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ISL9K460P3 8 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery trr = 17 ns (@ IF = 4 A) The ISL9K460P3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low Irr and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • SMPS FWD • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • Snubber Diode Package Symbol JEDEC TO-220AB K CATHODE (FLANGE) ANODE 2 CATHODE ANODE 1 A2 A1 Device Maximum Ratings (per leg) TC= 25°C unless otherwise noted Symbol VRRM VRWM VR IF(AV) Rating 600 Unit V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V Average Rectified Forward Current (TC = 155°C) 4 A Parameter Peak Repetitive Reverse Voltage Total Device Current (Both Legs) 8 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 8 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A Power Dissipation 58 W 10 mJ PD EAVL TJ, TSTG TL TPKG Avalanche Energy (0.5A, 80mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 -55 to 175 °C 300 260 °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 1 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode November 2013 Part Number ISL9K460P3 Top Mark Package ISL9K460P3 Packing Method Reel Size TO-220 Electrical Characteristics (per leg) Symbol Tube Tape Width Quantity N/A 50 N/A TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10 V, IF = 0 A - 19 - pF IF = 1 A, diF/dt = 100 A/µs, VR = 30 V - 17 20 ns IF = 4 A, diF/dt = 100 A/µs, VR = 30 V IF = 4 A, diF/dt = 200 A/µs, VR = 390 V, TC = 25°C - 19 22 ns - 17 - ns - 2.6 - A - 22 - nC ns VR = 600 V On State Characteristics VF Instantaneous Forward Voltage IF = 4 A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr Reverse Recovery Time trr Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr trr Reverse Recovery Charge Reverse Recovery Time S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr dIM/dt Reverse Recovery Charge IF = 4 A, diF/dt = 200 A/µs, VR = 390 V, TC = 125°C IF = 4 A, diF/dt = 400 A/µs, VR = 390 V, TC = 125°C Maximum di/dt during tb - 77 - - 4.2 - - 2.8 - A - 100 - nC ns - 54 - - 3.5 - - 4.3 - A 110 - nC 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 2.6 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 2 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode Package Marking and Ordering Information 8 600 175oC 175oC 25oC 6 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 7 150oC 5 4 o 100 C 3 2 150oC 100 125oC 100oC 10 75oC 1 25oC 1 0.1 100 0 0 0.5 1 1.5 2 2.5 3 200 VF, FORWARD VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 500 600 120 VR = 390 V, TJ = 125oC 80 VR = 390 V, TJ = 125oC tb AT diF/dt = 200 A/µs, 500 A/µs, 800 A/µs 100 t, RECOVERY TIMES (ns) 70 t, RECOVERY TIMES (ns) 400 Figure 2. Reverse Current vs Reverse Voltage 90 60 50 40 30 tbAT IF = 8 A, 4 A, 2 A 80 60 40 20 ta AT IF = 8 A, 4 A, 2 A 20 10 ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs 0 1 2 3 4 5 6 7 0 100 8 200 IRRM , MAX REVERSE RECOVERY CURRENT (A) 8 VR = 390 V, TJ = 125oC diF/dt = 800 A/µs 6 5 diF/dt = 500 A/µs 4 3 diF/dt = 200 A/µs 2 1 2 3 4 5 6 7 8 500 600 700 800 900 1000 Figure 5. Maximum Reverse Recovery Current vs Forward Current 8 VR = 390 V, TJ = 125oC 7 IF = 8 A 6 IF = 4 A IF = 2 A 5 4 3 2 1 100 200 300 400 500 600 700 800 900 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) IF, FORWARD CURRENT (A) ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 400 Figure 4. ta and tb Curves vs diF/dt Figure 3. ta and tb Curves vs Forward Current 7 300 diF/dt, CURRENT RATE OF CHANGE (A/µs) IF, FORWARD CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A) 300 VR , REVERSE VOLTAGE (V) Figure 6. Maximum Reverse Recovery Current vs diF/dt 3 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode Typical Performance Curves 180 VR = 390 V, TJ = 125oC 5 IF = 4 A 4 IF = 8 A 3 IF = 2 A 2 1 100 200 300 400 500 600 700 800 900 VR = 390 V,TJ = 125oC QRR, REVERSE RECOVERY CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 6 140 IF = 4 A 120 100 IF = 2 A 80 60 100 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) 300 400 500 600 700 800 900 1000 Figure 8. Reverse Recovery Charge vs diF/dt 1800 IF(AV) , AVERAGE FORWARD CURRENT (A) 5 1600 CJ , JUNCTION CAPACITANCE (pF) 200 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs diF/dt 1400 1200 1000 800 600 400 200 0 0.03 1.0 10 3 2 1 150 100 155 160 165 170 175 TC , CASE TEMPERATURE (OC) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 4 0 0.1 VR , REVERSE VOLTAGE (V) ZqJA, NORMALIZED THERMAL IMPEDANCE IF = 8 A 160 Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 4 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE diF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 0.5A L = 80mH R < 0.1Ω VDD = 200V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD IL Q1 VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms 5 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode Test Circuit and Waveforms ISL9K460P3 — STEALTH™ Dual Diode Mechanical Dimensions Figure 16. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003. ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 6 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2001 Fairchild Semiconductor Corporation ISL9K460P3 Rev.C1 7 www.fairchildsemi.com ISL9K460P3 — STEALTH™ Dual Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® BitSiC™ Global Power ResourceSM PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® ® STEALTH™ MillerDrive™ Fairchild Semiconductor UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ ® SuperSOT™-3 mWSaver FACT UniFET™ SuperSOT™-6 OptoHiT™ FAST® ® VCX™ SuperSOT™-8 OPTOLOGIC FastvCore™ ® ® VisualMax™ OPTOPLANAR SupreMOS FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™