Download DMN4026SSD Product Summary Features

DMN4026SSD
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
RDS(ON) MAX
40V
24mΩ @VGS = 10V
32mΩ @VGS = 4.5V
Features
ID
TA = +25°C
9.0A
7.8A

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
Description

Qualified to AEC-Q101 standards for High Reliability
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management

applications.

Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Applications

Motor Control

Backlighting

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram below


Power Management Functions

DC-DC Converters
SO-8
Terminals: Finish  Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (approximate)
D1
S1
D1
G1
D1
S2
D2
G2
D2
G1
Top View
Internal Schematic
Top View
D2
G2
S1
Equivalent Circuit
S2
Ordering Information (Note 4 & 5)
Part Number
DMN4026SSD-13
DMN4026SSDQ-13
Notes:
Qualification
Standard
Automotive
Case
SO-8
SO-8
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
( Top View )
8
5
Logo
N4026SD
Part no.
YY WW
Xth week: 01~53
Year: "12" =2012
1
4
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
1 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN4026SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
40
Units
V
VGSS
±20
V
Steady
State
TA = +25°C
TA = +70°C
ID
7.0
5.6
A
T<10s
TA = +25°C
TA = +70°C
ID
9.0
7.2
A
IS
2.5
A
IDM
70
A
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 6)
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
TA = +25°C
Total Power Dissipation (Note 7)
TA = +70°C
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Value
1.3
PD
Units
W
0.8
98
59
1.8
RθJA
PD
RθJC
1.1
71
43
11.8
TJ, TSTG
-55 to +150
RθJA
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
40

VGS = 0V, ID = 250µA
IDSS



1
V
Zero Gate Voltage Drain Current
µA
VDS = 40V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
IGSS


100
nA
VGS = ±20V, VDS = 0V
1
V
VDS = VGS, ID = 250µA
RDS(ON)

15
3

24

20
32
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
VSD

0.7
1.0
Ciss

1060

Output Capacitance
Coss

84

Reverse Transfer Capacitance
Crss

58

Gate Resistance
RG

1.6

Total Gate Charge (VGS = 4.5V)
Qg

8.8

Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg

19.1

Qgs

3.0

Static Drain-Source On-Resistance
VGS(th)
Gate-Drain Charge
Qgd

2.5

Turn-On Delay Time
tD(on)

5.3

Turn-On Rise Time
tr

7.1

Turn-Off Delay Time
tD(off)

15.1

mΩ
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
V
VGS = 0V, IS = 1.0A
pF
VDS = 20V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 20V, ID = 8A
nS
VDD = 25V, RL = 2.5Ω
VGS = 10V, RG = 3Ω
Turn-Off Fall Time
tf

4.8

Body Diode Reverse Recovery Time
trr

10.5

nS
IF = 8A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr

4.15

nC
IF = 8A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN4026SSD
20.0
VGS = 10V
VGS = 5.0V
ID, DRAIN CURRENT (A)
VGS = 4.5V
VDS = 5.0V
VGS = 3.5V
ID, DRAIN CURRENT (A)
VGS = 4.0V
15.0
10.0
VGS = 3.0V
5.0
TA = 150°C
TA = 125°C
TA = 85°C
T A = 25°C
TA = -55°C
VGS = 2.5V
0.0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
5
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.022
VGS = 4.5V
0.02
0.018
0.016
VGS = 10V
0.014
0.012
0.01
0.008
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.2
5
10
15
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.18
0.16
ID = 5.0A
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
3
20
0.05
4
5
6
7
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
2
VGS = 4.5V
0.045
0.04
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.024
0.5
TA = 150°C
0.035
T A = 125°C
0.03
TA = 85°C
0.025
TA = 25°C
0.02
TA = -55°C
0.015
0.01
VGS = 10V
ID = 10A
1.5
VGS = 4.5V
ID = 5A
1
0.5
0.005
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
3 of 6
www.diodes.com
August 2013
© Diodes Incorporated
3
0.04
0.035
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
DMN4026SSD
VGS = 4.5V
ID = 5A
0.03
0.025
0.02
VGS = 10V
ID = 10A
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
2.8
2.6
2.4
2.2
2
ID = 1mA
ID = 250µA
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
30
IS, SOURCE CURRENT (A)
25
20
T A = 150°C
15
TA = 125°C
TA = 85°C
10
TA = 25°C
TA = -55°C
5
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RJA(t) = r(t) * RJA
RJA = 94°C/W
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 10 Transient Thermal Resistance
10
100
1,000
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
4 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN4026SSD
Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0
8

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
5 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN4026SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
www.BDTIC.com/DIODES
DMN4026SSD
Document number: DS36351 Rev. 3 - 2
6 of 6
www.diodes.com
August 2013
© Diodes Incorporated