LM306 数据资料 dataSheet 下载
... NOTE 6: The response time specified is for a 100-mV input step with 5-mV overdrive and is the interval between the input step function and the instant when the output crosses 1.4 V. ...
... NOTE 6: The response time specified is for a 100-mV input step with 5-mV overdrive and is the interval between the input step function and the instant when the output crosses 1.4 V. ...
H50US60S FF FFH50US60S — STEALTH™ Diode Features
... The FFH50US60S is a STEALTH™ diode optimized for low loss performance in output rectification. The STEALTH™ family exhibits low reverse recovery current (IRR), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom pow ...
... The FFH50US60S is a STEALTH™ diode optimized for low loss performance in output rectification. The STEALTH™ family exhibits low reverse recovery current (IRR), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom pow ...
MAX9945 38V, Low-Noise, MOS-Input, Low-Power Op Amp General Description
... are commonly chosen to create large gains, while feedback capacitors help stabilize the amplifier by canceling any zeros in the transfer function created by a highly capacitive sensor or cabling. A combination of low-current noise and low-voltage noise is important for these applications. Take care ...
... are commonly chosen to create large gains, while feedback capacitors help stabilize the amplifier by canceling any zeros in the transfer function created by a highly capacitive sensor or cabling. A combination of low-current noise and low-voltage noise is important for these applications. Take care ...
MC33340, MC33342 Battery Fast Charge
... resistive voltage divider. The input has an impedance of approximately 6.0 MW and a maximum voltage range of −1.0 V to VCC + 0.6 V or 0 V to 10 V, whichever is lower. The 10 V upper limit is set by an internal zener clamp that provides protection in the event of an electrostatic discharge. The VFC i ...
... resistive voltage divider. The input has an impedance of approximately 6.0 MW and a maximum voltage range of −1.0 V to VCC + 0.6 V or 0 V to 10 V, whichever is lower. The 10 V upper limit is set by an internal zener clamp that provides protection in the event of an electrostatic discharge. The VFC i ...
LM2902/ LM2902A/ LM2904/ LM2904A Description Pin Assignments
... currents result from large differential input voltages. The differential input voltage may be larger than V without damaging the device. Protection should be provided to prevent the input voltages from going negative more than -0.3 VDC (@ +25°C). An input clamp diode with a resistor to the IC input ...
... currents result from large differential input voltages. The differential input voltage may be larger than V without damaging the device. Protection should be provided to prevent the input voltages from going negative more than -0.3 VDC (@ +25°C). An input clamp diode with a resistor to the IC input ...
the employment of a single-phase capacitor induction motor for
... of the tested machine, the relatively weak remnant flux density does not induce currents in the rotor cage, so the self-excitation process can not be initiated. The detailed study shows that, for a resistive load, the short-shunt capacitor topology provides stable operation conditions up to the rate ...
... of the tested machine, the relatively weak remnant flux density does not induce currents in the rotor cage, so the self-excitation process can not be initiated. The detailed study shows that, for a resistive load, the short-shunt capacitor topology provides stable operation conditions up to the rate ...
ADD5205 数据手册DataSheet 下载
... (0.381 mm) per ampere. Place the inductor, output capacitors, and output diode as close to each other as possible. This helps reduce the EMI radiated by the power traces that is due to the high switching currents through them. This also reduces lead inductance and resistance, which in turn reduces n ...
... (0.381 mm) per ampere. Place the inductor, output capacitors, and output diode as close to each other as possible. This helps reduce the EMI radiated by the power traces that is due to the high switching currents through them. This also reduces lead inductance and resistance, which in turn reduces n ...
Temperature-Frequency Converter Using a Liquid Crystal Cell as a
... frequencies of the applied bias voltage (from 1 Hz to 104 Hz), the electrical behavior of the LC cell is a parallel circuit of a resistor and a capacitor [15]. The resistance and capacitance values depend on the cell dimensions and the LC material. The resistance value is high and approximately cons ...
... frequencies of the applied bias voltage (from 1 Hz to 104 Hz), the electrical behavior of the LC cell is a parallel circuit of a resistor and a capacitor [15]. The resistance and capacitance values depend on the cell dimensions and the LC material. The resistance value is high and approximately cons ...
PA_E - Yageo
... (4) TEMPERATURE COEFFICIENT OF RESISTANCE F = ± 100 ppm/°C M = ± 75ppm/°C E = ± 50ppm/°C ...
... (4) TEMPERATURE COEFFICIENT OF RESISTANCE F = ± 100 ppm/°C M = ± 75ppm/°C E = ± 50ppm/°C ...
FFPF60SA60DS STEALTH 8 A, 600 V, STEALTH Dual Series Diode
... The FFPF60SA60DS is STEALTH™ dual series diode with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their lo ...
... The FFPF60SA60DS is STEALTH™ dual series diode with soft recovery characteristics. It is silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their lo ...
CW-M SERIES AC POWER SOURCE
... inch chassis. This low profile design is also suitable for benchtop use. The CW Series models have three power ratings: 800 VA, 1250 VA, and 2500 VA. The switchmode, Power Factor Corrected (PFC) design efficiently delivers clean AC power. Voltage, current, and frequency settings are quickly adjusted ...
... inch chassis. This low profile design is also suitable for benchtop use. The CW Series models have three power ratings: 800 VA, 1250 VA, and 2500 VA. The switchmode, Power Factor Corrected (PFC) design efficiently delivers clean AC power. Voltage, current, and frequency settings are quickly adjusted ...
FJP5555 NPN Silicon Transistor FJP5555 — NPN Silicon T
... system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain cause the failure of the life support device or system, or to affect its life, and (c) whose failure to perform when properly used in safety or effectiveness. accordanc ...
... system whose failure to perform can be reasonably expected to intended for surgical implant into the body or (b) support or sustain cause the failure of the life support device or system, or to affect its life, and (c) whose failure to perform when properly used in safety or effectiveness. accordanc ...
SSRMAN-1P-CL S U M
... When an SCR or TRIAC is used to control an inductive load, the load current lags the mains voltage. When the device turns off at zero current, the rate of rise of the reapplied voltage can retrigger the device and produce half cycling and blown fuses. To limit this rate of rise and obtain reliable c ...
... When an SCR or TRIAC is used to control an inductive load, the load current lags the mains voltage. When the device turns off at zero current, the rate of rise of the reapplied voltage can retrigger the device and produce half cycling and blown fuses. To limit this rate of rise and obtain reliable c ...
Power MOSFET
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels.Compared to the other power semiconductor devices, for example an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to degree that the gate voltage needs to be higher than the voltage under control.The design of power MOSFETs was made possible by the evolution of CMOS technology, developed for manufacturing integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.