Download MMSTA56

SSTA56 / MMSTA56
Transistors
PNP general purpose transistor
SSTA56 / MMSTA56
zFeatures
zExternal dimensions (Unit : mm)
1) BVCEO 40V (IC = 100PA)
2) Complements the SSTA06 / MMSTA06.
SSTA56
2.9±0.2
0.95 +0.2
−0.1
1.9±0.2
0.45±0.1
0.95 0.95
zPackage, marking and packaging specifications
Part No.
Packaging type
SSTA56
SST3
MMSTA56
SMT3
Marking
Code
Basic ordering unit (pieces)
R2G
T116
3000
R2G
T146
3000
2.4± 0.2
(2)
0.2
1.3+
−0.1
(1)
0~0.1
0.2Min.
(3)
(1) Emitter
(2) Base
(3) Collector
+0.1
0.15 −0.06
0.4 +0.1
−0.05
ROHM : SST3
JEDEC : SOT-23
All terminals have same dimensions
MMSTA56
2.9±0.2
1.1 +0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
2.8± 0.2
(2)
0.2
1.6 +
−0.1
(1)
0~0.1
+0.1
0.15 −0.06
0.4 +0.1
−0.05
All terminals have same dimensions
0.3Min.
(3)
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
zAbsolute maximum ratings (Ta=25qC)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−4
V
IC
−0.5
A
0.2
W
Parameter
Collector current
Collector power dissipation
PC
Junction temperature
Tj
0.35
150
W
°C
Storage temperature
Tstg
−55 to +150
°C
∗
∗ Mounted on a 7×5×0.6mm CERAMIC SUBSTRATE
zElectrical characteristics (Ta=25qC)
Parameter
Unit
V
V
Symbol
Min.
Typ.
Max.
Emitter-base breakdown voltage
BVEBO
−4
−
−
Collector-emitter breakdown voltage
BVCEO
−80
−
−
ICBO
−
−
−0.1
ICEO
−
−
−1
Collector-emitter saturation voltage
VCE(sat)
−
−
0.25
V
Base-emitter saturation voltage
VBE(on)
−
−
−1.2
V
100
−
−
100
−
−
50
−
−
Collector cutoff current
DC current transfer ratio
Transition frequency
hFE
fT
μA
−
MHz
Conditions
IC = −100mA
IC = −1mA
VCB= −80V
VCE= −60V
IC /IB= −100mA/−10mA
VCE/IB= −1V/100mA
VCE= −1V , IC = −10mA
VCE= −1V , IC = −100mA
VCE= −1V , IE= 100mA , f=100MHz
Rev.A
1/2
SSTA56 / MMSTA56
Transistors
zElectrical characteristic curves
1000
A
2.5m
2.0mA
300
1.5mA
0.5mA
100
IB=0mA
0
0
2.0
0.4
0.8
1.2
1.6
VCE-COLLECTOR-EMITTER VOLTAGE (V)
3V
10
VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V)
VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V)
Ta=125°C
0.2
25°C
−40°C
0.1
0
1
Fig.4 Collector emitter saturation
voltage vs. collector current
10
5 10 20 50 100 200 500 1000
IC-COLLECTOR CURRENT (mA)
Ta=25°C
IC / IB=10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1000
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
CAPACITANCE (pF)
2
10
100
1000
IC-COLLECTOR CURRENT (mA)
Cib
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.3 DC current gain vs. collector
current ( ΙΙ )
1.8
VCE=3V
1.6
1.4
1.2
1.0
Ta=−40°C
0.8
25°C
0.6
125°C
0.4
0.2
0
1
Fig.5 Base-emitter saturation
voltage vs. collector current
Ta=25°C
f=1MHz
100
1.8
10
100
1000
IC-COLLECTOR CURRENT (mA)
500
1
Fig.2 DC current gain vs. collector
current ( Ι )
0.3
25°C
−40°C
100
1V
Fig.1 Grounded emitter output
characteristics
IC / IB=10
VCE=3V
Ta=125°C
VCC=5V
100
1.0mA
200
1000
VBE(ON)BASE EMITTER VOLTAGE (V)
400
Ta=25°C
A
5.0m
4.5mA
4.0mA
3.5mA
3.0mA
hFE-DC CURRENT GAIN
IC-COLLECTOR CURRENT (mA)
Ta=25°C
hFE-DC CURRENT GAIN
500
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.6 Grounded emitter propagation
characteristics
Ta=25°C
VCE=10V
100
Cob
10
5
0.5
1
10
REVERSE BIAS VOLTAGE (V)
Fig.7 Input/output capecitance
vs. voltage
50
!
10
1
10
100
1000
IC-COLLECTOR CURRENT (mA)
Fig.8 Gain bandwidth product
vs. collector current
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1