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HMC860LP3E - Hittite Microwave Corporation
HMC860LP3E - Hittite Microwave Corporation

... performance is not critical for a particular output, the 100nF capacitor can be omitted for the respective regulator. In this case, noise spectral density will typically increase by a factor of 20X at 10kHz. The 1µF REF capacitor causes a 25ms typical turn-on start-up time. ...
DRV8313 2.5-A Triple 1/2-H Bridge Driver (Rev
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... half-H-bridge drivers. The device is intended to drive a three-phase brushless-DC motor, although it can also be used to drive solenoids or other loads. Each output driver channel consists of N-channel power MOSFETs configured in a 1/2-H-bridge configuration. Each 1/2-H-bridge driver has a dedicated ...
LM258A-EP DUAL OPERATIONAL AMPLIFIERS
LM258A-EP DUAL OPERATIONAL AMPLIFIERS

... to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmen ...
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... The horn portion of the NS4-MCW Appliance can be field set to provide either Continuous Horn or Code 3 Horn. The sound output can be field set for High (HI) or Low (LO) dBA. The NS4-MCW Horn Strobe can also be used with a Sync Module (SM), Dual Sync Module (DSM) or Power Supply (PS-12/24-8) to provi ...
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eletrical-technology-lab-manual-final

... of the engineering practice. Individual and Team Work: Function effectively as an individual, and as a member or leader in diverse teams, and in multidisciplinary settings. Communication: Communicate effectively on complex engineering activities with the engineering community and with society at lar ...
High Speed Super Low Power SRAM CS18LV20483
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... Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 2.7 to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.50uA and maximum access time of 55/70ns in 3 ...
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... Detectors of wire resistance temperature common employ platinum, nickel or resistance wire elements, whose resistance variation with temperature has high intrinsic accuracy. They are available in many configurations and size and as shielded or open units for both immersion and surface applications. ...
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... In addition to higher performance than fixed regulators, the LM150 series offers full overload protection available only in IC's. Included on the chip are current limit, thermal overload protection and safe area protection. All overload protection circuitry remains fully functional even if the adjus ...
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... while having an acceptable performance for achieving input unity power factor, are relatively complex to implement. In the case of digital programming, powerful digital signal processors (DSPs) are required in addition to analog-to-digital converters, phase-locked loops, and other demanding software ...
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... for powering SL10 PMTs in iTOP detector. The power supply was designed in University of Hawaii at Manoa for KEK High Energy Accelerator research organization. There were some requirements and restrictions to consider when designing the power supply. The first assignment for the project was to design ...
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... The forward voltage drop of a Schottky diode represents the conduction loss in the diode, while the diode capacitance (CT) represents the switching loss. For diode selection, both forward voltage drop and diode capacitance need to be considered. Schottky diodes with higher current ratings usually ha ...
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... EMC2, EMC, CLARiiON, VNX, Celerra, PowerPath, SnapSure, Symmetrix, UltraFlex, Virtual Provisioning, and the EMC logo are registered trademarks or trademarks of EMC Corporation in the United States and other countries. VMware is a registered trademarks or trademarks of VMware, Inc., in the United Sta ...
Glossary of Electrical and Mechanical Terminology and Definitions
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... alternating current (ac). A current which reverses in regularly recurring intervals of time and which has alternately positive and negative values, and occurring a specified number of times per second. The number is expressed in Hertz (cycles per second). alternator. A device for converting mechani ...
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... The MAX6339 RESET output is asserted low when any of the monitored IN_ voltages drop below its specified reset threshold (or above for -5V option) and remain low for the reset timeout period (140ms minimum) after all inputs exceed their thresholds (Figure 2). The output is open drain with a weak int ...
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Lab #11 Diodes - Northern Arizona University

... For a resistor, the relationship between current and resistance is linear, as expressed by Ohm’s Law, v = i · R or i = v / R. Both terminals are equivalent, so you can connect the resistor in either orientation. For a diode, the terminals are different and it matters how you connect the diode in the ...
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Preliminary Detail of Signal Input/Output Terminals

... erroneous fault signals. To avoid these problems, the maximum ripple on the supply should be less than 1V/µs. The voltage at the COM terminal is different from that at the N(*)*1 power terminal by the sensing resistor. It is very important that all control circuits and power supplies are referred t ...
MAX16929 Automotive TFT-LCD Power Supply with Boost Converter and Gate Voltage Regulators
MAX16929 Automotive TFT-LCD Power Supply with Boost Converter and Gate Voltage Regulators

... Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Expo ...
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Power MOSFET



A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
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