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KSE45H Series KSE45H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A • Fast Switching Speeds • Complement to KSE44H TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter : KSE45H 1,2 : KSE45H 4,5 : KSE45H 7,8 : KSE45H 10,11 Value - 30 - 45 - 60 - 80 Units V V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 10 A ICP *Collector Current (Pulse) - 20 A PC Collector Dissipation (TC=25°C) 50 W PC Collector Dissipation (Ta=25°C) 1.67 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = Rated, VCEO, VEB = 0 IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 hFE *DC Current Gain : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 VCE = - 1V, IC = - 2A VCE(sat) *Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 Min. Typ. *Base-Emitter Saturation Voltage IC = - 8A, IB = - 0.8A fT Current Gain Bandwidth Product VCE = - 10V, IC = - 0.5A Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF Fall Time Units µA -100 µA -1 -1 V V 35 60 IC = - 8A, IB = - 0.8A IC = - 8A, IB = - 0.4A VBE(sat) Max. -10 -1.5 V 40 MHz VCB = - 10V, f = 1MHz 230 pF VCC =20V, IC = - 5A IB1 = - IB2 = - 0.5A 135 ns 500 ns 100 ns * Pulse test: PW≤300µs, Duty cycle≤2% www.BDTIC.com/FAIRCHILD ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE45H Series VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = 1V 100 10 1 -0.01 -0.1 -1 -10 -10 IC = 10 IB V BE(sat) -1 -0.1 VCE(sat) -0.01 -0.01 IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 10 -1 -10 -100 DC s 1µ IC[A], COLLECTOR CURRENT 100 10 s 1m Cob[pF], CAPACITANCE f=1MHZ 1 1µs 45H 1,2 45H 4,5 45H 7,8 45H 10,11 10µs 100µs 0.1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 60 PC[W], POWER DISSIPATION 50 40 30 20 10 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Power Derating www.BDTIC.com/FAIRCHILD ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE45H Series Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters www.BDTIC.com/FAIRCHILD ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ OPTOPLANAR™ FAST® ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. www.BDTIC.com/FAIRCHILD ©2001 Fairchild Semiconductor Corporation Rev. H3