Download IMX8

IMX8
Transistors
General purpose (dual transistors)
IMX8
zFeatures
1) Two 2SC3906K chips in an SMT package.
2) High breakdown voltage.
IMX8
SMT6
X8
T108
(1)
(2)
1.6
0.8
0.3Min.
0~0.1
3000
1.1
2.8
0.15
Code
Basic ordering unit (pieces)
(3)
(4)
Part No.
Package
Marking
(5)
zPackage, marking, and packaging specifications
0.95 0.95
1.9
2.9
0.3
(6)
zExternal dimensions (Unit : mm)
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
zEquivalent circuit
(4) (5) (6)
Tr2
(3)
Tr1
(2)
(1)
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
Emitter-base voltage
Collector current
VEBO
IC
120
120
5
50
V
V
V
mA
Power dissipation
Junction temperature
Storage temperature
Pc
Tj
Tstg
300(TOTAL)
150
−55 to +150
mW
°C
Parameter
∗
°C
∗ 200mW per element must not be exceeded.
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
120
120
−
−
−
−
V
V
IC=50µA
IC=1mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
5
−
−
−
−
−
−
0.5
0.5
V
µA
µA
IE=50µA
hFE
fT
180
−
820
−
−
140
−
MHz
VCE(sat)
−
−
0.5
V
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
ICBO
IEBO
Conditions
VCB=100V
VEB=4V
VCE=6V, IC=2mA
VCE=12V, IE= −2mA, f=100MHz
∗
IC/IB=10mA/1mA
∗Transition frequency of the device
Rev.A
1/2
IMX8
Transistors
zElectrical characteristics
50
8
20.0
17.5
6
15.0
12.5
10.0
4
7.5
5.0
2
2.5
IB=0µA
4
0
8
Ta=25°C
16
20
12
10
5
2
1
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(V)
IC/IB=50
20
10
2
5
10
20
0.2 0.4
50
0.2
Ta=100°C
0.1
25°C
−40°C
0.05
0.02
1
5
2
1
−0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
5
10
20
50
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
10
2
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( )
Ta=25°C
f=1MHz
IE=0A
0.2
0.5
1
2
5
10
20
50
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
VCE=6V
Ta=25°C
IC/IB=10
0.5
COLLECTOR CURRENT : IC (mA)
20
0.6 0.8 1.0 1.2 1.4 1.6
Fig.2 Ground emitter propagation characteristics
0.2
0.02
1
VCE=1V
100
BASE TO EMITTER VOLTAGE : VBE (V)
Ta=25°C
0.05
3V
200
50
0.1
0
0.5
0.1
5V
500
0.2
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
Ta=25°C
Ta=25°C
VCE=6V
20
TRANSITION FREQUENCY : fT (MHz)
22.5
DC CURRENT GAIN : hFE
25.0
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10
500
200
100
50
−0.5
−1
−2
−5
−10 −20
−50
COLLECTOR CURRENT : IE (mA)
Fig.6 Gain bandwidth product vs. emitter current
Ta=25°C
f=1MHz
IC=0A
20
10
5
2
1
−0.5
1
2
5
10
20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1