Download STTH60W03C

STTH60W03C
Turbo 2 ultrafast high voltage rectifier
Datasheet − production data
Features
A1
■
Ultrafast switching
■
Low reverse recovery current
■
Low thermal resistance
■
Reduces switching losses
■
ECOPACK®2 compliant component
K
A2
Description
A1
The STTH60W03C uses ST Turbo 2 300 V
technology. It is especially suited to be used for
DC/DC and DC/AC converters in secondary stage
of MIG/MMA/TIG welding machine. Housed in
ST's TO-247, this device offers high power
integration for all welding machines and industrial
applications.
June 2012
K
A2
TO-247
STTH60W03CW
Table 1.
Device summary
Symbol
Value
IF(AV)
2 x 30 A
VRRM
300 V
trr (typ)
25 ns
Tj
175 °C
VF (typ)
0.94 V
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Characteristics
1
STTH60W03C
Characteristics
Table 2.
Absolute ratings (limiting values, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
300
V
IF(RMS)
RMS forward current
50
A
IF(AV)
Average forward current, δ = 0.5
IFSM
Surge non repetitive forward current
Tstg
Storage temperature range
Tj
Table 3.
Tc = 110 °C
Per diode
30
Tc = 95 °C
Per device
60
tp = 10 ms sinusoidal
A
280
A
-65 to + 175
°C
+ 175
°C
Maximum operating junction temperature
Thermal resistance
Symbol
Parameter
Rth(j-c)
Junction to case
Rth(c)
Coupling
Value
Unit
Per diode
1.5
°C / W
Total
0.9
°C / W
0.3
°C / W
When diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
IR (1)
Reverse leakage current
Tj = 25 °C
Tj = 125° C
Tj = 25° C
VF (2)
Tj = 150 °C
Forward voltage drop
Tj = 25° C
Tj = 150° C
Min.
Max.
Unit
20
VR = VRRM
µA
20
200
1.45
IF = 30 A
0.94
1.15
V
1.7
IF = 60 A
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.85 x IF(AV) + 0.01 IF2(RMS)
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Typ
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1.18
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STTH60W03C
Table 5.
Characteristics
Dynamic electrical characteristics
Symbol
Parameter
IRM
Test conditions
Min.
Reverse recovery current
QRR
Reverse recovery charge
IF = 30 A, VR = 200 V
dIF/dt = -200 A/µs
Tj = 125 °C
Reverse recovery time
tfr
Forward recovery time
Forward recovery voltage
Figure 1.
Unit
7
9
A
nC
0.3
trr
VFP
Max.
180
Softness factor
Sfactor
Typ
Tj = 25 °C
IF = 1 A, VR = 30 V
dIF/dt = -100 A/µs
Tj = 25 °C
IF = 30 A, VFR = 1.5 V
dIF/dt = 200 A/µs
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
25
2.0
35
ns
180
ns
3.0
V
Forward voltage drop versus
forward current (per diode)
IFM(A)
PF(AV) (W)
1000.0
50
δ = 0.2
45
δ = 0.5
δ=1
Tj = 150 °C
(Maximum values)
δ = 0.1
40
100.0
δ = 0.05
35
Tj = 150 °C
(Typical values)
Tj = 25 °C
(Maximum values)
30
10.0
25
20
15
1.0
T
10
5
δ = tp/T
0
0
5
Figure 3.
10
15
20
VFM (V)
IF(AV)(A)
tp
25
30
35
0.1
0.0
40
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration
Zth(j-c)/Rth(j-c)
1.0
1.5
2.0
2.5
3.0
Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
IRM(A)
1.0
16
IF = IF(AV)
VR = 200 V
Tj = 125 °C
0.9
14
0.8
12
0.7
0.6
10
0.5
8
0.4
6
0.3
0.2
0.5
4
Single pulse
2
0.1
0.0
1.E-04
dIF/dt(A/µs)
tp(s)
0
1.E-03
1.E-02
1.E-01
1.E+00
0
50
100
150
200
250
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300
350
400
450
500
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Characteristics
Figure 5.
STTH60W03C
Reverse recovery time versus dIF/dt Figure 6.
(typical values, per diode)
QRR(nC)
trr(ns)
100
Reverse recovery charges versus
dIF/dt (typical values, per diode)
350
IF = IF(AV)
VR = 200 V
Tj = 125 °C
90
80
IF = IF(AV)
VR = 200 V
Tj = 125 °C
300
250
70
60
200
50
150
40
30
100
20
50
10
dIF/dt(A/µs)
dIF/dt(A/µs)
0
0
0
50
Figure 7.
100
150
200
250
300
350
400
450
500
Relative variations of dynamic
parameters versus junction
temperature
0
50
Figure 8.
100
150
200
250
300
350
400
450
500
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
S factor
2.5
0.8
IF = I F(AV)
VR = 200 V
Reference: Tj =125 °C
SFACTOR
IF = IF(AV)
VR = 200 V
Tj = 125 °C
0.7
2.0
0.6
1.5
0.5
0.4
1.0
0.3
0.2
IRM
0.5
0.1
0.0
25
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dIF/dt(A/µs)
Tj (°C)
QRR
0.0
50
75
100
125
0
50
100
150
200
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250
300
350
400
450
500
STTH60W03C
Figure 9.
Characteristics
Forward recovery time versus dIF/dt Figure 10. Transient peak forward voltage
(typical values, per diode)
versus dIF/dt (typical values, per
diode)
tfr(ns)
VFP(V)
180
5
IF = IF(AV)
VFR = 1.5 V
Tj = 125 °C
160
140
IF=I F(AV)
Tj=125 °C
4
120
3
100
80
2
60
40
1
20
0
150
dIF/dt(A/µs)
dIF/dt(A/µs)
200
250
300
350
400
450
500
0
100
150
200
250
300
350
400
450
500
Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode)
C(pF)
1000
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
100
VR(V)
10
1
10
100
1000
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Package information
2
STTH60W03C
Package information
●
Epoxy meets UL94, V0
●
Cooling method: by conduction (C)
●
Recommended torque value: 0.55 N·m (1.0 N·m maximum)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-247 dimensions
Dimensions
Ref.
V
V
Dia
A
H
L5
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.85
5.15
0.191
0.203
D
2.20
2.60
0.086
0.102
E
0.40
0.80
0.015
0.031
F
1.00
1.40
0.039
0.055
F1
3.00 typ.
0.118 typ.
F2
2.00 typ.
0.078 typ.
F3
2.00
2.40
0.078
0.094
F4
3.00
3.40
0.118
0.133
G
10.90 typ.
0.429 typ.
L
L2
L4
F2
F1
L1
F3
V2
F4
D
L3
H
15.45
15.75
0.608
0.620
L
19.85
20.15
0.781
0.793
L1
3.70
4.30
0.145
0.169
L2
F(x3)
L3
M
14.20
14.80
0.728 typ.
0.559
0.582
E
G
L4
34.60 typ.
1.362 typ.
L5
5.50 typ.
0.216 typ.
M
2.00
3.00
0.078
0.118
V
5° typ.
5° typ.
V2
60° typ.
60° typ.
Dia.
6/8
18.50 typ.
3.55
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3.65
0.139
0.143
STTH60W03C
3
Ordering information
Ordering information
Table 7.
4
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTH60W03CW
STTH60W03CW
TO-247
4.46 g
50
Tube
Revision history
Table 8.
Document revision history
Date
Revision
07-June-2012
1
Changes
First issue.
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STTH60W03C
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