BUF602 数据资料 dataSheet 下载
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
... This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete devi ...
Control of DFIG-WT under unbalanced grid voltage conditions
... The P* and Q* values correspond to the desired output at the stator windings. However the electrical generator itself takes a certain value of Q and P, due to their magnetic fields and internal losses, which are not being considered, as far as they are unknown most of the times. Therefore, it is als ...
... The P* and Q* values correspond to the desired output at the stator windings. However the electrical generator itself takes a certain value of Q and P, due to their magnetic fields and internal losses, which are not being considered, as far as they are unknown most of the times. Therefore, it is als ...
HSPICE Device Models Quick Reference Guide
... Capacitance at room temperature, as a function of a node voltage, branch current, or independent variable such as time, frequency (HERTZ), or temperature. ...
... Capacitance at room temperature, as a function of a node voltage, branch current, or independent variable such as time, frequency (HERTZ), or temperature. ...
ISL9R460PF2 4 A, 600 V, STEALTH Diode —
... STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in sw ...
... STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in sw ...
Circuit Note CN-0190
... information required to build an optimized linear or dc-todc converter. The program performs all the tedious calculations and provides a final schematic, recommended bill-of-materials, and predicted performance. The component recommendations come from a large database of parts with known electrical ...
... information required to build an optimized linear or dc-todc converter. The program performs all the tedious calculations and provides a final schematic, recommended bill-of-materials, and predicted performance. The component recommendations come from a large database of parts with known electrical ...
Powering Results with Precision and Simplicity e-Guide
... Achieving More Power in Less Space Reliability testing, such as environmental testing or life testing, requires testing many components, sub-assemblies, or products – and typically a large test system. If the test instruments are smaller, there’s a better chance that all the necessary instrumentatio ...
... Achieving More Power in Less Space Reliability testing, such as environmental testing or life testing, requires testing many components, sub-assemblies, or products – and typically a large test system. If the test instruments are smaller, there’s a better chance that all the necessary instrumentatio ...
MULTISIM Instruction Manual
... All circuits must be grounded before the circuit can be simulated. Click on Ground in the toolbar to ground the circuit. If the circuit is not grounded Multisim will not run the simulation. ...
... All circuits must be grounded before the circuit can be simulated. Click on Ground in the toolbar to ground the circuit. If the circuit is not grounded Multisim will not run the simulation. ...
Note to EE 312 Students
... forward recovery time in the 150 to 250 ns range. These times are sufficiently short so that the 1N4004 silicon diode can be switched on and off at a rate up to 100 kHz. To achieve 150 to 250 ns recovery times the manufacturer often intentionally adds impurities such as gold which act as recombinati ...
... forward recovery time in the 150 to 250 ns range. These times are sufficiently short so that the 1N4004 silicon diode can be switched on and off at a rate up to 100 kHz. To achieve 150 to 250 ns recovery times the manufacturer often intentionally adds impurities such as gold which act as recombinati ...
Answers to Coursebook questions – Equation Chapter 1 Section
... If they are in series then they will take the same current, and the sum of the potential differences across each resistor will be the emf, i.e. 1.5 V. So we must use trial and error and look for horizontal lines (equal current) that intersect the two curves. We read off the voltage for each and see ...
... If they are in series then they will take the same current, and the sum of the potential differences across each resistor will be the emf, i.e. 1.5 V. So we must use trial and error and look for horizontal lines (equal current) that intersect the two curves. We read off the voltage for each and see ...
Channel Capacity of Magnetic Induction Based Wireless
... directly related to WUSNs, but to metamaterials and several assumptions were made, which do not hold for WUSNs, e.g. very small coil sizes, small distances between relays (only a few centimeters), and no influence of the environment on the quality of transmission. In [5], an MI-WUSN channel model wi ...
... directly related to WUSNs, but to metamaterials and several assumptions were made, which do not hold for WUSNs, e.g. very small coil sizes, small distances between relays (only a few centimeters), and no influence of the environment on the quality of transmission. In [5], an MI-WUSN channel model wi ...
BU4S584G2
... damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembl ...
... damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembl ...
MAX4376/MAX4377/MAX4378 Single/Dual/Quad, High-Side Current-Sense Amplifiers with Internal Gain General Description
... High-side current monitoring is especially useful in battery-powered systems since it does not interfere with the ground path of the battery charger. The input common-mode range of 0 to +28V is independent of the supply voltage and ensures that the current-sense feedback remains viable even when con ...
... High-side current monitoring is especially useful in battery-powered systems since it does not interfere with the ground path of the battery charger. The input common-mode range of 0 to +28V is independent of the supply voltage and ensures that the current-sense feedback remains viable even when con ...
BD9B300MUV
... BD9B300MUV is a synchronous buck switching regulator with built-in low on-resistance power MOSFETs. This IC, which is capable of providing current up to 3A, features fast transient response by employing constant on-time control system. It offers high oscillating frequency at low inductance. With its ...
... BD9B300MUV is a synchronous buck switching regulator with built-in low on-resistance power MOSFETs. This IC, which is capable of providing current up to 3A, features fast transient response by employing constant on-time control system. It offers high oscillating frequency at low inductance. With its ...
Uses of a Potential Divider
... To derive and know how to use the potential divider equation. To know that the load affects the output of a potential divider To know the applications of potential dividers; to detect temperature or light levels. ...
... To derive and know how to use the potential divider equation. To know that the load affects the output of a potential divider To know the applications of potential dividers; to detect temperature or light levels. ...
BDTIC www.BDTIC.com/infineon TLV4946K, TLV4946-2K
... Precise magnetic switching thresholds and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. Offset voltages generated by temperature-induced stress or overmolding are canceled so that high accuracy is achieved. The IC has an open collector output ...
... Precise magnetic switching thresholds and high temperature stability are achieved by active compensation circuits and chopper techniques on chip. Offset voltages generated by temperature-induced stress or overmolding are canceled so that high accuracy is achieved. The IC has an open collector output ...
TSP Coil Driver Output OORH
... NOTE: The coil drive control signals, where two valves are shown in schematic, share a common return. 1. Ensure truck power is OFF. 2. Disconnect connectors from indicated control valve(s). 3. Disconnect indicated VSM connector. 4. Set DMM to volts scale. 5. At the valve harness connector, measure v ...
... NOTE: The coil drive control signals, where two valves are shown in schematic, share a common return. 1. Ensure truck power is OFF. 2. Disconnect connectors from indicated control valve(s). 3. Disconnect indicated VSM connector. 4. Set DMM to volts scale. 5. At the valve harness connector, measure v ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.