Download BFS483

BFS483
Low Noise Silicon Bipolar RF Transistor
• For low noise, high-gain broadband amplifiers at
4
5
6
collector currents from 2 mA to 30 mA
• fT = 8 GHz, NFmin = 0.9 dB at 900 MHz
1
2
3
• Two (galvanic) internal isolated Transistor in
one package
• For orientation in reel see package
information below
• Pb-free (RoHS compliant) and halogen-free package
BDTIC
with visible leads
• Qualification report according to AEC-Q101 available
C1
E2
B2
6
5
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFS483
Marking
RHs
1=B
Pin Configuration
2=E
3=C
1
4=B
5=E
Package
6=C
www.BDTIC.com/infineon
SOT363
2013-07-25
BFS483
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
65
Base current
IB
5
Total power dissipation1)
Ptot
Unit
V
mA
450
mW
TS ≤ 40 °C
BDTIC
Junction temperature
TJ
150
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
Value
Unit
245
K/W
Values
Unit
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
70
100
140
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 15 mA, VCE = 8 V, pulse measured
1T
S is measured on the collector lead at the soldering point to the pcb
2For the definition of R
thJS please refer to Application Note AN077 (Thermal
2
Resistance Calculation)
www.BDTIC.com/infineon
2013-07-25
BFS483
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
6
8
-
Ccb
-
0.34
0.54
Cce
-
0.13
-
Ceb
-
1.1
-
AC Characteristics (verified by random sampling)
Transition frequency
GHz
IC = 25 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
BDTIC
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
0.9
-
-
1.4
-
Gms
-
19
-
dB
Gma
-
12.5
-
dB
IC = 5 mA, VCE = 8 V, ZS = ZSopt ,
f = 1.8 GHz
Power gain, maximum stable1)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
Power gain, maximum available2)
IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 1.8 GHz
|S21e|2
Transducer gain
dB
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 900 MHz
-
15.5
-
IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,
f = 1.8 MHz
-
10
-
1G
ms = |S21 / S12|
1/2
ma = |S21e / S12e | (k-(k²-1) )
2G
3
www.BDTIC.com/infineon
2013-07-25
BFS483
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
500
mW
400
K/W
RthJS
Ptot
350
300
10 2
250
BDTIC
0.5
0.2
0. 1
0.05
0.2
0.1
0.005
D=0
200
150
100
50
0
0
20
40
60
80
100
120 °C
10 1 -7
10
150
10
-6
10
-5
10
-4
TS
10
-3
10
-2
s
10
tp
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp )
P totmax/PtotDC
10 2
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
www.BDTIC.com/infineon
2013-07-25
0
Package SOT363
BFS483
BDTIC
5
www.BDTIC.com/infineon
2013-07-25
BFS483
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
BDTIC
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
6
www.BDTIC.com/infineon
2013-07-25