Download ISL9K460P3 8 A, 600 V, STEALTH II Diode —

ISL9K460P3
8 A, 600 V, STEALTHTM II Diode
Features
Description
• Stealth Recovery trr = 17 ns (@ IF = 4 A)
The ISL9K460P3 is a STEALTH™ dual diode optimized
for low loss performance in high frequency hard switched
applications. The STEALTH™ family exhibits low reverse
recovery current (Irr) and exceptionally soft recovery
under typical operating conditions. This device is
intended for use as a free wheeling or boost diode in
power supplies and other power switching applications.
The low Irr and short ta phase reduce loss in switching
transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode
may be operated without the use of additional snubber
circuitry. Consider using the STEALTH™ diode with an
SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• SMPS FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
Symbol
JEDEC TO-220AB
K
CATHODE
(FLANGE)
ANODE 2
CATHODE
ANODE 1
A2
A1
Device Maximum Ratings (per leg) TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
Rating
600
Unit
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
Average Rectified Forward Current (TC = 155°C)
4
A
Parameter
Peak Repetitive Reverse Voltage
Total Device Current (Both Legs)
8
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
8
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
50
A
Power Dissipation
58
W
10
mJ
PD
EAVL
TJ, TSTG
TL
TPKG
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
-55 to 175
°C
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
1
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
November 2013
Part Number
ISL9K460P3
Top Mark
Package
ISL9K460P3
Packing Method Reel Size
TO-220
Electrical Characteristics (per leg)
Symbol
Tube
Tape Width
Quantity
N/A
50
N/A
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
IR
Instantaneous Reverse Current
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
TC = 25°C
-
2.0
2.4
V
TC = 125°C
-
1.6
2.0
V
VR = 10 V, IF = 0 A
-
19
-
pF
IF = 1 A, diF/dt = 100 A/µs, VR = 30 V
-
17
20
ns
IF = 4 A, diF/dt = 100 A/µs, VR = 30 V
IF = 4 A,
diF/dt = 200 A/µs, VR = 390 V,
TC = 25°C
-
19
22
ns
-
17
-
ns
-
2.6
-
A
-
22
-
nC
ns
VR = 600 V
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 4 A
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Reverse Recovery Current
Qrr
trr
Reverse Recovery Charge
Reverse Recovery Time
S
Softness Factor (tb/ta)
Irr
Reverse Recovery Current
Qrr
dIM/dt
Reverse Recovery Charge
IF = 4 A,
diF/dt = 200 A/µs,
VR = 390 V,
TC = 125°C
IF = 4 A,
diF/dt = 400 A/µs,
VR = 390 V,
TC = 125°C
Maximum di/dt during tb
-
77
-
-
4.2
-
-
2.8
-
A
-
100
-
nC
ns
-
54
-
-
3.5
-
-
4.3
-
A
110
-
nC
500
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
2.6
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
2
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
Package Marking and Ordering Information
8
600
175oC
175oC
25oC
6
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
7
150oC
5
4
o
100 C
3
2
150oC
100
125oC
100oC
10
75oC
1
25oC
1
0.1
100
0
0
0.5
1
1.5
2
2.5
3
200
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500
600
120
VR = 390 V, TJ = 125oC
80
VR = 390 V, TJ = 125oC
tb AT diF/dt = 200 A/µs, 500 A/µs, 800 A/µs
100
t, RECOVERY TIMES (ns)
70
t, RECOVERY TIMES (ns)
400
Figure 2. Reverse Current vs Reverse Voltage
90
60
50
40
30
tbAT IF = 8 A, 4 A, 2 A
80
60
40
20
ta AT IF = 8 A, 4 A, 2 A
20
10
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
0
1
2
3
4
5
6
7
0
100
8
200
IRRM , MAX REVERSE RECOVERY CURRENT (A)
8
VR = 390 V, TJ = 125oC
diF/dt = 800 A/µs
6
5
diF/dt = 500 A/µs
4
3
diF/dt = 200 A/µs
2
1
2
3
4
5
6
7
8
500
600
700
800
900
1000
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
8
VR = 390 V, TJ = 125oC
7
IF = 8 A
6
IF = 4 A
IF = 2 A
5
4
3
2
1
100
200
300
400
500
600
700
800
900
1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
IF, FORWARD CURRENT (A)
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
400
Figure 4. ta and tb Curves vs diF/dt
Figure 3. ta and tb Curves vs Forward Current
7
300
diF/dt, CURRENT RATE OF CHANGE (A/µs)
IF, FORWARD CURRENT (A)
IRRM , MAX REVERSE RECOVERY CURRENT (A)
300
VR , REVERSE VOLTAGE (V)
Figure 6. Maximum Reverse Recovery Current
vs diF/dt
3
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
Typical Performance Curves
180
VR = 390 V, TJ = 125oC
5
IF = 4 A
4
IF = 8 A
3
IF = 2 A
2
1
100
200
300
400
500
600
700
800
900
VR = 390 V,TJ = 125oC
QRR, REVERSE RECOVERY CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
6
140
IF = 4 A
120
100
IF = 2 A
80
60
100
1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
300
400
500
600
700
800
900
1000
Figure 8. Reverse Recovery Charge vs diF/dt
1800
IF(AV) , AVERAGE FORWARD CURRENT (A)
5
1600
CJ , JUNCTION CAPACITANCE (pF)
200
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor
vs diF/dt
1400
1200
1000
800
600
400
200
0
0.03
1.0
10
3
2
1
150
100
155
160
165
170
175
TC , CASE TEMPERATURE (OC)
Figure 9. Junction Capacitance vs Reverse Voltage
1.0
4
0
0.1
VR , REVERSE VOLTAGE (V)
ZqJA, NORMALIZED
THERMAL IMPEDANCE
IF = 8 A
160
Figure 10. DC Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 11. Normalized Maximum Transient Thermal Impedance
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
4
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
CURRENT
SENSE
diF
trr
dt
ta
tb
0
+
VGE
-
MOSFET
t1
0.25 IRM
VDD
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 0.5A
L = 80mH
R < 0.1Ω
VDD = 200V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
IL
Q1
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
IL
I V
t1
t2
t
Figure 15. Avalanche Current and
Voltage Waveforms
5
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
Test Circuit and Waveforms
ISL9K460P3 — STEALTH™ Dual Diode
Mechanical Dimensions
Figure 16. TO-220 3L - TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003.
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
6
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2001 Fairchild Semiconductor Corporation
ISL9K460P3 Rev.C1
7
www.fairchildsemi.com
ISL9K460P3 — STEALTH™ Dual Diode
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