Download 2SD2444K

2SD2444K
Transistors
Power Transistor (15V, 1A)
2SD2444K
zFeatures
1) Low saturation voltage, VCE(sat) = 0.3V (Max.)
at IC / IB = 0.4A / 20mA.
2) IC = 1A
3) Complements the 2SB1590K.
zExternal dimensions (Unit : mm)
SMT3
2.9
1.1
0.4
0.8
1.6
2.8
(3)
(2)
(1)
0.3Min.
zPackaging specification and hFE
0.95 0.95
0.15
Type
2SD2444K
Package
SMT3
hFE
R
Marking
1.9
(1)Emitter
(2)Base
Each lead has same dimensions
(3)Collector
BS∗
Code
T146
Basic ordering unit (pieces)
3000
∗ Denotes h
FE
zAbsolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
15
V
Emitter-base voltage
Parameter
VEBO
6
V
Collector current
IC
1
A (DC)
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
15
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
15
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V
IE=50µA
Collector cutoff current
ICBO
−
−
0.5
µA
VCB=12V
Emitter cutoff current
IEBO
−
−
0.5
µA
VEB=5V
VCE(sat)
−
−
0.3
V
IC=400mA, IB=20mA
hFE
180
−
390
−
VCE/IC=2V/50mA
Transition frequency
fT
−
200
−
MHz
Output capacitance
Cob
−
15
−
pF
Collector-emitter saturation voltage
DC current transfer ratio
Conditions
VCE=2V, IE= −50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2
2SD2444K
Transistors
1
50
25
0
0
25
50
75
100
125
50m
20m
10m
5m
2m
1m
0
150
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Grounded emitter output
characteristics
1000
DC CURRENT GAIN : hFE
200
100
50
20
2m
5m 10m 20m 50m 100m 200m 500m 1
100m
VCE=2V
Ta=125°C
25°C
−40°C
200
100
50
50m
20m
10m
5m
2m
1m
1m 2m
2m
5m 10m 20m 50m 100m 200m 500m 1
Fig.5 DC collector gain vs.
collector current ( )
Ta=125°C
25°C
−40°C
5m 10m 20m
50m 100m 200m 500m 1
COLLECTOR CURRENT : IC (A)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
0.3
0.2
IB=1mA
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig.3 Grounded emitter output
characteristics
Fig.4 DC current gain vs.
collector current ( )
200m
2mA
0.4
Fig.2 Grounded emitter propagation
characteristics
1m
1000
lC/lB=20
3mA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : lC (A)
1
0.6
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : lC (A)
500m
4mA
0
20
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1m
5mA
0.5
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
500
DC CURRENT GAIN : hFE
VCE=5V
2V
1V
500
6mA
10mA
0.8 9mA
8mA
0.7 7mA
0.1
1000
Ta=25°C
COLLECTOR CURRENT : IC (A)
75
Ta=125°C
25°C
−40°C
200m
100m
Ta=25°C
0.9
100
50
20
20m
50m
100m
200m
500m
EMITTER CURRENT : lE (A)
Fig.8 Transition frequency vs.
emitter current
Ta=25°C
200m
100m
50m
lC/lB=50
20
10
20m
10m
5m
2m
1m
1m 2m
5m 10m 20m
50m 100m 200m 500m 1
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
200
10
10m
1
500m
COLLECTOR CURRENT : IC (A)
Ta=25°C
f=100MHz
VCE=2V
500
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
100
1.0
Ta=25°C
VCE=2V
500m
1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR CURRENT : IC (A)
POWER DISSIPATION : PC / PC Max. (%)
zElectrical characteristic curves
1000
Ta=25°C
f=1MHz
lE=0A
500
200
100
50
20
10
5
2
1
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1