* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download Old Company Name in Catalogs and Other Documents
Power engineering wikipedia , lookup
Power inverter wikipedia , lookup
Electric power system wikipedia , lookup
Electrical substation wikipedia , lookup
History of electric power transmission wikipedia , lookup
Immunity-aware programming wikipedia , lookup
Electromagnetic compatibility wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Stray voltage wikipedia , lookup
Telecommunications engineering wikipedia , lookup
Current source wikipedia , lookup
Surge protector wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Rectiverter wikipedia , lookup
Voltage optimisation wikipedia , lookup
Distribution management system wikipedia , lookup
Buck converter wikipedia , lookup
Printed electronics wikipedia , lookup
Power electronics wikipedia , lookup
Alternating current wikipedia , lookup
Electronic engineering wikipedia , lookup
National Electrical Code wikipedia , lookup
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: 8. 9. 10. 11. 12. Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines. PART NUMBER PACKAGE µPA1770G Power SOP8 FEATURES • Dual chip type • Low on-resistance RDS(on)1 = 37 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A) RDS(on)2 = 39 mΩ MAX. (VGS = –4.0 V, ID = –3.0 A) RDS(on)3 = 59 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A) • Low input capacitance Ciss = 1300 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage VDSS –20 V Gate to Source Voltage VGSS ! 12 V Drain Current (DC) ID(DC) ! 6.0 A ID(pulse) ! 24 A Total Power Dissipation (1 unit) Note2 PT 0.40 W Total Power Dissipation (2 unit) Note2 PT 0.75 W Total Power Dissipation (1 unit) Note3 PT 1.7 W Total Power Dissipation (2 unit) Note3 PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) ★ ★ Note1 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 Board of 1600 mm x 1.6 mm, Drain Pad size : 4.5 mm x 35 µm, TA = 25°C 2 ★ 2 2 3. Mounted on ceramic substrate of 1200 mm x 2.2 mm, TA = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14055EJ1V0DS00 (1st edition) Date Published November 1999 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1999 µ PA1770 ★ ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = –4.5 V, ID = –3.0 A 28 37 mΩ RDS(on)2 VGS = –4.0 V, ID = –3.0 A 29.5 39 mΩ RDS(on)3 VGS = –2.5 V, ID = –3.0 A 44 59 mΩ VGS(off) VDS = –10 V, ID = 1 mA –0.5 –1.0 –1.5 V Forward Transfer Admittance | yfs | VDS = –10 V, ID = –3.0 A 5.0 11 Drain Leakage Current IDSS VDS = –20 V, VGS = 0 V –1 µA Gate to Source Leakage Current IGSS VGS = ! 12 V, VDS = 0 V ! 10 µA Input Capacitance Ciss VDS = –10 V 1300 pF Output Capacitance Coss VGS = 0 V 325 pF Reverse Transfer Capacitance Crss f = 1 MHz 155 pF Turn-on Delay Time td(on) ID = –3.0 A 25 ns VGS(on) = –4.5 V 110 ns VDD = –10 V 130 ns tf RG = 10 Ω 140 ns Total Gate Charge QG ID = –6.0 A 11 nC Gate to Source Charge QGS VDD = –16 V 2.0 nC Gate to Drain Charge QGD VGS = –4.5 V 4.0 nC VF(S-D) IF = 6.0 A, VGS = 0 V 0.8 V Reverse Recovery Time trr IF = 6.0 A, VGS = 0 V 60 ns Reverse Recovery Charge Qrr di/dt = 100 A / µs 40 nC Gate to Source Cut-off Voltage Rise Time tr Turn-off Delay Time td(off) Fall Time Body Diode Forward Voltage TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG RG = 10 Ω PG. VGS VGS Wave Form 0 PG. VDD ID Wave Form 90 % 90 % τ = 1µ s Duty Cycle ≤ 1 % 10 % 0 10 % tr td(on) ton IG = 2 mA RL 50 Ω VDD 90 % ID τ 2 VGS(on) 10 % ID VGS 0 S td(off) tf toff Data Sheet G14055EJ1V0DS00 µ PA1770 TYPICAL CHARACTERISTICS(TA = 25 °C, All terminals are connected.) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 Rth(ch-A) = 73.5 ˚C/W 100 10 1 0.1 0.01 0.001 0.00001 Mounted on ceramic Single Pulse substrate of 1200 mm 2 × 2.2 mm Single Pulse , 1 unit 0.0001 0.001 0.01 0.1 1 10 100 1000 100 10 VDS = −10 V Pulsed TA = −50˚C TA = −25˚C TA = 25˚C TA = 75˚C TA = 125˚C TA = 150˚C 1 0 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 80 Pulsed VGS = −2.5 V 60 VGS = −4.0 V 40 VGS = −4.5 V 20 0 −0.1 −1 −10 −100 VGS(off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - mΩ ★ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 70 ID = −6.0 A 60 50 40 ID = −3.0 A 30 20 10 0 0 −2 −4 −6 −8 −10 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −1.5 VDS = −10 V ID = 1 mA −1.0 −0.5 −0 −75 −50 −25 ID - Drain Current - A 0 25 50 75 100 125 150 Tch - Channel Temperature - ˚C Data Sheet G14055EJ1V0DS00 3 SOURCE TO DRAIN DIODE FORWARD VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100.0 100 VF(S−D) - Diode Forward Current - A 80.0 60.0 VGS = −2.5 V VGS = −4.0 V 40.0 VGS = −4.5 V 20.0 0.0 −50 ID = −3.0 A −25 0 25 50 75 100 VGS = −2.5 V 10 VGS = 0 V 1 0.1 0.01 0.00 125 150 0.50 Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Coss 100 Crss 10 1 −0.1 VGS = 0 V f = 1 MHz −1 −10 td(on), tr, td(off), tf - Switching Time - ns 1000 Ciss 1000 td(off) 100 tf tr td(on) 10 VDD = −16 V VGS = −4.5V RG = 10 Ω 1 −0.1 −100 −1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS trr - Reverse Recovery Time - ns di/dt = 100 A/ns VGS = 0 V 1000 100 10 1 10 100 VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 −30 −6 −25 −5 VGS −20 VDD = −16 V VDD = −10 V VDD = −4 V −15 −2 −5 0 0 −1 VDS 2 4 6 8 10 12 QG - Gate Charge - nC Data Sheet G14055EJ1V0DS00 −4 −3 −10 ID - Drain Current - A 4 −10 ID - Drain Current - A VDS - Drain to Source Voltage - V 10000 1.50 1.00 VSD - Source to Drain Voltage - V 10000 Ciss, Coss, Crss - Capacitance - pF Pulsed 14 0 16 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ µ PA1770 µ PA1770 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 100 80 60 40 20 Mounted on ceramic substrate of 1200 mm 2 × 2.2 mm 2.4 2 unit 2.0 1 unit 1.6 1.2 0.8 0.4 0 0 0 20 40 60 80 100 120 140 160 0 TA - Ambient Temperature - ˚C −30 PW TA = 25 ˚C Single Pulse ID - Drain Current - A 1 s m 10 PW m 0 10 s = (a RDS t V (o n) G L S = im −4 ite .5 d V) µs = = ID(DC) m s Po we −1 100 120 140 160 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed VGS = −4.5 V −20 VGS = −4.0 V −15 VGS = −2.5 V −10 d ite Lim −0.1 0 80 −5 n Mounted on ceramic substrate of 2 1200 mm × 2.2 mm −0.1 1unit tio ipa iss rD ID - Drain Current - A 0 10 PW PW −10 60 −25 = ID(pulse) 40 TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA −100 20 −1 −10 −100 −0 −0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A −100 VDS = −10 V Pulsed −10 −1 −0.1 TA = 150˚C TA = 125˚C TA = 75˚C −0.01 −0.001 0 TA = 25˚C TA = −25˚C TA = −50˚C −1 −2 −3 VGS - Gate to Source Voltage - V Data Sheet G14055EJ1V0DS00 5 µ PA1770 PACKAGE DRAWING (Unit : mm) Power SOP8 8 5 EQUIVALENT CIRCUIT 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 (1/2 circuit) 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 4.4 0.15 Remark 6 4 5.37 MAX. 1.27 0.78 MAX. 0.40 +0.10 –0.05 Body Diode Gate 6.0 ±0.3 0.8 Gate Protection Diode +0.10 –0.05 1.44 0.05 MIN. 1.8 MAX. 1 Drain Source 0.5 ±0.2 0.10 0.12 M The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet G14055EJ1V0DS00 µ PA1770 [MEMO] Data Sheet G14055EJ1V0DS00 7 µ PA1770 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8