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Transcript
Section C The Bipolar Junction Transistor (BJT) (Chapter 4 of your text) Section C1: Introduction & Goals The bipolar junction transistor (BJT) is the first three-terminal active device that we’re going to discuss. In this section, we’re going to discover the basic principles of transistor operation – that is, how a voltage across or a current through two terminals of the transistor control the voltage or current of the third terminal. Using this characteristic, the transistor may be used as a controlled, or dependent, source. These characteristics allow the transistor to be used in a wide variety of applications, from amplification of signals, to analog and digital logic and memory circuits. Upon completion of this section of our studies in this section, our goals are for you to be familiar with: ¾ the basic structure of the BJT, its relationship to the semiconductor diode and the fundamental physical characteristics and modes of operation for this device; ¾ the distinction between large and small-signal operation and common device models for each operational range; ¾ analysis techniques for device operation under a variety of input conditions, to include: mathematical, graphical and computer simulation; ¾ fundamental operation and design considerations for single-stage BJT amplifier configurations; and ¾ biasing considerations and techniques for optimal single-stage amplifier output. I would like to caution you to be patient with yourself in this section. In many ways, this is the most difficult material we’re going to be dealing with – we’re going to go from our nice, safe world of twoterminal, mostly linear devices to an entity that is much more complex (and much more useful!). We’re going to start by going back to the physics of semiconductors, so if you’re uncomfortable you may want to review the discussions of pn junctions and biasing…yet one more time…