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BFP196W
Low Noise Silicon Bipolar RF Transistor
• For low noise, low distortion broadband
3
amplifiers in antenna and telecommunications
2
4
systems up to 1.5 GHz at collector currents from
1
20 mA to 80 mA
• Power amplifier for DECT and PCN systems
• fT = 7.5 GHz, NFmin = 1.3 dB at 900 MHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
BDTIC
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP196W
Marking
Pin Configuration
RIs
1=E 2=C 3=E 4=B -
Package
-
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
150
Base current
IB
15
Total power dissipation1)
Ptot
700
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
V
mA
TS ≤ 69°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
115
K/W
1T
S is measured on the collector lead at the soldering point to the pcb
2For the definition of R
thJS please refer to Application Note AN077 (Thermal
1
Resistance Calculation)
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2014-04-04
BFP196W
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
-
-
100
µA
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
ICES
VCE = 20 V, VBE = 0
BDTIC
Collector-base cutoff current
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 50 mA, VCE = 8 V, pulse measured
2
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2014-04-04
BFP196W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
fT
5
7.5
-
Ccb
-
0.86
1.3
Cce
-
0.4
-
Ceb
-
3.9
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
BDTIC
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.3
-
f = 1.8 GHz
-
2.3
-
IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
-
19
-
f = 1.8 GHz
-
12.5
-
Power gain, maximum available1)
Gma
|S21e|2
Transducer gain
dB
IC = 50 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
-
13
-
f = 1.8 GHz
-
7
-
IP3
-
32
-
P-1dB
-
19
-
Third order intercept point at output2)
dBm
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1dB Compression point at output
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 0.9 GHz
1/2
ma = |S21 / S12| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
1G
3
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2014-04-04
BFP196W
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
800
mW
K/W
RthJS
Ptot
600
500
10 2
400
BDTIC
300
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
200
100
0
0
20
40
60
80
100
120 °C
10 0 -7
10
150
10
-6
10
-5
10
-4
TS
10
-3
10
-2
s
10
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
P totmax/PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
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2014-04-04
0
Package SOT343
BFP196W
BDTIC
5
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2014-04-04
BFP196W
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
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