Download FGA30N60LSD 600 V, 30 A PT IGBT F G

FGA30N60LSD
600 V, 30 A PT IGBT
Features
General Description
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
Using Fairchild®'s advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
C
G
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector-Emitter Voltage
FGA30N60LSD
Unit
600
V
 20
V
60
A
VGES
Gate-Emitter Voltage
IC
Collector Current
@ TC = 25C
Collector Current
@ TC = 100C
30
A
ICM (1)
Pulsed Collector Current
90
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
150
A
PD
Maximum Power Dissipation
@ TC = 25C
480
W
Maximum Power Dissipation
@ TC = 100C
192
W
TJ
Operating Junction Temperature
-55 to +150
C
Tstg
Storage Temperature Range
-55 to +150
C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
Parameter
Thermal Resistance, Junction-to-Case
Typ.
Max.
Unit
--
0.26
C/W
RJC(Diode)
Thermal Resistance, Junction-to-Case
--
0.92
C/W
RJA
Thermal Resistance, Junction-to-Ambient
--
40
C/W
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
1
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
April 2013
Device Marking
Device
Package
Packaging
Type
FGA30N60LSD
FGA30N60LSDTU
TO-3PN
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Unit
600
--
--
V
--
0.6
--
V/C

Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250uA
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
250
uA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±250
nA

On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
IC = 250uA, VCE = VGE
4.0
5.5
7.0
V
IC = 30A, VGE = 15V
--
1.1
1.4
V
IC = 30A, VGE = 15V,
TC = 125C
--
1.0
--
V
IC = 60 A, VGE = 15V
--
1.3
--
V
--
3550
--
pF
--
245
--
pF
--
90
--
pF

Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz

Switching Characteristics
td(on)
Turn-On Delay Time
--
18
--
ns
tr
Rise Time
--
46
--
ns
td(off)
Turn-Off Delay Time
--
250
--
ns
tf
Fall Time
--
1.3
2.0
us
--
1.1
--
mJ
--
21
--
mJ
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
VCC = 400 V, IC = 30A,
RG = 6.8, VGE = 15V,
Inductive Load, TC = 25C
td(on)
Turn-On Delay Time
--
17
--
ns
tr
Rise Time
--
45
--
ns
td(off)
Turn-Off Delay Time
--
270
--
ns
tf
Fall Time
--
2.6
--
us
Eon
Turn-On Switching Loss
--
1.1
--
mJ
Eoff
Turn-Off Switching Loss
--
36
--
mJ
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VCC = 400 V, IC = 30A,
RG =6.8, VGE = 15V,
Inductive Load, TC = 125C
--
225
--
nC
VCE = 300 V, IC = 30A,
VGE = 15V
--
30
--
nC
--
105
--
nC
Measured 5mm from PKG
--
7
--
nH
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
2
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
Package Marking and Ordering Information
Parameter
TC = 25°C unless otherwise noted
Conditions
Min.
Typ.
Max
Unit
VFM
IF = 15A
IF = 15A
TC = 25 C
TC = 125 C
-
1.8
1.6
2.2
-
V
V
IRM
VR = 600V
TC = 25 C
-
-
100
A
trr
IF =1A, di/dt = 100A/s, VCC = 30V
IF =15A, di/dt = 100A/s, VCC = 390V
TC = 25 C
TC = 25 C
-
-
35
40
ns
ns
ta
tb
Qrr
IF =15A, di/dt = 100A/s, VCC = 390V
TC = 25 C
TC = 25 C
TC = 25 C
-
18
13
27.5
-
ns
ns
nC
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
3
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
Electrical Characteristics of the Diode
FGA30N60LSD 600 V, 30 A PT IGBT
Typical Performance Characteristics
Figure 1.Typical Output Characteristics
90
o
Collector Current, IC [A]
30
0
1
2
3
Collector-Emitter Voltage, VCE [V]
30
0
0
4
90
Common Emitter
VCE = 20V
Common Emitter
VGE = 15V
o
o
TC = 25 C
o
TC = 125 C
60
TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]
1
2
3
Collector-Emitter Voltage, VCE [V]
Figure 4. Transfer characteristics
90
o
TC = 125 C
60
30
30
0
1
2
Collector-Emitter Voltage, VCE [V]
0
3
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
12
20
Common Emitter
VGE = 15V
Common Emitter
Collector-Emitter Voltage, VCE [V]
1.4
0
Figure 6. Saturation Voltage vs. Vge
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
15V
12V
10V
8V
60
4
Figure 3. Typical Saturation Voltage
Characteritics
0
VGE = 20V
TC = 125 C
15V
12V
10V
8V
60
0
o
VGE = 20V
TC = 25 C
Collector Current, IC [A]
90
Figure 2. Typical Saturation Voltage
Characteristics
60A
1.2
30A
1.0
IC = 15A
0.8
0.6
25
o
T = 25 C
C
16
12
8
4
60A
30A
IC = 15A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
4
www.fairchildsemi.com
(Continued)
Figure 7. Saturation Voltage vs. Vge
20
FGA30N60LSD 600 V, 30 A PT IGBT
Typical Performance Characteristics
Figure 8. Capacitance characteristics
13000
10000
Common Emitter
TC = 125 C
Cies
16
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
12
8
30A 60A
TC = 25 C
Cres
IC = 15A
0
100
4
8
12
16
Gate-Emitter Voltage, VGE [V]
50
20
Figure 9. Gate Charge Characteristics
5
10
15
20
25
Collector-Emitter Voltage, VCE [V]
30
Figure 10. SOA Characteeristics
Common Emitter
IC = 30A
o
12 TC = 25 C
Ic MAX (Pulsed)
100
Collector Current, Ic [A]
Vcc = 100V
9
300V
200V
6
3
0
0
300
15
Gate-Emitter Voltage, VGE [V]
o
1000
4
0
0
50
100
150
200
Gate Charge, Qg [nC]
80
10
1ms
1 Single Nonrepetitive
o
Pulse TC = 25 C
Curves must be derated
linearly with increase
in temperature
DC Operation
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
200
100
Switching Time [ns]
60
50
40
30
20
10
100s
Figure 12. Turn-On Characteristics vs.
Gate Resistance
Vcc = 400V
load Current : peak of square wave
70
50s
Ic MAX (Continuous)
0.1
0.1
250
Figure 11. Load Current Vs. Frequency
Load Current [A]
Common Emitter
VGE = 0V, f = 1MHz
Coes
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(on)
Duty cycle : 50%
o
Tc = 100 C
Powe Dissipation = 192W
0
0.1
1
10
100
Frequency [kHz]
o
TC = 25 C
o
TC = 125 C
10
1000
0
10
20
30
40
50
Gate Resistance, RG []
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
5
www.fairchildsemi.com
(Continued)
Figure 13. Turn-Off Characteristics vs.
Gate Resistance
Figure 14. Turn-On Characteristics vs.
Collector Current
500
3000
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
Switching Time [ns]
Switching Time [ns]
o
tf
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
td(off)
TC = 125 C
100
tr
td(on)
10
o
TC = 25 C
o
100
TC = 125 C
0
10
20
30
40
20
50
30
40
Figure 15. Turn-Off Characteristics vs.
Collector Current
500
70
80
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
Switching Loss [mJ]
tf
Switching Time [ns]
60
Figure 16. Switching Loss vs
Gate Resistance
6000
1000
Common Emitter
VGE = 15V, RG = 6.8
o
TC = 25 C
o
td(off)
50
Collector Current, IC [A]
Gate Resistance, RG []
TC = 125 C
o
100 TC = 25 C
o
Eoff
TC = 125 C
10
Eon
100
20
30
40
50
60
70
1
80
Collector Current, IC [A]
10
15
20
25
30
35
40
45
50
Gate Resistance, RG []
Figure 17.Switching Loss vs Collector Current
Figure 18. Turn-Off Switching
SOA Characteristics
200
100
100
Collector Current, IC [A]
Eoff
Switching Loss [mJ]
5
10
Eon
1
Common Emitter
VGE = 15V, RG = 6.8
10
o
TC = 25 C
o
TC = 125 C
0.1
10
20
30
40
50
60
70
1
80
Collector Current, IC [A]
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
6
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
Typical Performance Characteristics
FGA30N60LSD 600 V, 30 A PT IGBT
Figure 19. Transient Thermal Impedance of IGBT
1
Thermal Response [Zthjc]
0.5
0.1
0.2
0.1
0.05
0.01
0.02
PDM
t1
0.01
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
Figure 20. Typical Forward Voltage Drop
1
10
Figure 21. Typical Reverse Current
100
1E-4
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
10
o
TC=125 C
1
o
TC=75 C
1E-5
o
TC = 125 C
o
1E-6
TC = 75 C
1E-7
o
TC = 25 C
1E-8
o
TC=25 C
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1E-9
3.2
FORWARD VOLTAGE, VF [V]
0
100
200
300
400
500
600
REVERSE VOLTAGE, VR [V]
REVERSE RECOVERY TIME, trr [ns]
Figure 22. Typical Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
IF = 15A
o
TC = 125 C
o
TC = 75 C
o
TC = 25 C
200
300
400
500
di/dt [A/s]
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
7
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
8
www.fairchildsemi.com
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
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©2008 Fairchild Semiconductor Corporation
FGA30N60LSD Rev.C0
9
www.fairchildsemi.com
FGA30N60LSD 600 V, 30 A PT IGBT
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