Download RSR020P03

RSR020P03
Transistors
4V Drive Pch MOSFET
RSR020P03
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3
1.0MAX
zFeatures
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.3~0.6
0.95 0.95
0.16
1.9
(1) Gate
Each lead has same dimensions
(2) Source
zApplications
Switching
Abbreviated symbol : WZ
(3) Drain
zPackaging specifications
zInner circuit
Package
Type
0~0.1
(2)
(1)
Taping
(3)
TL
Code
Basic ordering unit (pieces)
3000
RSR020P03
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±2
±8
−0.8
−8
1
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
125
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Rev.A
1/4
RSR020P03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −30
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
RDS (on)∗
−
resistance
−
Yfs ∗ 1.4
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
Crss
−
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
Qg ∗
−
Total gate charge
Qgs ∗
−
Gate-source charge
−
Qgd ∗
Gate-drain charge
Typ.
−
−
−
−
85
135
150
−
370
80
55
8
10
35
11
4.3
1.4
1.5
Max.
±10
−
−1
−2.5
120
190
210
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −2A, VGS= −10V
ID= −1A, VGS= −4.5V
ID= −1A, VGS= −4V
VDS= −10V, ID= −1A
VDS= −10V
VGS=0V
f=1MHz
VDD −15V
ID= −1A
VGS= − 10V
RL=15Ω
RG=10Ω
VDD −15V VGS= −5V
ID= −2A
RG=10Ω
RL=7.5Ω
Unit
V
IS= −0.8A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
−1.2
Conditions
∗Pulsed
Rev.A
2/4
RSR020P03
Transistors
zElectrical characteristics curves
1000
10000
100
Coss
Crss
1000
tf
td (off)
100
tr
10
td (on)
0.1
1
10
1
0.01
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
10
DRAIN CURRENT : −ID (A)
VDS= −10V
Pulsed
1
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : −RDS (on) (mΩ)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
4
3
2
1
0
Ta=125°C
75°C
25°C
−25°C
100
10
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )
1
1.5
2
2.5
3
3.5
4
4.5
TOTAL GATE CHARGE : Qg (nC)
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
10
Ta=25°C
Pulsed
1000
ID= −2A
800
600
ID= −1A
400
200
0
0
2
4
6
8
10
12
14
1000
VGS= −4.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
100
1
10
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙ )
VGS= 0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.0
16
0.5
1.0
1.5
2.0
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
10
0.1
0.5
DRAIN CURRENT : −ID (A)
GATE-SOURCE VOLTAGE : −VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : −RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : −RDS (on) (mΩ)
10
1200
4.0
VGS= −10V
Pulsed
1
1
1400
Fig.4 Typical Transfer Characteristics
10
0.1
5
1600
GATE-SOURCE VOLTAGE : −VGS (V)
1000
6
0
0.1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : −RDS (on) (mΩ)
10
0.01
Ta=25°C
VDD= −15V
ID= −2A
RG=10Ω
Pulsed
7
REVERSE DRAIN CURRENT : −IDR (A)
Ciss
8
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : −VGS (V)
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
VGS=0V
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
1000
VGS= −4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
100
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙΙ )
Rev.A
3/4
RSR020P03
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : −RDS (on) (mΩ)
Transistors
1000
Ta=25°C
Pulsed
VGS= −4.0V
−4.5V
−10V
100
10
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )
Rev.A
4/4
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
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you must abide by the procedures and provisions stipulated in all applicable export laws and
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R1102A