MPXM2051G, 0 to 10 kPa, Gauge Compensated Pressure Sensor
... Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of ...
... Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of ...
Lecture 14: BJT Small-Signal Equivalent Circuit Models.
... 1. r: the small-signal, active mode input resistance between the base and emitter, as “seen looking into the base.” 2. re: the small-signal, active mode output resistance between the base and emitter, as “seen looking into the emitter.” These resistances are NOT the same. Why? Because the transisto ...
... 1. r: the small-signal, active mode input resistance between the base and emitter, as “seen looking into the base.” 2. re: the small-signal, active mode output resistance between the base and emitter, as “seen looking into the emitter.” These resistances are NOT the same. Why? Because the transisto ...
Automatic Resistance Measurements on High Temperature
... depending on the range and value sourced. Since two voltage readings are required for each resistance calculation, each complete cycle could take between 20ms to 30ms. The bus transfer rate of the 2182 for ASCII readings is the limiting factor. However, storing data to the internal data buffer of th ...
... depending on the range and value sourced. Since two voltage readings are required for each resistance calculation, each complete cycle could take between 20ms to 30ms. The bus transfer rate of the 2182 for ASCII readings is the limiting factor. However, storing data to the internal data buffer of th ...
ADN4666 数据手册DataSheet 下载
... Receiver Channel 1 Inverting Input. When this input is more negative than RIN1+, ROUT1 is high. When this input is more positive than RIN1+, ROUT1 is low. Receiver Channel 1 Noninverting Input. When this input is more positive than RIN1−, ROUT1 is high. When this input is more negative than RIN1−, R ...
... Receiver Channel 1 Inverting Input. When this input is more negative than RIN1+, ROUT1 is high. When this input is more positive than RIN1+, ROUT1 is low. Receiver Channel 1 Noninverting Input. When this input is more positive than RIN1−, ROUT1 is high. When this input is more negative than RIN1−, R ...
ADG467 数据手册DataSheet下载
... circuit, the PMOS transistor enters a saturated mode of operation as the drain voltage exceeds VSS – VTP. See Figure 20 below. As in the case of the positive overvoltage, the other MOS devices are nonsaturated. NEGATIVE OVERVOLTAGE (–20V) NEGATIVE OVERVOLTAGE (–20V) ...
... circuit, the PMOS transistor enters a saturated mode of operation as the drain voltage exceeds VSS – VTP. See Figure 20 below. As in the case of the positive overvoltage, the other MOS devices are nonsaturated. NEGATIVE OVERVOLTAGE (–20V) NEGATIVE OVERVOLTAGE (–20V) ...
Deuterium Triode Thyratron
... 5. The pulse width is measured on the discharge current waveform at the half peak current level. 6. For anode current pulse widths greater than 0.3 microseconds but less than 10 microseconds, a useful formula for estimating the allowable peak current is ib=ib0 (3/tp)Áת amps, where tp is the puls ...
... 5. The pulse width is measured on the discharge current waveform at the half peak current level. 6. For anode current pulse widths greater than 0.3 microseconds but less than 10 microseconds, a useful formula for estimating the allowable peak current is ib=ib0 (3/tp)Áת amps, where tp is the puls ...
MXT2576 Series SIMPLE SWITCHER 3A Step
... recommended. Higher voltage electrolytic capacitors generally have lower ESR numbers, and for this reason it may be necessary to select a capacitor rate for a higher voltage than would normally be needed. 4. Catch Diode Selection (D1) A. The catch-diode current rating must be at least 1.2 times grea ...
... recommended. Higher voltage electrolytic capacitors generally have lower ESR numbers, and for this reason it may be necessary to select a capacitor rate for a higher voltage than would normally be needed. 4. Catch Diode Selection (D1) A. The catch-diode current rating must be at least 1.2 times grea ...
OPA549 High-Voltage, High-Current OPERATIONAL AMPLIFIER DESCRIPTION
... should be disconnected (open) or pulled to at least 2.4V above Ref. It should be noted that driving the E/S pin high (output enabled) does not defeat internal thermal shutdown; however, it does prevent the user from monitoring the thermal shutdown status. Figure 3 shows an example implementing this ...
... should be disconnected (open) or pulled to at least 2.4V above Ref. It should be noted that driving the E/S pin high (output enabled) does not defeat internal thermal shutdown; however, it does prevent the user from monitoring the thermal shutdown status. Figure 3 shows an example implementing this ...
UC2907 数据资料 dataSheet 下载
... (–) SENSE terminal. It should be connected as close to the power source as possible so that voltage drops across the return line and current-sensing impedances lie between this terminal and the (–) SENSE point. VREF: (Pin 7) The internal voltage reference is a band-gap circuit set at 2.0 V with resp ...
... (–) SENSE terminal. It should be connected as close to the power source as possible so that voltage drops across the return line and current-sensing impedances lie between this terminal and the (–) SENSE point. VREF: (Pin 7) The internal voltage reference is a band-gap circuit set at 2.0 V with resp ...
DS1818 3.3V EconoReset with Pushbutton FEATURES PIN ASSIGNMENT
... NOTES: 1. All voltages are referenced to ground. 2. Measured with VCC ³ 2.7V. 3. A 1 kW external pull-up resistor may be required in some applications for proper operation of the microprocessor reset control circuit. 4. Measured with RST output open. 5. Measured with 2.7V £ VCC £ 3.3V. 6. tR = 5 ms. ...
... NOTES: 1. All voltages are referenced to ground. 2. Measured with VCC ³ 2.7V. 3. A 1 kW external pull-up resistor may be required in some applications for proper operation of the microprocessor reset control circuit. 4. Measured with RST output open. 5. Measured with 2.7V £ VCC £ 3.3V. 6. tR = 5 ms. ...
CQ23562567
... surface. In case of ideal sliding mode motion the switching line and its phase velocities should be identically zero i.e s=Cx 1 + x 2 = 0 s=Cx 2 + ẋ 2 = 0 where, ẋ1 = x2 In other words it means that the state trajectories x1 (t) and x2 (t) of the controlled plant satisfies the equation s = 0 at ev ...
... surface. In case of ideal sliding mode motion the switching line and its phase velocities should be identically zero i.e s=Cx 1 + x 2 = 0 s=Cx 2 + ẋ 2 = 0 where, ẋ1 = x2 In other words it means that the state trajectories x1 (t) and x2 (t) of the controlled plant satisfies the equation s = 0 at ev ...
General Description Features
... remote diode is between 0°C and +125°C and the temperature of the MAX6627/MAX6628 is +30°C. The temperature is converted to a 12-bit + sign word with 0.0625°C resolution. The architecture of the device is capable of interpreting data as high as +145°C from the remote sensor. The MAX6627/MAX6628 temp ...
... remote diode is between 0°C and +125°C and the temperature of the MAX6627/MAX6628 is +30°C. The temperature is converted to a 12-bit + sign word with 0.0625°C resolution. The architecture of the device is capable of interpreting data as high as +145°C from the remote sensor. The MAX6627/MAX6628 temp ...
A 60-GHz CMOS Receiver Front-End
... The three inductors are realized as the folded microstrip depicted in Fig. 2(a). With an equivalent parallel resistance of contributes negligible noise. about 700 , It is desirable to avoid AC coupling between the two stages of the LNA and between the LNA and the mixers. Metal-sandwich capacitors su ...
... The three inductors are realized as the folded microstrip depicted in Fig. 2(a). With an equivalent parallel resistance of contributes negligible noise. about 700 , It is desirable to avoid AC coupling between the two stages of the LNA and between the LNA and the mixers. Metal-sandwich capacitors su ...
CURRENT ELECTRICITY (Important formulae and Concepts)
... 8. Write the mathematical relation for the resistivity of a material in terms of relaxation time,number density and mass and charge carriers in it. Explain, using the relation, why the resisitivity of a metal increases and that of a semiconductor decreases with rise in temperature. 9. For the poten ...
... 8. Write the mathematical relation for the resistivity of a material in terms of relaxation time,number density and mass and charge carriers in it. Explain, using the relation, why the resisitivity of a metal increases and that of a semiconductor decreases with rise in temperature. 9. For the poten ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.