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Download Bipolar Transistor 30V, 700mA VCE(sat);110mV(typ.) Single PNP CPH3
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30A02CH Ordering number : EN7358A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 30A02CH Low-Frequency General-Purpose Amplifier Applications Applications • Low-frequency Amplifier, high-speed switching, small motor drive Features • • • Large current capacitance Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=580mΩ [IC=0.7A, IB=35mA] Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg --30 V --30 V --5 --700 --1.4 A 700 mW Mounted on a ceramic board (600mm2×0.8mm) 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 30A02CH-TL-E 0.6 2.9 0.15 Packing Type: TL Marking 0.05 LOT No. 0.2 AL 3 1.6 2.8 V mA 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 62012 TKIM/O3003 TSIM TA-100124 No.7358-1/6 30A02CH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max ICBO IEBO hFE VCB= --30V, IE=0A VEB= --4V, IC=0A VCE= --2V, IC= --10mA fT Cob VCE= --10V, IC= --50mA VCB= --10V, f=1MHz 520 VCE(sat) VBE(sat) IC= --200mA, IB= --10mA IC= --200mA, IB= --10mA --110 --220 --0.9 --1.2 V(BR)CBO V(BR)CEO IC= --10μA, IE=0A IC= --1mA, RBE=∞ --30 --30 V V(BR)EBO ton IE= --10μA, IC=0A --5 V tstg tf See specified Test Circuit. 200 --100 nA --100 nA 500 MHz 4.7 pF mV V V 35 ns 125 ns 25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR 50Ω RB RL + + 220μF 470μF VBE=5V VCC= --12V IC=20IB1= --20IB2= --300mA Ordering Information Package Shipping memo CPH3 3,000pcs./reel Pb Free --400 --300 0 --3 mA --2 5mA -- VCE= --2V A --15m A --10m --7mA --5mA --3mA --2mA --1mA --200 --500μA --100 0 0 IC -- VBE --800 20mA --700 Collector Current, IC -- mA --500 -mA 40mA Collector Current, IC -- mA --600 IC -- VCE --50 --700 --600 --500 --400 Ta=7 5°C 25°C --25°C Device 30A02CH-TL-E --300 --200 --100 IB=0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IT05049 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT05050 No.7358-2/6 30A02CH hFE -- IC 1000 Ta=75°C 25°C 5 DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 VCE(sat) -- IC --1000 VCE= --2V --25°C 3 2 IC / IB=20 7 5 3 2 --100 100 7 5 5°C 5 7 Ta= °C 5 --2 5°C 3 2 2 3 --1.0 2 3 5 7 --10 3 2 5 7 --100 2 3 --10 --1.0 5 7--1000 IT05051 Collector Current, IC -- mA --1000 7 5 3 2 5°C C 25° 5 -- 3 C 25° 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 2 3 5 7 --100 2 5 3 2 --1.0 Ta= --25°C 7 75°C 5 25°C 3 2 2 3 5 7 --10 2 3 5 7 --100 2 Gain-Bandwidth Product, f T -- MHz Output Capacitance, Cob -- pF 5 3 2 5 7 2 --10 Collector-to-Base Voltage, VCB -- V 1kΩ ON Resistance, Ron -- Ω OUT 1kΩ 2 IB 10 7 5 3 2 1.0 7 5 3 2 3 5 7 --10 2 3 5 7 --100 2 3 5 7--1000 IT05052 PC -- Ta 700 M ou nt 600 500 ed on ac er am ic 400 bo ar d( 60 0m 300 m2 ✕ 0. 200 8m m ) 100 2 0.1 --0.1 2 800 IN 3 3 Collector Current, IC -- mA Ron -- IB f=1MHz 5 IT05053 Collector Dissipation, PC -- mW 100 7 5 7 100 --1.0 5 3 5 7--1000 IT05056 VCE= --10V 7 3 3 f T -- IC 1000 f=1MHz 2 5 7--1000 IT05054 IC / IB=20 Collector Current, IC -- mA Cob -- VCB 0.1 --1.0 3 VBE(sat) -- IC --0.1 --1.0 5 7--1000 IT05055 Collector Current, IC -- mA 10 5 7 --10 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 7 Ta= 3 --10 IC / IB=50 --100 7 2 Collector Current, IC -- mA VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 0 2 3 5 7 --1.0 2 Base Current, IB -- mA 3 5 7 --10 IT06403 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05047 No.7358-3/6 30A02CH Embossed Taping Specification 30A02CH-TL-E No.7358-4/6 30A02CH Outline Drawing 30A02CH-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7358-5/6 30A02CH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.7358-6/6