LV8860V - ON Semiconductor
... 1-2-Appendix1. Description of synchronous rectification The synchronous rectification is one method for current regeneration in PWM speed control, which realizes high efficiency and low heat generation compared to the conventional diode rectification. The following figure explains operation of the o ...
... 1-2-Appendix1. Description of synchronous rectification The synchronous rectification is one method for current regeneration in PWM speed control, which realizes high efficiency and low heat generation compared to the conventional diode rectification. The following figure explains operation of the o ...
Ecograph A Advanced Paperless Recorder
... • Permanent storage of the preset unit parameters in the Flash memory (non volatile) Comparison feed rate to storage interval Function principle of the display and recording/storage: Data is stored in defined intervals, dependent on the selected feed rate (it is possible to define a different feed r ...
... • Permanent storage of the preset unit parameters in the Flash memory (non volatile) Comparison feed rate to storage interval Function principle of the display and recording/storage: Data is stored in defined intervals, dependent on the selected feed rate (it is possible to define a different feed r ...
Electrical Resistance
... It is most likely that the short circuit was caused by a breakdown in the insulation between two conductors after prolonged twisting and bending. Such a breakdown may occur in many ways - deterioration of insulation with age and deterioration of insulation due to excessive heat. In such circumstance ...
... It is most likely that the short circuit was caused by a breakdown in the insulation between two conductors after prolonged twisting and bending. Such a breakdown may occur in many ways - deterioration of insulation with age and deterioration of insulation due to excessive heat. In such circumstance ...
OPA1632 数据资料 dataSheet 下载
... These holes should be 13mils (0,03302cm) in diameter. Keep them small so that solder wicking through the holes is not a problem during reflow. 4. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. These vias help dissipate the heat generated by the OPA163 ...
... These holes should be 13mils (0,03302cm) in diameter. Keep them small so that solder wicking through the holes is not a problem during reflow. 4. Additional vias may be placed anywhere along the thermal plane outside of the thermal pad area. These vias help dissipate the heat generated by the OPA163 ...
DC Machines
... equipment The purposes of this equipment are. To protect the motor against damage due to short circuits in the equipment from long-term overloads from excessive starting currents To provide a convenient manner in which to ...
... equipment The purposes of this equipment are. To protect the motor against damage due to short circuits in the equipment from long-term overloads from excessive starting currents To provide a convenient manner in which to ...
Alberta Reliability Standard Voltage and Reactive Control VAR-001-AB- 1a4
... R1 The ISO must develop and maintain requirements for monitoring and controllingspecify a system voltage levels and reactive power flows within the transmission system, including consulting with each operator of a transmission facility and any transmission operatorrange with an associated tolerance ...
... R1 The ISO must develop and maintain requirements for monitoring and controllingspecify a system voltage levels and reactive power flows within the transmission system, including consulting with each operator of a transmission facility and any transmission operatorrange with an associated tolerance ...
Analysis of Performance of Multilevel Cascaded Inverter
... used for generating higher voltage instead of using one converter to convert an AC current into a DC current. So, Cascade multilevel inverter (CMI) is a power electronic device which is built to synthesize a desired AC voltage from several levels of DC voltages as it easily provides the high power w ...
... used for generating higher voltage instead of using one converter to convert an AC current into a DC current. So, Cascade multilevel inverter (CMI) is a power electronic device which is built to synthesize a desired AC voltage from several levels of DC voltages as it easily provides the high power w ...
TPS62110 数据资料 dataSheet 下载
... synchronous step-down dc-dc converters that are ideally suited for systems powered from a 2-cell Li-ion battery or from a 12-V or 15-V rail. The TPS6211x is a synchronous PWM converter with integrated N- and P-channel power MOSFET switches. Synchronous rectification is used to increase efficiency an ...
... synchronous step-down dc-dc converters that are ideally suited for systems powered from a 2-cell Li-ion battery or from a 12-V or 15-V rail. The TPS6211x is a synchronous PWM converter with integrated N- and P-channel power MOSFET switches. Synchronous rectification is used to increase efficiency an ...
BQ24004 数据资料 dataSheet 下载
... The bq2400x series ICs are advanced Li-Ion linear charge management devices for highly integrated and space-limited applications. They combine high- accuracy current and voltage regulation; FET pass- transistor and reverse-blocking Schottky; battery conditioning, temperature, or input-power monitori ...
... The bq2400x series ICs are advanced Li-Ion linear charge management devices for highly integrated and space-limited applications. They combine high- accuracy current and voltage regulation; FET pass- transistor and reverse-blocking Schottky; battery conditioning, temperature, or input-power monitori ...
Sep 1992 Design Techniques for Electrostatic Discharge Protection
... Crystal Oscillator Op amps have found wide use in low-frequency (≤100kHz) crystal oscillator circuits, but just haven’t had the bandwidth to operate successfully at higher frequencies. The LT1190 and LT1191 make excellent gain stages for high-frequency Colpitts oscillators. A practical implementatio ...
... Crystal Oscillator Op amps have found wide use in low-frequency (≤100kHz) crystal oscillator circuits, but just haven’t had the bandwidth to operate successfully at higher frequencies. The LT1190 and LT1191 make excellent gain stages for high-frequency Colpitts oscillators. A practical implementatio ...
PRATHAM: A Power Delivery-Aware and Thermal-Aware Mapping Framework for Parallel
... our analysis at 32nm. We consider 64-core and 144-core 3D MPSoC platforms, with dimensions 4×4×4 and 6×6×4 (dimx×dimy×dimz). The cores are inter-connected using a 3D mesh NoC topology. Under nominal operating conditions, the maximum supply current values for the 64-core MPSoC, are assumed to be betw ...
... our analysis at 32nm. We consider 64-core and 144-core 3D MPSoC platforms, with dimensions 4×4×4 and 6×6×4 (dimx×dimy×dimz). The cores are inter-connected using a 3D mesh NoC topology. Under nominal operating conditions, the maximum supply current values for the 64-core MPSoC, are assumed to be betw ...
Impact of Gate Tunneling Current in Scaled MOS on Circuit
... on the oxide thickness dependent gate tunneling current contributions. Estimated gate current paths during the operation are shown schematically in Fig. 8. When the input is low and the gate tunneling current is significant, (i.e. )( ) will not reach due to the leakage current that flows from the ou ...
... on the oxide thickness dependent gate tunneling current contributions. Estimated gate current paths during the operation are shown schematically in Fig. 8. When the input is low and the gate tunneling current is significant, (i.e. )( ) will not reach due to the leakage current that flows from the ou ...
Asymmetrical Interrupting Current Rating of Medium-Voltage
... revision of the circuit breaker standards utilized the “S factor” as a multiplying factor that defined the total current a breaker was rated to interrupt at contact part. The newest revision of C37.04 replaced the S factor with the % dc as the method of evaluating the asymmetrical current offset. Th ...
... revision of the circuit breaker standards utilized the “S factor” as a multiplying factor that defined the total current a breaker was rated to interrupt at contact part. The newest revision of C37.04 replaced the S factor with the % dc as the method of evaluating the asymmetrical current offset. Th ...
Sensor specifications - CMA
... The sensor contains a sensing element and a signal-conditioning amplifier. The sensing element is a 0.4 resistor (0.3 W) connected between the red and black terminals. As the current passes through the resistor, a small potential difference can be measured across this resistor. This potential diff ...
... The sensor contains a sensing element and a signal-conditioning amplifier. The sensing element is a 0.4 resistor (0.3 W) connected between the red and black terminals. As the current passes through the resistor, a small potential difference can be measured across this resistor. This potential diff ...
Dual-Channel Pulse-Width-Modulation (PWM
... voltage drops too low (to approximately 2.9 V) for proper operation. A hysteresis voltage of 200 mV eliminates false triggering on noise and chattering. short-circuit protection (SCP) The TL1454A SCP function prevents damage to the power switches when the converter output is shorted to ground. In no ...
... voltage drops too low (to approximately 2.9 V) for proper operation. A hysteresis voltage of 200 mV eliminates false triggering on noise and chattering. short-circuit protection (SCP) The TL1454A SCP function prevents damage to the power switches when the converter output is shorted to ground. In no ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.