Download Syllabus

ECE 371 – Spring 2009
Room: ECE 310
M: 11 – 12:50
W&F: 11 – 11:50
Instructor:
Ganesh Balakrishnan, [email protected], 505-272-7970, Room 116B CHTM. (Go to
www.chtm.unm.edu for directions). Office hours: T and Th 10 to 12 AM or by appointment at
CHTM.
Textbook:
Semiconductor Physics and Devices, 3rd Edition, D.A. Neamen, ISBN 0-07-232107-5
SYLLABUS
Chapter 1 - Crystal Structure (3 hours): Space lattices, Bonding, Imperfections, Miller indices
and crystal growth.
Chapter 2 – Quantum mechanics (5 hours): Wave-particle duality, Schrödinger’s equation,
Barriers/Tunneling, Infinite potential well, Finite potential well, Hydrogen atom and the periodic
chart.
Chapter 3 – Quantum theory of solids (5 hours): Kronig-penny model (1D), Bloch’s theorem,
Brillouin zones, Effective mass, Holes, Real (3-D) band structure, Statistical mechanics (density
of states and Fermi functions).
Chapter 4 – Equilibrium carrier distribution (6 hours): Intrinsic material, Fermi levels, Extrinsic
material, Dopants, Charge neutrality, Position of the Fermi level.
Chapter 5 – Carrier transport (3 hours): Drift, Scattering, Mobility, Conductivity/resistivity,
Diffusion, Einstein relation
Chapter 6 – Non-equilibrium carrier populations (4 hours): Carrier generation and
recombination, Excess carriers, Carrier lifetime, Ambipolar transport, Shockley-Haynes
Experiment, Quasi-fermi levels
Chapter 7 – P-N Junctions (4 hours): Structure, Built-in (diffusion) potential, E fields, Space
charge width, Reverse bias, Junction capacitance.
Chapter 8 – Diode equation (7 hours): Current-voltage relationship, small signal model
(diffusion resistance and diffusion capacitance), Generation-recombination currents, Junction
breakdown, Charge storage and transients, Devices – Rectifiers, Light emitting diodes, Lasers,
Solar-cells, detectors and tunnel diodes.
Skip chapter 9.
Chapter 10 – Bipolar transistors (7 hours): Transistor action, Modes of operation, Minority
carrier distributions, Calculation of current components, Current gain, Non-ideal effects (early
effects and current crowding), Equivalent circuit models.
Chapter 11 – MOS transistor fundamentals (11 hours): Junction FETs, MOS capacitors
(Inversion, depletion layer thickness, flat-band voltage, threshold voltage, C-V characteristics),
MOSFET structure and I-V relationship.
HW policy: One HW every Monday, due the next Monday. 25% of final grade. Emphasis on
effort. Late HWs will not be accepted
Exams: 3 term exams (each 15% of final grade) and one final exam (30%). One term exam to be
a take-home.