Download RB558VA150

Data Sheet
Schottky Barrier Diode
RB558VA150
lExternal Dimensions(Unit : mm)
lApplications
General rectification
lLand Size Figure(Unit : mm)
0.17±0.1
0.05
1.1
2.5±0.2
1.9±0.1
lFeatures
1)Small power mold type.(TUMD2)
2)High reliability
3)AEC-Q101 qualified
0.8 0.5
2.0
1.3±0.05
TUMD2
lConstruction
Silicon epitaxial
lStructure
0.8±0.05
0.6±0.2
0.1
ROHM : TUMD2
Manufacture Date
lTaping Dimensions(Unit : mm)
0.25±0.05
2.75
2.8±0.05
8.0±0.2
3.5±0.05
1.75±0.1
φ 1.55±0.1
0
2.0±0.05
4.0±0.1
φ 1.0±0.2
0
4.0±0.1
1.43±0.05
0.9±0.08
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive)
VRM
150
V
Reverse voltage (DC)
VR
150
V
Average rectified forward current (*1)
Io
0.5
A
IFSM
3
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C
Forward current surge peak (60Hz・1cyc)
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
-
-
0.95
V
IF=0.5A
Reverse current
IR
-
-
0.5
mA
VR=150V
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A
Data Sheet
RB558VA150
100000
1
Ta = 150°C
0.1
10000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Ta = 150°C
Ta = 125°C
Ta = 75°C
Ta = 25°C
0.01
200
400
600
Ta = 125°C
Ta = 75°C
100
Ta = 25°C
10
Ta = -25°C
1
Ta = -25°C
0.001
1000
800
0.1
1000
0
50
100
830
100
f = 1MHz
Ta=25°C
VF=0.5A
n=30pcs
FORWARD VOLTAGE:VF(mV)
825
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
150
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
10
820
815
AVE : 805.1mV
810
805
1
0
5
10
15
20
25
800
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
50
30
Ta=25°C
VR=150V
n=30pcs
20
AVE : 15.2nA
15
10
40
35
30
5
25
0
20
AVE : 24.0pF
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Ta=25°C
f=1MHz
VR=0V
n=10pcs
45
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
25
2/4
2012.08 - Rev.A
30
30
25
25
IFSM
RESERVE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RB558VA150
8.3ms
1cyc.
20
AVE : 13.0A
15
10
5
0
Ta=25°C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
20
AVE : 10.2ns
15
10
5
0
IFSM DISRESION MAP
trr DISPERSION MAP
100
100
IFSM
8.3ms 8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
1cyc.
10
1
1
10
10
1
100
time
1
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.6
1000
IM=10mA
IF=0.5A
0.5
D = 1/2
time
1ms 300ms
Rth(j-a)
100
Rth(j-c)
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
Mounted on epoxy board
0.4
Sin(θ＝180)
0.3
DC
0.2
0.1
10
0.001
0.01
0.1
1
10
100
0
1000
0.5
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2012 ROHM Co., Ltd. All rights reserved.
0
3/4
2012.08 - Rev.A
Data Sheet
RB558VA150
1.5
0.0025
0.0015
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
REVERSE POWER
DISSIPATION:PR (W)
0.0020
DC
D = 1/2
0.0010
Sin(θ = 180)
1
0
50
100
Sin(θ = 180)
DC
D=t/T
VR=75V
Tj=150°C
25
50
75
100
125
150
D = 1/2
0.5
Sin(θ = 180)
2.5
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
VR
T
1
0
3
Io
t
D=t/T
VR=75V
Tj=150°C
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
0A
0V
T
0.5
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
1.5
t
D = 1/2
0
150
Io
VR
DC
0.0005
0.0000
0A
0V
2
AVE : 1.18kV
1.5
1
AVE : 0.39kV
0.5
0
0
25
50
75
100
125
0
150
CASE TEMPARATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
4/4
2012.08 - Rev.A
Notice
Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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© 2012 ROHM Co., Ltd. All rights reserved.
R1120A