Download DNBT8105 Features Mechanical Data

DNBT8105
1A NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
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Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
High Collector Current Rating
Complementary Version Available (DPBT8105)
Lead Free By Design/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
C
B
Top View
Ordering Information
Device Schematic
(Note 3)
Part Number
DNBT8105-7
Notes:
E
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
YM
Marking Information
K81 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2004
R
2005
S
2006
T
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
K81
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DNBT8105
Document number: DS30513 Rev. 10 - 2
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June 2011
© Diodes Incorporated
DNBT8105
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
80
60
5
1
2
Unit
V
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
600
209
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
@TA = 25°C unless otherwise specified
Symbol
Min
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
IEBO
80
60
5
⎯
⎯
⎯
⎯
⎯
⎯
100
100
100
V
V
V
nA
nA
nA
hFE
100
100
80
30
⎯
300
⎯
⎯
0.25
0.5
1.1
1.0
10
⎯
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
Cobo
fT
⎯
150
Notes:
⎯
V
V
V
pF
MHz
Test Condition
IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCE = 60V
VEB = 4V, IC = 0
IC = 1mA, VCE = 5V
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
IC = 1A, VCE = 5V
VCB = 10V, f = 1.0MHz
VCE = 10V, IC = 50mA, f = 100MHz
4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
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DNBT8105
Document number: DS30513 Rev. 10 - 2
2 of 5
www.diodes.com
June 2011
© Diodes Incorporated
DNBT8105
350
800
VCE = 5V
PD, POWER DISSIPATION (mW)
700
300
hFE, DC CURRENT GAIN
600
500
400
300
200
100
250
TA = 85ºC
200
TA = 25ºC
150
50
RθJA = 209 °C/W
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 1)
200
300
350
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
250
200
TA = 125ºC
150
TA = 85ºC
100
TA = 25ºC
50
300
250
200
150
100
50
0
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
100
1,000
10
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
VCE = 5V
1.0
TA = -55ºC
0.8
TA = 25ºC
0.6
T A = 85ºC
TA = 125ºC
0.4
0.2
0
1
100
10
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
10,000
10
1,000
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 DC Current Gain vs. Collector Current
1
400
IC/IB = 10
0
TA = -55ºC
100
0
VCE (SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (mV)
TA = 125ºC
1.2
1.0
0.8
0.6
0.4
0.2
0
1
100
10
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
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DNBT8105
Document number: DS30513 Rev. 10 - 2
3 of 5
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June 2011
© Diodes Incorporated
DNBT8105
120
CAPACITANCE (pF)
100
80
60
40
20
0
10
15
5
20
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
0
Package Outline Dimensions
A
SOT-23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
α
All Dimensions in mm
B C
H
K
M
K1
D
J
F
L
G
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DNBT8105
Document number: DS30513 Rev. 10 - 2
4 of 5
www.diodes.com
June 2011
© Diodes Incorporated
DNBT8105
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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www.BDTIC.com/DIODES
DNBT8105
Document number: DS30513 Rev. 10 - 2
5 of 5
www.diodes.com
June 2011
© Diodes Incorporated