Download RB162M-30

Data Sheet
Schottky Barrier Diode
RB162M-30
lExternal Dimensions(Unit : mm)
lApplications
General rectification
lLand Size Figure(Unit : mm)
0.1±0.1
0.05
1.2
0.85
1.6±0.1
3.5±0.2
2.6±0.1
3.05
lFeatures
1)Small power mold type.(PMDU)
2)High reliability
PMDU
lConstruction
Silicon epitaxial
lStructure
0.9±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
0.8±0.1
lTaping Dimensions(Unit : mm)
4.0±0.1
1.81±0.1
8.0±0.2
3.71±0.1
0.25±0.05
1.75±0.1
φ 1.55±0.05
2.0±0.05
3.5±0.05
4.0±0.1
φ 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
30
V
Reverse voltage (DC)
VR
30
V
Average rectified forward current (*1)
Io
1
A
IFSM
30
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Forward current surge peak (60Hz・1cyc)
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF1
-
0.44
0.52
V
IF=1.0A
Reverse current
IR
-
10
100
mA
VR=30V
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A
Data Sheet
RB162M-30
10000
1
Ta = 150°C
1000
REVERSE CURRENT:IR(mA)
FORWARD CURRENT:IF(A)
Ta = 150°C
Ta = 125°C
0.1
Ta = 75°C
0.01
Ta = 25°C
100
Ta = 125°C
10
Ta = 75°C
1
Ta = 25°C
0.1
Ta = -25°C
Ta = -25°C
0.001
0
100
200
300
400
0.01
500
1000
0
5
10
15
20
30
550
f = 1MHz
Ta=25°C
VF=1A
n=30pcs
FORWARD VOLTAGE:VF(mV)
525
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
100
500
475
AVE : 439.2mV
450
425
10
0
5
10
15
20
25
400
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
30
350
Ta=25°C
VR=30V
n=30pcs
20
15
AVE : 6.1mA
10
300
275
AVE : 237pF
250
5
225
0
200
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
n=10pcs
325
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(mA)
25
2/4
2012.08 - Rev.A
30
IFSM
RESERVE RECOVERY TIME:trr(ns)
150
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RB162M-30
8.3ms
125
1cyc.
100
AVE : 73.5A
75
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
AVE : 8.4ns
10
5
0
50
IFSM DISRESION MAP
trr DISPERSION MAP
1000
1000
IFSM
8.3ms 8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
1cyc.
100
10
1
10
100
10
100
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
0.8
0.7
Rth(j-a)
100
0.6
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-c)
10
Mounted on epoxy board
IM=10mA
IF=1A
1
Sin(θ＝180)
0.5
D = 1/2
0.4
0.3
DC
0.2
time
0.1
0.001
time
0.1
1ms 300ms
0.1
10
0
1000
0.5
1
1.5
2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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0
3/4
2012.08 - Rev.A
2.5
0.100
2.0
0.050
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.075
D = 1/2
DC
0.025
0.000
Data Sheet
RB162M-30
10
20
1.5
Sin(θ = 180)
DC
1.5
D=t/T
VR=15V
Tj=150°C
D = 1/2
1
Sin(θ = 180)
0.5
0
25
50
75
100
125
150
No Break at 30kV
VR
T
0
30
25
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2
D = 1/2
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
Io
t
D=t/T
VR=15V
Tj=150°C
1.0
0.0
30
0A
0V
t
T
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
2.5
Io
VR
0.5
Sin(θ = 180)
0
DC
0A
0V
20
15
10
AVE : 4.4kV
5
0
25
50
75
100
125
0
150
CASE TEMPARATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2012.08 - Rev.A
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A