficient and compact solution for small form factor applications that need a high-power density. Maxim’s proprietary Quick-PWM™ quick-response, constant on-time PWM control scheme handl ...
PSPICE Schematic Student 9.1 Tutorial
... on menu “Edit—Flip”. This will flip R1 upside down. This is to ensure the resistor R1 will have correct current polarity: current flows from node 1 to 2, instead of from node 2 to 1. Now your circuit should look like follow. ...
... on menu “Edit—Flip”. This will flip R1 upside down. This is to ensure the resistor R1 will have correct current polarity: current flows from node 1 to 2, instead of from node 2 to 1. Now your circuit should look like follow. ...
AAT3604B 数据资料DataSheet下载
... ideal power solution to power OLED, LCD, and CCD applications. The step-up converter offers a true load disconnect feature which isolates the load from the power source when EN1 is pulled low. This eliminates leakage current and isolates the output while the device is disabled. The step-down DC/DC c ...
... ideal power solution to power OLED, LCD, and CCD applications. The step-up converter offers a true load disconnect feature which isolates the load from the power source when EN1 is pulled low. This eliminates leakage current and isolates the output while the device is disabled. The step-down DC/DC c ...
LM34923 80V, 600 mA Constant On-Time Buck Switching Regulator
... The LM34923 operates in discontinuous conduction mode at light load currents, and continuous conduction mode at heavy load current. In discontinuous conduction mode, current through the output inductor starts at zero and ramps up to a peak during the on-time, then ramps back to zero before the end o ...
... The LM34923 operates in discontinuous conduction mode at light load currents, and continuous conduction mode at heavy load current. In discontinuous conduction mode, current through the output inductor starts at zero and ramps up to a peak during the on-time, then ramps back to zero before the end o ...
Physics 3204: Current Electricity Notes
... • the natural state of electrons in a wire, or other conductor, is to simply spread out • a battery, or other power supply, will given electrons energy to move through a complete circuit • the physics convention is that electrons will flow through a circuit from the direction of the negative term ...
... • the natural state of electrons in a wire, or other conductor, is to simply spread out • a battery, or other power supply, will given electrons energy to move through a complete circuit • the physics convention is that electrons will flow through a circuit from the direction of the negative term ...
6-rows 85 mA LEDs driver with boost regulator for LCD panels
... the device is turned off. This pin is connected to a permanently active 2.5 µA current source; when sudden device turn-on at power-up is required, this pin must be left floating or connected to a delay capacitor. Starting from an ON state, when the LED7707 is turned off, it quickly discharges the So ...
... the device is turned off. This pin is connected to a permanently active 2.5 µA current source; when sudden device turn-on at power-up is required, this pin must be left floating or connected to a delay capacitor. Starting from an ON state, when the LED7707 is turned off, it quickly discharges the So ...
RF7188 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE
... the effective efficiency by minimizing the PLOSS term in the equation. An ASM may have a typical loss of 1.2dB in LB and 1.4dB in high band. To be added to this is trace losses and mismatch losses. A post PA loss of 1.5dB in LB and 1.8dB in HB is common. With the integration of a low loss pHEMT swit ...
... the effective efficiency by minimizing the PLOSS term in the equation. An ASM may have a typical loss of 1.2dB in LB and 1.4dB in high band. To be added to this is trace losses and mismatch losses. A post PA loss of 1.5dB in LB and 1.8dB in HB is common. With the integration of a low loss pHEMT swit ...
Electricity2
... Think of a circuit as a shopping mall! Resistors are places where the electrons (people) can spend their voltage (money!) on things. Resistors are basically the same as light bulbs, except they don't use the energy for anything, they just waste it. Resistors don't slow down current or anything like ...
... Think of a circuit as a shopping mall! Resistors are places where the electrons (people) can spend their voltage (money!) on things. Resistors are basically the same as light bulbs, except they don't use the energy for anything, they just waste it. Resistors don't slow down current or anything like ...
INA101 数据资料 dataSheet 下载
... The INA101 is laser trimmed for low offset voltage and drift. Most applications require no external offset adjustment. Figure 2 shows connection of an optional potentiometer connected to the Offset Adjust pins for trimming the input offset voltage. (Pin numbers shown are for the DIP package.) Use th ...
... The INA101 is laser trimmed for low offset voltage and drift. Most applications require no external offset adjustment. Figure 2 shows connection of an optional potentiometer connected to the Offset Adjust pins for trimming the input offset voltage. (Pin numbers shown are for the DIP package.) Use th ...
FAN5353 3 MHz, 3 A Synchronous Buck Regulator
... If large values of output capacitance are used, the regulator may fail to start. If VOUT fails to achieve regulation within 320 µs from the beginning of soft-start, the regulator shuts down and waits 1200 µs before attempting a restart. If the regulator is at its current limit for more than about 60 ...
... If large values of output capacitance are used, the regulator may fail to start. If VOUT fails to achieve regulation within 320 µs from the beginning of soft-start, the regulator shuts down and waits 1200 µs before attempting a restart. If the regulator is at its current limit for more than about 60 ...
asic 2001: formatting and submitting your paper
... has become increasingly troubling as the SRAM cell size is reduced ,such as short channel effect ,higher DIBL, poor sub threshold swing collectively known as SCE. The Fin type mosfet(FinFET)is one of the most desired device to scaled CMOS devise. To solve this problem 3-D device structure could be a ...
... has become increasingly troubling as the SRAM cell size is reduced ,such as short channel effect ,higher DIBL, poor sub threshold swing collectively known as SCE. The Fin type mosfet(FinFET)is one of the most desired device to scaled CMOS devise. To solve this problem 3-D device structure could be a ...
File tda1524a | allcomponents.ru
... There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high populat ...
... There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high populat ...
DATA SHEET
... There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high populat ...
... There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high populat ...
Power-Conscious Design of the Cell Processor`s Synergistic
... normalized delay of data from the input to the output of the gate. For the dynamic implementation, the normalized active power consumption is plotted as a function of the normalized delay from clock arriving at the gate to the output appears. For both cases, the loading at the output is increased to ...
... normalized delay of data from the input to the output of the gate. For the dynamic implementation, the normalized active power consumption is plotted as a function of the normalized delay from clock arriving at the gate to the output appears. For both cases, the loading at the output is increased to ...
Paper Title (use style: paper title) - Infoscience
... A number of papers have addressed the cascode compensation [2-5]. A major benefit of the cascodecompensated amplifiers is its power efficiency. For example in [2], authors find that it can achieve 1.8 times more GBW than a miller compensated amplifier for the same phase margin and power consumption. ...
... A number of papers have addressed the cascode compensation [2-5]. A major benefit of the cascodecompensated amplifiers is its power efficiency. For example in [2], authors find that it can achieve 1.8 times more GBW than a miller compensated amplifier for the same phase margin and power consumption. ...
CMOS
Complementary metal–oxide–semiconductor (CMOS) /ˈsiːmɒs/ is a technology for constructing integrated circuits. CMOS technology is used in microprocessors, microcontrollers, static RAM, and other digital logic circuits. CMOS technology is also used for several analog circuits such as image sensors (CMOS sensor), data converters, and highly integrated transceivers for many types of communication. In 1963, while working for Fairchild Semiconductor, Frank Wanlass patented CMOS (US patent 3,356,858).CMOS is also sometimes referred to as complementary-symmetry metal–oxide–semiconductor (or COS-MOS).The words ""complementary-symmetry"" refer to the fact that the typical design style with CMOS uses complementary and symmetrical pairs of p-type and n-type metal oxide semiconductor field effect transistors (MOSFETs) for logic functions.Two important characteristics of CMOS devices are high noise immunity and low static power consumption.Since one transistor of the pair is always off, the series combination draws significant power only momentarily during switching between on and off states. Consequently, CMOS devices do not produce as much waste heat as other forms of logic, for example transistor–transistor logic (TTL) or NMOS logic, which normally have some standing current even when not changing state. CMOS also allows a high density of logic functions on a chip. It was primarily for this reason that CMOS became the most used technology to be implemented in VLSI chips.The phrase ""metal–oxide–semiconductor"" is a reference to the physical structure of certain field-effect transistors, having a metal gate electrode placed on top of an oxide insulator, which in turn is on top of a semiconductor material. Aluminium was once used but now the material is polysilicon. Other metal gates have made a comeback with the advent of high-k dielectric materials in the CMOS process, as announced by IBM and Intel for the 45 nanometer node and beyond.