Download TO-251S Plastic-Encapsulate MOSFETS CJD04N60B

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B
600V N-Channel Power MOSFET
TO-251S
General Description
This advanced high voltage MOSFET is designed to wighstand high
energy in the avalanche mode and switch efficiently.This new high energy
device also offers a drain-to-source diode wigh fast recovery time.Desighed
for high voltage,high speed switching applications such as power
supplies,converters,power motor controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
BDTIC
FEATURE
z
High Current Rating
z
z
z
z
z
Lower Rds(on)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current
ID
4.0
Pulsed Drain Current
IDM
16
Single Pulsed Avalanche Energy (note1)
EAS
260
mJ
Thermal Resistance from Junction to Ambient
RθJA
100
℃/W
Junction Temperature
TJ
150
Storage Temperature Range
TSTG
-55 ~+150
TL
260
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
V
A
℃
A-3,Mar,2014
www.BDTIC.com/jcst
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS
VGS = 0V, ID =250µA
600
V
VDS =600V, VGS =0V
Zero gate voltage drain current
IDSS
25
VDS=0.8xRatedV(BR)DSS,VGS=0V,
100
TJ=125℃
IGSS
VDS =0V, VGS =±30V
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
Static drain-source on-resistance
RDS(on)
VGS =10V, ID =2.0A
gfs
VDS =50V, ID =2.0A
Gate-body leakage current
µA
±100
nA
4.0
V
3.0
Ω
On characteristics (note2)
Forward transconductance
2.0
2.3
2.5
S
Dynamic characteristics (note 3)
1.
BDTIC
2.
Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3.
Guaranteed by design, not subject to production
Input capacitance
Ciss
760
Output capacitance
Coss
Reverse transfer capacitance
Crss
20
td(on)
20
VDS =25V,VGS =0V,f =1MHz
180
pF
Switching characteristics (note 2,3)
Turn-on delay time
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
Total gate charge
QG
Gate to source charge
QGS
Gate to drain “miller” charge
QGD
VDD=300V, VGS=10V,
10
RG=9.1Ω, ID =4.0A
40
ns
20
5.0
VDS =480V ,VGS=10V,ID=4.0A,
10
2.7
nC
2.0
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note2)
Continuous drain-source diode forward
current(note4)
Pulsed drain-source diode forward current
VSD
VGS = 0V, IS =4.0A
1.5
V
IS
10
A
ISM
40
A
Notes :
L=30mH,IL=4A, VDD=100V,VGS=10V, RG=25Ω,Starting TJ=25℃.
4. Surface mounted on FR4 board, t≤10s
A-3,Mar,2014
www.BDTIC.com/jcst
Typical Characteristics
CJD04N60B
Transfer Characteristics
Output Characteristics
5.0
1.0
Pulsed
VDS=10V
VGS= 10V
4.5
VGS=8V
Pulsed
0.8
(A)
VGS=5.5V
3.0
DRAIN CURRENT
DRAIN CURRENT
ID
3.5
ID
(A)
4.0
2.5
2.0
VGS=5V
1.5
1.0
0.6
Ta=100℃
Ta=25℃
0.4
0.2
VGS=4.5V
0.5
0.0
0.0
0
5
10
15
20
DRAIN TO SOURCE VOLTAGE
25
VDS
30
0
1
(V)
2
3
4
5
GATE TO SOURCE VOLTAGE
VGS
6
7
(V)
BDTIC
RDS(ON)—— VGS
RDS(ON) —— ID
4.0
10
Ta=25℃
3.5
Pulsed
ID=2A
9
Pulsed
( Ω)
RDS(ON)
VGS=10V
ON-RESISTANCE
( Ω)
2.5
ON-RESISTANCE
RDS(ON)
8
3.0
2.0
1.5
1.0
7
6
Ta=100℃
5
4
3
2
Ta=25℃
0.5
1
0.0
0.1
0
0.5
1.0
1.5
2.0
2.5
DRAIN CURRENT
ID
3.0
3.5
4.0
3
(A)
4
5
6
7
8
GATE TO SOURCE VOLTAGE
VGS
9
10
(V)
Threshold Voltage
IS —— VSD
5.0
4
Pulsed
(V)
Ta=100℃
Ta=25℃
0.1
4.0
VTH
1
3.5
THRESHOLD VOLTAGE
SOURCE CURRENT
IS (A)
4.5
3.0
ID=250uA
2.5
2.0
1.5
1.0
0.5
0.01
0.0
0.2
0.4
0.6
0.8
1.0
SOURCE TO DRAIN VOLTAGE
1.2
VSD (V)
1.4
1.6
0.0
25
50
75
JUNCTION TEMPERATURE
www.BDTIC.com/jcst
100
TJ
125
(℃ )
$3,Mar,2014