Download SOT-23-6L Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3443
P-Channel 20-V(D-S) MOSFET
SOT-23-6L
FEATURE
z Fast Switching Speed
z Low Gate Charge
z High Performance Trench Technology for extremely Low RDS(on)
1. GATE
2. DRAIN
D
D
3. SOURCE
S
D
Description
This P-Channel MOSFET is produced using advanced PowerTrench
process that has been especially tailored to minimize on-state resistance
and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation
In a very small footprint for applications where the larger packages are impractical.
D
BDTIC
1
6
2
5
3
4
G
MARKING:
R43
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
Continuous Gate-Source Voltage
VGS
±8
ID
-4
A
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
V
PD
0.35
W
RθJA
357
℃/W
Tj
150
Tstg
-55 ~+150
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℃
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =-250µA
-20
V
Gate-body leakage
IGSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current
IDSS
VDS =-16V, VGS =0V
-1.0
µA
-1.50
V
On characteristics
Gate-threshold voltage
VGS(th)
Static drain-source on-resistance (note 1)
RDS(on)
Forward transconductance (note 1)
gfs
VDS =VGS, ID =-0.25mA
-0.40
VGS =-4.5V, ID =-4A
0.065
VGS =-2.5V, ID =-3.2A
0.10
VDS =-5V, ID =-4A
8
Ω
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
640
BDTIC
VDS =-10,VGS =0V, f=1MHz
Output capacitance
Coss
Reverse transfer capacitance
Crss
90
td(on)
20
pF
180
Switching characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
tr
Turn-off delay time (note 1,2)
td(off)
Fall time (note 1,2)
VGS=-4.5V, VDD=-10V,
30
ID =-1A,RGEN=6Ω
42
tf
ns
55
Drain-source body diode characteristics
Body diode forward voltage (note 1)
VSD
IS=-1.3A, VGS = 0V
Notes:
1.
2.
Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
These parameters have no way to verify.
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-1.2
V
Typical Characteristics
Output Characteristics
-20
Transfer Characteristics
-5
VGS=-4.5V,-4.0V,-3.5V,-3.0V,-2.5V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
VGS=-2.0V
-4
ID
ID
(A)
(A)
-16
DRAIN CURRENT
-12
DRAIN CURRENT
CJL3443
-8
VGS=-1.5V
-4
-3
-2
-1
BDTIC
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
100
VDS
-0
-0.0
-4
-0.5
-1.0
-1.5
GATE TO SOURCE VOLTAGE
(V)
ID
RDS(ON) ——
500
VGS
-2.0
(V)
VGS
Ta=25℃
Ta=25℃
Pulsed
400
(mΩ)
80
RDS(ON)
VGS=-2.5V
60
VGS=-4.5V
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
Pulsed
40
20
0
200
ID=-4.0A
100
-0
-4
-8
-12
DRAIN CURRENT
ID
-16
-20
(A)
0
-0
-2
Ta=25℃
Pulsed
SOURCE CURRENT
IS (A)
-3
-1
-0.3
-0.1
-0.03
-0.01
-3E-3
-1E-3
-0.0
-0.4
-0.8
SOURCE TO DRAIN VOLTAGE
-4
GATE TO SOURCE VOLTAGE
IS —— VSD
-20
-10
300
-1.2
-1.6
VSD (V)
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-6
VGS
(V)
-8