Download MOSFETS SOT-323 Plastic-Encapsulate 2SK3018

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
2SK3018
N-channel MOSFET
SOT-323
FEATURES
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Low on-resistance
z
Fast switching speed
z
Low voltage drive makes this device ideal for portable equipment
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Easily designed drive circuits
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Easy to parallel
3
1
2
1. GATE
2. SOURCE
3. DRAIN
Marking: KN
BDTIC
Equivalent circuit
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Value
Units
Drain-Source voltage
30
V
Gate-Source Voltage
±20
V
Continuous Drain Current
0.1
A
Power Dissipation
0.2
W
Junction Temperature
150
℃
Storage Temperature
-55-150
℃
Symbol
Parameter
VDS
VGS
ID
PD
TJ
Tstg
RθJA
Thermal Resistance from Junction to Ambient
625
℃ /W
MOSFET ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current
IDSS
VDS =30V,VGS = 0V
0.2
µA
Gate –Source leakage current
IGSS
VGS =±20V, VDS = 0V
±2
µA
Gate Threshold Voltage
VGS(th)
VDS = 3V, ID =100µA
1.5
V
Drain-Source On-Resistance
RDS(on)
VGS = 4V, ID =10mA
8
Ω
VGS =2.5V,ID =1mA
13
Ω
Forward Transconductance
gFS
VDS =3V, ID = 10mA
30
V
0.8
mS
20
Dynamic Characteristics*
Input Capacitance
Ciss
13
pF
Output Capacitance
Coss
9
pF
Reverse Transfer Capacitance
Crss
4
pF
td(on)
15
ns
VGS =5V, VDD =5V,
35
ns
ID =10mA, Rg=10Ω, RL=500Ω
80
ns
80
ns
VDS =5V,VGS =0V,f =1MHz
Switching Characteristics*
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
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*These parameters have no way to verify.
Typical Characteristics
2SK3018
Transfer Characteristics
Output Characteristics
0.20
Ta=25℃
VGS=3.0V
4.0V
Pulsed
200
100
3.5V
0.15
ID
VGS=2.5V
0.10
0.05
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
(mA)
30
VGS=2.0V
10
3
1
VDS=3V
0.3
Ta=25℃
BDTIC
VGS=1.5V
0.00
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
60
VDS
Pulsed
0.1
5
0
1
2
GATE TO SOURCE VOLTAGE
(V)
3
VGS
RDS(ON) —— VGS
—— ID
15
Ta=25℃
Ta=25℃
( Ω)
Pulsed
ON-RESISTANCE
ON-RESISTANCE
10
RDS(ON)
40
RDS(ON)
( Ω)
Pulsed
20
ID=100mA
5
ID=50mA
VGS= 2.5V
0
VGS= 4V
1
10
3
100
30
DRAIN CURRENT
ID
200
(mA)
0
0
5
100
VGS=0V
Ta=25℃
IS (mA)
Pulsed
30
10
3
1
0.3
0.1
0.2
0.4
0.6
SOURCE TO DRAIN VOLTAGE
10
GATE TO SOURCE VOLTAGE
IS —— VSD
200
SOURCE CURRENT
4
(V)
0.8
1.0
VSD (V)
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15
VGS
(V)
20