CURRENT ELECTRICITY (Important formulae and Concepts)
... 8. Write the mathematical relation for the resistivity of a material in terms of relaxation time,number density and mass and charge carriers in it. Explain, using the relation, why the resisitivity of a metal increases and that of a semiconductor decreases with rise in temperature. 9. For the poten ...
... 8. Write the mathematical relation for the resistivity of a material in terms of relaxation time,number density and mass and charge carriers in it. Explain, using the relation, why the resisitivity of a metal increases and that of a semiconductor decreases with rise in temperature. 9. For the poten ...
Joule thief - getting power from dead batteries
... works for you. You can also use a potentiometer (a variable resistor) so that you can easily adjust it to select the resistance that gives the best light. Toroid ferrite core - Some people have gotten these by opening up compact fluorescent lightbulbs (CFLs). I took mine out of some device whose ori ...
... works for you. You can also use a potentiometer (a variable resistor) so that you can easily adjust it to select the resistance that gives the best light. Toroid ferrite core - Some people have gotten these by opening up compact fluorescent lightbulbs (CFLs). I took mine out of some device whose ori ...
AD8278 英文数据手册DataSheet 下载
... exceed its maximum junction temperature, with corresponding negative effects on reliability. Figure 3 and Figure 29, combined with knowledge of the supply voltages and ambient temperature of the part, can be used to determine whether a short circuit will cause the part to exceed its maximum junction ...
... exceed its maximum junction temperature, with corresponding negative effects on reliability. Figure 3 and Figure 29, combined with knowledge of the supply voltages and ambient temperature of the part, can be used to determine whether a short circuit will cause the part to exceed its maximum junction ...
MAX9129 Quad Bus LVDS Driver with Flow-Through Pinout General Description
... Note 8: tSKD3 is the magnitude difference of any differential propagation delays between devices at the same VCC and within 5°C of each other. Note 9: tSKD4 is the magnitude difference of any differential propagation delays between devices operating over the rated supply and temperature ranges. Note ...
... Note 8: tSKD3 is the magnitude difference of any differential propagation delays between devices at the same VCC and within 5°C of each other. Note 9: tSKD4 is the magnitude difference of any differential propagation delays between devices operating over the rated supply and temperature ranges. Note ...
HMC746LC3C 数据资料DataSheet下载
... The HMC746LC3C is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC746LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC746LC3C also features an output ...
... The HMC746LC3C is an AND/NAND/OR/NOR function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC746LC3C may be easily configured to provide any of the following logic functions: AND, NAND, OR and NOR. The HMC746LC3C also features an output ...
3B17 数据手册DataSheet 下载
... Output modules accept 0 to +10V (or +10V) single-ended signals and provide an isolated 4-20 mA (or 0-20 mA) process signal. All modules feature a universal pin-out and may be readily hot-swapped under full power and interchanged without disrupting field wiring. The Analog Devices 3B Series Signal Co ...
... Output modules accept 0 to +10V (or +10V) single-ended signals and provide an isolated 4-20 mA (or 0-20 mA) process signal. All modules feature a universal pin-out and may be readily hot-swapped under full power and interchanged without disrupting field wiring. The Analog Devices 3B Series Signal Co ...
On-site Measurement of Load and No-load Losses of
... The specified calibration errors are a part of the set of components that have a contribution in determining uncertainties of measurement in measuring transformer losses. In addition to the above mentioned ones, the contributions of uncertainty of measurements in the case of load loss measurement al ...
... The specified calibration errors are a part of the set of components that have a contribution in determining uncertainties of measurement in measuring transformer losses. In addition to the above mentioned ones, the contributions of uncertainty of measurements in the case of load loss measurement al ...
NCP1219PRINTGEVB NCP1219 48 W Printer Evaluation Board User's Manual
... The HV pin of the NCP1219 can be tied directly to the bulk storage capacitor and used to supply the IC in the absence of an auxiliary winding, for instance, during the startup of the adapter. The startup current is controlled internally and supplied to the VCC capacitor through the VCC pin. While VC ...
... The HV pin of the NCP1219 can be tied directly to the bulk storage capacitor and used to supply the IC in the absence of an auxiliary winding, for instance, during the startup of the adapter. The startup current is controlled internally and supplied to the VCC capacitor through the VCC pin. While VC ...
LV8860V - ON Semiconductor
... 1-2-Appendix1. Description of synchronous rectification The synchronous rectification is one method for current regeneration in PWM speed control, which realizes high efficiency and low heat generation compared to the conventional diode rectification. The following figure explains operation of the o ...
... 1-2-Appendix1. Description of synchronous rectification The synchronous rectification is one method for current regeneration in PWM speed control, which realizes high efficiency and low heat generation compared to the conventional diode rectification. The following figure explains operation of the o ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.