Download MOSFETS SOT-363 Plastic-Encapsulate UM6K1N

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
UM6K1N
SOT-363
Dual N-channel MOSFET
FEATURES
1) Two 2SK3018 transistors in a package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
1
BDTIC
MARKING: K1
K1
Chip Size : 0.41mm*0.41mm
Equivalent circuit
(1)
Tr1
Source
(2)
Tr1
Gate
(3)
Tr2
Drain
(4)
Tr2
Source
(5)
Tr2
Gate
(6)
Tr1
Drain
‫ כ‬A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use. Use the
protection
circuit
when
rated
exceeded.
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
It is the same ratings for Tr1 and Tr2
Symbol
Parameter
Value
Units
VDS
Drain-Source voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current
0.1
A
PD
Power Dissipation
0.15
W
RθJA
Thermal Resistance from Junction to Ambient
833
℃ /W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
www.BDTIC.com/jcst
voltages
are
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
It is the same ratings for Tr1 and Tr2
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
VDS
VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
VDS =30V,VGS = 0V
1
µA
Gate –Source leakage current
IGSS
VGS =±20V, VDS = 0V
±2
µA
Gate Threshold Voltage
VGS(th)
VDS = 3V, ID =100µA
1.5
V
Drain-Source On-Resistance
RDS(on)
VGS = 4V, ID =10mA
8
Ω
VGS =2.5V,ID =1mA
13
Ω
Forward Transconductance
gFS
VDS =3V, ID = 10mA
30
V
0.8
20
mS
Dynamic Characteristics*
Input Capacitance
Ciss
13
pF
Output Capacitance
Coss
9
pF
Reverse Transfer Capacitance
Crss
4
pF
td(on)
15
ns
VGS =5V, VDD =5V,
35
ns
ID =10mA, Rg=10Ω, RL=500Ω
80
ns
80
ns
VDS =5V,VGS =0V,f =1MHz
BDTIC
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
*These parameters have no way to verify.
www.BDTIC.com/jcst
UM6K1N
Typical Characteristics
Output Characteristics
Transfer Characteristics
0.20
200
4.0V
Ta=25℃
100
0.15
(mA)
30
ID
VGS=2.5V
0.10
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS=3.0V
3.5V
Pulsed
0.05
10
3
1
VGS=2.0V
VDS=3V
0.3
Ta=25℃
BDTIC
VGS=1.5V
Pulsed
0.00
0.1
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
VDS
5
0
(V)
1
4
(V)
15
Ta=25℃
Ta=25℃
Pulsed
Pulsed
( )
( )
10
RDS(ON)
40
ON-RESISTANCE
RDS(ON)
3
VGS
RDS(ON) —— VGS
RDS(ON) —— ID
60
ON-RESISTANCE
2
GATE TO SOURCE VOLTAGE
20
VGS=2.5V
ID=100mA
5
ID=50mA
VGS=4V
0
0
3
1
10
DRAIN CURRENT
IS
100
30
——
ID
200
(mA)
0
5
VSD
200
VGS=0V
100
Ta=25℃
Pulsed
SOURCE CURRENT
IS (mA)
30
10
3
1
0.3
0.1
0.2
0.4
0.6
SOURCE TO DRAIN VOLTAGE
10
GATE TO SOURCE VOLTAGE
0.8
1.0
VSD (V)
www.BDTIC.com/jcst
15
VGS
(V)
20