Download CJ5853DC DFNWB3

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3×2-08L-B Power Management MOSFETs-Schottky
CJ5853DC P-channel MOSFET and Schottky Barrier Diode
DFNWB3×2-08L-B
FEATURES
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Independent Pinout to Each Device to Ease Circuit Design
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Ultra low VF
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Including a CJ2301 MOSFET and a MBR0520 Schottky
(independently) in a package
BDTIC
APPLICATIONS
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Li-lon Battery Charging
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High Side DC-DC Conversion Circuits
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High Side Drive for Small Brushless DC Motors
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Power Management in Portable，Battery Powered Products
MARKING:
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
P-MOSFET
VDS
Drain-Source Voltage
-20
V
VGS
Gate-Source Voltage
±8
V
Continuous Drain Current
-2.7
A
Pulse Drain Current
-10
A
Peak Repetitive Reverse Voltage
20
V
VR
DC Blocking Voltage
20
V
IO
Average Rectified Forward Current
1
A
Power Dissipation
1.1
W
Thermal Resistance from Junction to Ambient
114
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
260
℃
ID
IDM*
Schottky Barrier Diode
VRRM
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
*Repetitive rating：Pluse width limited by junction temperature.
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ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
P-MOSFET
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR)DSS
VGS =0V, ID=-250µA
Zero gate voltage drain current
IDSS
VDS =-16V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±8V, VDS = 0V
±100
nA
Gate threshold voltage
VGS(th)
Drain-source on-resistance(note1)
RDS(on)
VDS =VGS, ID =-250µA
-20
V
-0.45
V
VGS =-4.5V, ID =-2.7A
110
mΩ
VGS =-2.5V, ID =-2.2A
160
mΩ
VGS =-1.8V, ID =-1A
240
mΩ
-1.2
V
Forward transconductance(note1)
gFS
VDS=-10V,ID=-2.7A
Diode forward voltage(note1)
VSD
IS=-0.9A, VGS = 0V
7
S
DYNAMIC PARAMETERS (note 2)
BDTIC
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
300
pF
150
pF
Crss
50
pF
td(on)
25
ns
VGS=-4.5V,VDD=-10V,
45
ns
RL=10Ω,RG=6Ω, ID=-1A
45
ns
VDS =-10V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 2)
Turn-on delay time
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
40
ns
Total Gate Charge
Qg
6.5
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =-10V,VGS =-4.5V,
ID =-2.7A
1.4
nC
0.65
nC
SCHOTTKY BARRIER DIODE
Forward voltage
VF
IF=0.5A
0.48
V
Reverse current
IR
VR=20V
100
µA
Junction capacitance
Cj
VR=10V,f=1MHz
Note:
1.Pulse test: pulse width =300μs, duty cycle≤ 2%
2.These parameters have no way to verify.
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41
pF
Typical Characteristics
CJ5853DC
PMOS
Output Characteristics
Transfer Characteristics
-10
-10
VGS=-2.5V,-3.5V,-4.5V,
Ta=25℃
Ta=25℃
Pulsed
Pulsed
-8
-8
(A)
VGS=-1.5V
ID
-4
-6
DRAIN CURRENT
ID
-6
DRAIN CURRENT
(A)
VGS=-2.0V
-4
-2
-2
BDTIC
VGS=-1.0V
-0
-0
-1
-2
-3
DRAIN TO SOURCE VOLTAGE
RDS(ON)
——
VDS
-0
-0.0
-4
(V)
-0.5
-1.0
-1.5
GATE TO SOURCE VOLTAGE
ID
RDS(ON)
150
——
-2.0
VGS
-2.5
(V)
VGS
250
Ta=25℃
Ta=25℃
Pulsed
Pulsed
200
(mΩ)
RDS(ON)
VGS=-2.5V
90
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
(mΩ)
120
VGS=-4.5V
60
30
150
100
ID=-2.8A
50
0
-0
-2
-4
-6
DRAIN CURRENT
IS
——
ID
-8
-10
(A)
-0
-2
VSD
-10
Ta=25℃
Pulsed
SOURCE CURRENT
IS
(A)
-1
-0.1
-0.01
-1E-3
-0.2
-0.4
-0.6
-0.8
SOURCE TO DRAIN VOLTAGE
-1.0
VSD
-4
GATE TO SOURCE VOLTAGE
-1.2
(V)
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-6
VGS
(V)
-8
Typical Characteristics
CJ5853DC
Diode
Foward Characteristics
1000
(uA)
100
T=
a 2
5℃
REVERSE CURRENT IR
100
T=
a 1
00
℃
FORWARD CURRENT
IF
(mA)
1000
Reverse Characteristics
10
1
0.0
Ta=100℃
10
Ta=25℃
1
0.1
0.2
0.4
FORWARD VOLTAGE
0.6
VF
0.8
(V)
0
5
10
15
REVERSE VOLTAGE
20
VR
25
30
(V)
BDTIC
Capacitance Characteristics
120
Ta=25℃
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
90
60
30
0
0
5
10
15
REVERSE VOLTAGE
20
VR
25
30
(V)
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