Download EMX1

EMX1 / UMX1N / IMX1
Transistors
General purpose transistors
(dual transistors)
EMX1 / UMX1N / IMX1
!Features
1) Two 2SC2412K chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!External dimensions (Units : mm)
(3)
0.22
(4)
(5)
(2)
(6)
0.5 0.5
1.0
1.6
EMX1
(1)
0.5
0.13
1.2
1.6
Each lead has same dimensions
ROHM : EMT6
2.0
1.3
(3)
(2)
(1)
1.25
0.65
(6)
(5)
0.2
(4)
UMX1N
!Structure
Epitaxial planar type
NPN silicon transistor
0.65
Abbreviated symbol : X1
(3)
(2)
0.9
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
IMX1
(4)
(1)
(5)
Tr1
(6)
Abbreviated symbol : X1
IMX1
Tr1
Tr2
0to0.1
0.1Min.
!Equivalent circuit
EMX1 / UMX1N
0.7
0.15
2.1
(2)
(1)
(2)
(3)
(6)
(1)
(3)
0.95 0.95
1.9
2.9
(5)
(4)
(4)
(5)
0.3
(6)
Tr2
1.6
0.3to0.6
0to0.1
1.1
The following characteristics apply to both Tr1 and Tr2.
0.8
0.15
2.8
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!Absolute maximum ratings (Ta = 25°C)
Abbreviated symbol : X1
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
150
mA
EMX1, UMX1N
Power
dissipation IMX1
PC
Parameter
150 (TOTAL)
mW
300 (TOTAL)
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55∼+150
˚C
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
1/3
EMX1 / UMX1N / IMX1
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
7
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.1
µA
VCB=60V
Emitter cutoff current
IEBO
−
−
0.1
µA
VEB=7V
VCE (sat)
−
−
0.4
V
IC/IB=50mA/5mA
hFE
120
−
560
−
VCE=6V, IC=1mA
fT
−
180
−
Cob
−
2
3.5
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
MHz VCE=12V, IE=−2mA, f=100MHz
PF
∗
VCB=12V, IE=0A, f=1MHz
!Packaging specifications
Package
Type
Taping
Code
T2R
TN
T110
Basic ordering
unit (pieces)
8000
3000
3000
EMX1
UMX1N
IMX1
!Electrical characteristic curves
10
2
1
25˚C
−55˚C
5
0.5
0.2
0.50mA
mA
0.45mA
0.40
0.35mA
Ta=25˚C
80
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB=0A
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( I )
10
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
20
0.1
0
100
VCE=6V
Ta=100˚C
COLLECTOR CURRENT : IC (mA)
50
30µA
Ta=25˚C
27µA
8
24µA
21µA
18µA
6
15µA
12µA
4
9µA
6µA
2
3µA
0
0
IB=0A
4
8
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( II )
2/3
EMX1 / UMX1N / IMX1
500
Ta=25˚C
50
−55˚C
100
50
20
20
0.5
1
2
5
10 20
10
0.2
50 100 200
0.5
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
TRANSITION FREQUENCY : fT (MHz)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( I )
Ta=25˚C
VCE=6V
500
200
100
50
−0.5
−1
−2
−5
−10
−20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.10 Gain bandwidth product vs.
emitter current
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
IC/IB=50
20
10
0.1
10 20
50 100 200
0.5
0.2
0.1
IC/IB=50
0.05
IC/IB=10
Ta=100˚C
25˚C
−55˚C
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
10
0.02
0.01
0.2
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
5
2
Co
b
1
0.2
0.5
1
2
5
10
20
0.5
1
2
5
10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
0.5
IC/IB=50
Ta=100˚C
25˚C
−55˚C
0.2
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : IC (mA)
Fig.9 Collector-emitter saturation
voltage vs. collector current ( III )
Fig.8 Collector-emitter saturation
voltage vs. collector current ( II )
10
20
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
0.2
5
Ta=25˚C
0.5
Fig.5 DC current gain vs. collector
current ( II )
Fig.4 DC current gain vs. collector
current ( I )
Ta=25˚C
2
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
0.5
1
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
100
25˚C
200
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.11 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps)
VCE=5V
3V
1V
200
10
0.2
VCE=5V
Ta=100˚C
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
500
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
Transistors
Ta=25˚C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.12 Base-collector time constant vs.
emitter current
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0