Download CPH5505 数据资料DataSheet下载

Ordering number:ENN6479
PNP Epitaxial Planar Silicon Transistor
CPH5505
DC/DC Converter Applications
Applications
Package Dimensions
· Relay drivers, lamp drivers, motor drivers, strobes.
unit:mm
2182
Features
[CPH5505]
2.9
4
0.15
3
2.8
0.05
0.6
1.6
0.6
5
0.2
· Composite type with two PNP transistors contained
in a single package facilitating high-density mounting.
· The CPH5505 consists of two chips which are
equivalent to the CPH3109 encapsulated in a package.
· Ultrasmall package facilitates miniaturization in end
products (mounting height : 0.9mm).
1
2
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter Common
5 : Base
SANYO : CPH5
0.9
0.7
0.2
0.95
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
–30
V
Collector-to-Emitter Voltage
VCEO
–30
V
Emitter-to-Base Voltage
VEBO
IC
–5
V
–3
A
ICP
IB
–5
A
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
PC
PT
Junction Temperature
Tj
Storage Temperature
Tstg
–600
mA
Mounted on a ceramic board (600mm2×0.8mm)
0.9
W
Mounted on a ceramic board (600mm2×0.8mm)
1.2
W
150
˚C
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
Symbol
ICBO
IEBO
Gain-Bandwidth Product
hFE
fT
Output Capacitance
Cob
DC Current Gain
Conditions
VCB=–30V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–500mA
Ratings
min
typ
200
Unit
–0.1
µA
–0.1
µA
560
VCE=–10V, IC=–500mA
VCB=–10V, f=1MHz
Marking CPH5505 : EE
max
380
MHz
25
pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000TS (KOTO) TA-2845 No.6479–1/4
CPH5505
Continued from preceding page.
Ratings
Parameter
Symbol
VCE(sat)1
VCE(sat)2
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Turn-OFF Time
IC=–1.5A, IB=–30mA
IC=–1.5A, IB=–75mA
IC=–1.5A, IB=–30mA
typ
max
Unit
–155
–230
mV
–105
–155
mV
–0.83
–1.2
V
–30
V
–30
V
–5
V
ton
tstg
See specified Test Circuit.
50
ns
See specified Test Circuit.
270
ns
tf
See specified Test Circuit.
25
ns
Electrical Connection
EC
min
VBE(sat)
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–1mA, RBE=∞
V(BR)EBO IC=–10µA, IC=0
Collector-to-Base Breakdown Voltage
B1
Conditions
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
B2
IB2
INPUT
RB
C1
24
VR10
C2
+
50Ω
+
100µF
470µF
5V
–12V
–20IB1=20IB2=IC=–500mA
IC -- VCE
VCE=--2V
--3.5
--8mA
--4mA
--0.8
--2mA
--0.4
--3.0
--2.5
--2.0
--1.5
°C
25°C
--25°
C
--6mA
Ta=7
5
A
--50m
Collector Current, IC – A
--3
0
0
--2
--1.6
--1.2
IC -- VBE
--4.0
--10mA
mA
mA
--40mA
Collector Current, IC – A
--2.0
--1.0
--0.5
IB=0
0
0
--200
--400
--600
--800
Collector-to-Emitter Voltage, VCE – V
Ta=75°C
3
25°C
--25°C
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
5
100
7
5
3
2
2
3
--0.2
--0.4
--0.6
--0.8
2
3
5 7 --1.0
Collector Current, IC – A
2
3
5 7 --10
IT01745
--1.2
IT01744
VCE(sat) -- IC
--1.0
7
5
IC / IB=20
3
2
--0.1
7
5
7
Ta=
3
2
5°C
°C
25
°C
--25
--0.01
7
5
3
2
--0.001
--0.01
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5 7 --0.1
--1.0
Base-to-Emitter Voltage, VBE – V
VCE=--2V
7
DC Current Gain, hFE
0
IT01743
hFE -- IC
1000
10
--0.01
0
--1000
2
3
5 7 --0.1
2
3
5 7 --1.0
Collector Current, IC – A
2
3
5 7 --10
IT01746
No.6479–2/4
CPH5505
VCE(sat) -- IC
--1.0
7
5
3
2
C
=75°
Ta
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Gain-Bandwidth Product, f T – MHz
100
7
5
3
2
3
5
7
2
--10
3
Collector-to-Base Voltage, VCB – V
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
IT01748
f T -- IC
VCE= --10V
7
5
3
2
100
7
5
3
2
2
3
5
7 --100
2
3
5
7 --1000
Collector Current, IC – mA
2
3
IT01750
PC -- Ta
10
s
0m
s
op
era
3
2
s
10
s
DC
ms
Collector Dissipation, PC – W
0µ
1.2
0µ
1m
10
tio
n
Ta=25°C
Single pulse
1unit
Mounted on a ceramic board(600mm2×0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
1.0
0.9
To
t
al
0.8
1u
nit
0.6
di
ss
ip
ati
on
0.4
0.2
0
2
Collector-to-Emitter Voltage, VCE – V
3
5
IT01751
Mounted on a ceramic board(600mm2×0.8mm)
0
20
40
60
80
100
120
Ambient Temperature, Ta – °C
140
160
IT01820
PC(TR2) -- PC(TR1)
1.0
Collector Dissipation, PC(TR2) – W
25°C
3
1.4
50
Collector Current, IC – A
75°C
5
IT01749
IC= --3A
--1.0
7
5
3
2
Ta= --25°C
7
ICP= --5A
3
2
--0.1
7
5
--1.0
10
--10
5
ASO
--10
7
5
2
1000
f=1MHz
2
3
Collector Current, IC – A
Cob -- VCB
10
--1.0
5
--0.1
--0.01
5 7 --10
IT01747
Collector Current, IC – A
2
Output Capacitance, Cob – pF
C
C
2
--0.01
--0.01
25°
°
--25
IC / IB=50
7
3
2
--0.1
7
5
VBE(sat) -- IC
--10
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
--10
7
5
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1unit
Mounted on a ceramic board(600mm2×0.8mm)
0
0.1
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0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector Dissipation, PC(TR1) – W
0.9
1.0
IT01821
No.6479–3/4
CPH5505
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject
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to change without notice.
PS No.6479–4/4