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A pp li c a t i o n N o t e , R e v . 2 . 0 , O c t . 2 00 6 A p p li c a t i o n N o t e N o . 0 1 8 A L ow - N o i s e - A m pl i f i e r a t 9 0 0 M H z u s i n g S I E G E T B FP 4 20 BDTIC R F & P r o t e c ti o n D e v i c e s www.BDTIC.com/infineon BDTIC Edition 2006-10-27 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. www.BDTIC.com/infineon Application Note No. 018 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 Revision History: 2006-10-27, Rev. 2.0 Previous Version: 2000-07-27 Page Subjects (major changes since last revision) All Document layout change BDTIC Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Application Note 3 www.BDTIC.com/infineon Rev. 2.0, 2006-10-27 Application Note No. 018 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 1 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 This application note describes a low noise amplifier at 900 MHz using SIEMENS SIEGET®25 BFP420. The design emphasis has been on achieving low noise figure. A circuit description, schematic, PCB layout and components list are shown below together with measured performance data. Data at 0.9 GHz (3 V and 5 mA) Gain: 18 dB IP3out: NF: RLin-out: 10 dBm 1.35 dB >10 dB BDTIC +3V C5=100pF C6=10nF R1=100 Ohm C4=10pF R3=22k TrL6 C3=100pF C2=4.7pF RFout TrL5 C1=4.7pF RFin TrL1 R2=22 Ohm TrL4 Tr1=BFP420 TrL7 TrL2 TrL3 AN018_application.vsd Figure 1 Application This amplifier at 900 MHz has been realized by using microstrip lines as matching elements. The design offers a good compromise between high IIP3- values, low noise figure and high return loss. In order to optimize the design for a particular application please observe the following points: • • • • • The layout size can be reduced by using chip inductors instead of the microstrip lines TrL1 and TrL6 Improved stabilization behaviour versus temperature and reduced variation in amplifier performance due to the device‘s Beta (current gain) distribution can be achieved by using an active bias circuit. Such a circuit is available as a single device from Infineon - BCR400. For further information please refer to Application Note No.14. However, the resistors R1 and R3 are sufficient in most applications for stabilization purposes. This circuit is not optimized, for low noise figure, it is a first step to a good design. The measured figures include losses of SMA-connectors and the relatively high loss of the microstrip lines on the epoxy-board. The use of teflon material would provide an improvement of ≅ 0.1 dB. Resistor R2 is used to get higher RF-circuit-stability and return loss values at the output. It also affects the output intermodulation performance. Application Note 4 www.BDTIC.com/infineon Rev. 2.0, 2006-10-27 Application Note No. 018 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 scale 1:1 dim.: 25mm x 20mm 22 Ohm 4.7pF BDTIC 4.7pF BFP420 100pF 100pF 10nF plated thru holes d=0.5mm 100 Ohm 22kOhm Figure 2 10pF AN018_PCB_Layout.vsd PCB Layout and Component Placement Application Note 5 www.BDTIC.com/infineon Rev. 2.0, 2006-10-27 Application Note No. 018 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 Table 1 Component Component Value Unit Size Comment R1 100 Ω 0603 Bias / collector-resistance / VR1 ≅ 0.5 V R2 22 Ω 0603 To improve stability and output return loss R3 22 kΩ 0603 Bias / base-resistor C1 4.7 pF 0603 Input match C2 4.7 pF 0603 Output match C3 100 pF 0603 RF-short C4 10 pF 0603 Output match C5 100 pF 0603 RF-short BDTIC C6 10 nF Tr1 0603 RF-short SOT343 SIEGET® BFP420 TrL1 Input match and bias, w = 0.3 mm TrL2 Emitter-microstrip-line, w = 0.95 mm TrL3 Emitter-microstrip-line, w = 0.95 mm TrL4 Output match, w = 0.95 mm TrL5 Output match, w = 0.95 mm TrL6 Output match and DC-bias, w = 0.95 mm TrL7 Input match, w = 0.95 mm Substrate Application Note h = 0.5 mm, εr = 4.5 FR4 6 www.BDTIC.com/infineon Rev. 2.0, 2006-10-27 Application Note No. 018 A Low-Noise-Amplifier at 900 MHz using SIEGET BFP420 Measurements S21 LOG MAG. S12 10.000 dB/DIV LOG MAG. 10.000 dB/DIV 1 BDTIC 1 GHz 0.100000 S11 3.000000 10.000 dB/DIV LOG MAG. GHz 0.100000 S22 3.000000 10.000 dB/DIV LOG MAG. 1 1 GHz 0.100000 1 Figure 3 3.000000 0.100000 0.9 GHz GHz 3.000000 AN018_M easurem ents.vsd Measurements Application Note 7 www.BDTIC.com/infineon Rev. 2.0, 2006-10-27