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Download TO-251S Plastic-Encapsulate MOSFETS CJD04N60B
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits. 1. GATE 2. DRAIN 3. SOURCE BDTIC FEATURE z High Current Rating z z z z z Lower Rds(on) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 4.0 Pulsed Drain Current IDM 16 Single Pulsed Avalanche Energy (note1) EAS 260 mJ Thermal Resistance from Junction to Ambient RθJA 100 ℃/W Junction Temperature TJ 150 Storage Temperature Range TSTG -55 ~+150 TL 260 Maximum Lead Temperure for Soldering Purposes , 1/8”from Case for 5 Seconds V A ℃ A-3,Mar,2014 www.BDTIC.com/jcst Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 600 V VDS =600V, VGS =0V Zero gate voltage drain current IDSS 25 VDS=0.8xRatedV(BR)DSS,VGS=0V, 100 TJ=125℃ IGSS VDS =0V, VGS =±30V Gate-threshold voltage VGS(th) VDS =VGS, ID =250µA Static drain-source on-resistance RDS(on) VGS =10V, ID =2.0A gfs VDS =50V, ID =2.0A Gate-body leakage current µA ±100 nA 4.0 V 3.0 Ω On characteristics (note2) Forward transconductance 2.0 2.3 2.5 S Dynamic characteristics (note 3) 1. BDTIC 2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%. 3. Guaranteed by design, not subject to production Input capacitance Ciss 760 Output capacitance Coss Reverse transfer capacitance Crss 20 td(on) 20 VDS =25V,VGS =0V,f =1MHz 180 pF Switching characteristics (note 2,3) Turn-on delay time Turn-on rise time tr Turn-off delay time td(off) Turn-off fall time tf Total gate charge QG Gate to source charge QGS Gate to drain “miller” charge QGD VDD=300V, VGS=10V, 10 RG=9.1Ω, ID =4.0A 40 ns 20 5.0 VDS =480V ,VGS=10V,ID=4.0A, 10 2.7 nC 2.0 Drain-Source Diode Characteristics Drain-source diode forward voltage(note2) Continuous drain-source diode forward current(note4) Pulsed drain-source diode forward current VSD VGS = 0V, IS =4.0A 1.5 V IS 10 A ISM 40 A Notes : L=30mH,IL=4A, VDD=100V,VGS=10V, RG=25Ω,Starting TJ=25℃. 4. Surface mounted on FR4 board, t≤10s A-3,Mar,2014 www.BDTIC.com/jcst Typical Characteristics CJD04N60B Transfer Characteristics Output Characteristics 5.0 1.0 Pulsed VDS=10V VGS= 10V 4.5 VGS=8V Pulsed 0.8 (A) VGS=5.5V 3.0 DRAIN CURRENT DRAIN CURRENT ID 3.5 ID (A) 4.0 2.5 2.0 VGS=5V 1.5 1.0 0.6 Ta=100℃ Ta=25℃ 0.4 0.2 VGS=4.5V 0.5 0.0 0.0 0 5 10 15 20 DRAIN TO SOURCE VOLTAGE 25 VDS 30 0 1 (V) 2 3 4 5 GATE TO SOURCE VOLTAGE VGS 6 7 (V) BDTIC RDS(ON)—— VGS RDS(ON) —— ID 4.0 10 Ta=25℃ 3.5 Pulsed ID=2A 9 Pulsed ( Ω) RDS(ON) VGS=10V ON-RESISTANCE ( Ω) 2.5 ON-RESISTANCE RDS(ON) 8 3.0 2.0 1.5 1.0 7 6 Ta=100℃ 5 4 3 2 Ta=25℃ 0.5 1 0.0 0.1 0 0.5 1.0 1.5 2.0 2.5 DRAIN CURRENT ID 3.0 3.5 4.0 3 (A) 4 5 6 7 8 GATE TO SOURCE VOLTAGE VGS 9 10 (V) Threshold Voltage IS —— VSD 5.0 4 Pulsed (V) Ta=100℃ Ta=25℃ 0.1 4.0 VTH 1 3.5 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) 4.5 3.0 ID=250uA 2.5 2.0 1.5 1.0 0.5 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 VSD (V) 1.4 1.6 0.0 25 50 75 JUNCTION TEMPERATURE www.BDTIC.com/jcst 100 TJ 125 (℃ ) $3,Mar,2014