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Transcript
KSE45H Series
KSE45H Series
General Purpose Power Switching Applications
• Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A
• Fast Switching Speeds
• Complement to KSE44H
TO-220
1
1.Base
2.Collector
3.Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
: KSE45H 1,2
: KSE45H 4,5
: KSE45H 7,8
: KSE45H 10,11
Value
- 30
- 45
- 60
- 80
Units
V
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
- 10
A
ICP
*Collector Current (Pulse)
- 20
A
PC
Collector Dissipation (TC=25°C)
50
W
PC
Collector Dissipation (Ta=25°C)
1.67
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
ICES
Parameter
Collector Cut-off Current
Test Condition
VCE = Rated, VCEO, VEB = 0
IEBO
Emitter Cut-off Current
VEB = - 5V, IC = 0
hFE
*DC Current Gain
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
VCE = - 1V, IC = - 2A
VCE(sat)
*Collector-Emitter Saturation Voltage
: KSE45H 1, 4, 7 10
: KSE45H 2, 5, 8,11
Min.
Typ.
*Base-Emitter Saturation Voltage
IC = - 8A, IB = - 0.8A
fT
Current Gain Bandwidth Product
VCE = - 10V, IC = - 0.5A
Cob
Output Capacitance
tON
Turn ON Time
tSTG
Storage Time
tF
Fall Time
Units
µA
-100
µA
-1
-1
V
V
35
60
IC = - 8A, IB = - 0.8A
IC = - 8A, IB = - 0.4A
VBE(sat)
Max.
-10
-1.5
V
40
MHz
VCB = - 10V, f = 1MHz
230
pF
VCC =20V, IC = - 5A
IB1 = - IB2 = - 0.5A
135
ns
500
ns
100
ns
* Pulse test: PW≤300µs, Duty cycle≤2%
www.BDTIC.com/FAIRCHILD
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSE45H Series
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Characteristics
1000
hFE, DC CURRENT GAIN
VCE = 1V
100
10
1
-0.01
-0.1
-1
-10
-10
IC = 10 IB
V BE(sat)
-1
-0.1
VCE(sat)
-0.01
-0.01
IC[A], COLLECTOR CURRENT
-0.1
-1
-10
-100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
100
10
-1
-10
-100
DC
s
1µ
IC[A], COLLECTOR CURRENT
100
10
s
1m
Cob[pF], CAPACITANCE
f=1MHZ
1
1µs
45H 1,2
45H 4,5
45H 7,8
45H 10,11
10µs
100µs
0.1
1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Safe Operating Area
60
PC[W], POWER DISSIPATION
50
40
30
20
10
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 5. Power Derating
www.BDTIC.com/FAIRCHILD
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSE45H Series
Package Demensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
www.BDTIC.com/FAIRCHILD
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
OPTOPLANAR™
FAST®
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body,
device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
www.BDTIC.com/FAIRCHILD
©2001 Fairchild Semiconductor Corporation
Rev. H3