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Irradiation test of CW bases Yu. Gilitsky / IHEP (Protvino) 1/10 The irradiation test was done to compare performance of different CW configurations at high doses. The test was conducted 12-18 Nov 2008 at the HiLum facility (IHEP, Protvino) constructed for the irradiation tests of the ATLAS LAr. The 50 GeV proton beam (extracted using bent crystal technique) has intensity up to 1012 p/spill (9 sec interval, 1.7 sec duration) Four samples with different configurations were places behind Absorber I (1λI steel). UCTRL was fixed to ~2V by a resistor divider arranged on each board. The output HV was monitored during the whole irradiation period. ECAL CW samples 2/10 Proton beam 50 GeV Actual beam position Expected beam position Absorber I (1 λ0 of steel) D1 CW1 D2 CW2 D3 CW3 D4 CW4 D1-D4 – film dosimeters CW # config details krad CW1 HCALmc2 Cf=100pF, Rf=62kΩ, CJ=47pF, C1=C2=0, RJ=0 800 CW2 ECAL orig C1=C2=47nF (C1MV), Rf=0, Cf=0, CJ=0, RJ=0 900 CW3 HCALmc1 Cf=100pF, Rf=62kΩ, CJ=47pF, C1=C2=0, RJ=5.6kΩ 700 CW4 ECALmc C1=C2=47nF, Rf=62kΩ, Cf=100pF, CJ=0, RJ=0 500 3/10 Protons rate from beam monitors start of degradation CW1 and CW3 start of irradiation 4/10 HV, V Significant HV drop was observed in both HCALmc bases after ~500 krad; the ECALxx bases were not affected. In order to proof that the drop was determined by the configuration, in 5 days after the irradiation the CW2 base (900 krad) was modified to: ▪“ECAL+HCAL” (ECALorig + Rf=62kΩ+Cf=100pF): OK 900 800 700 600 500 400 CW1 CW2 CW3 CW4 300 200 100 0 12 13 14 15 ▪ECALmc (C1=C2=47nF): OK 16 17 18 November 2008 ▪HCALmc (C1=C2=0): HV≈670V, unstable ▪ECALmc: OK High rate test (with PM) in the ECALmc mode: ▪ HV=1500V stability checked up to 30 μA OK ▪ HV=850V – checked up to 50 μA OK One can conclude that configurations where C1 is present (connected either to MV or to ground) (“ECAL” type) are more “rad hard” than those where C1 is absent (“HCAL” type) Summary on HVout in “HCAL” modes HVout in HCAL mode, V base expected right after irradiation in 2 days CW1 888 345 550 CW2 886 CW3 837 CW4 835 in 5 days in 50 days 730 670 410 544 720 5/10 On 08/01/09 (~50 days after the irradiation) the CW1 base (800 krad) was studied in details in both “HCAL” and “ECAL” configurations. Switching was done by soldering / unsoldering capacitors: “HCAL”: CJ=47pF present, C1 and C2 absent “ECAL”: CJ absent, C1=47 nF and C2=3.3nF present always present were: RJ=10kΩ, Rf=62kΩ and Cf=100pF HVOUT as a function of UCTRL Conditions: MV=80V, LV=+6V -6V Same conversion factor, but different max HV, in “HCAL” and “ECAL” modes. For more detailed studies 4 sets of oscillograms were taken: # conf UCTRL, V HV, V 1 2 3 4 HCAL HCAL ECAL ECAL 1.174 502 ≈4.4 730 1.756 783 2.495 1140 *saturated* Each set consisted of ~20 oscillograms taken in different points, such that it was possible to calculate currents in places of interest. 6/10 set #2 set #2 set #4 set #2 As a result of irradiation: ▪The oscillator produces 25 kHz sine-like wave, 4 V p-p. ▪op amp gain is ~2-5 at 25 kHz (UOUT(t) and ΔUIN(t) of the oscillator op amp shown; note gain = UOUT/ΔUIN ≈ 5 and ~90o phase shift of UOUT wrt UIN) ▪ DC gain is at least several hundred: < 20 mV change in ΔUIN flips the output (measured later 14/01/09) set #2 ▪op amp gets significant output impedance (output current limitation?); differential output impedance of saturated regulator op amp shown, set #2 ▪npn transistor β’s become 5-7 (Q1 & Q2 shown) 7/10 Looking at “HCAL” set #2, to find out the reason for limiting HV IPUMP (current in RJ=10k): Q3 part (up) OK, problem with Q2 part (down) Q1 is always saturated, Q2 active insufficient current into Q2 base Q1 IC NB IC negative (reverse) for part of period 8/10 Compare to “ECAL” set #4, IPUMP: both Q3 and Q2 half-periods OK HV=1140 V Factor of >2 wrt “HCAL” in charge injected into the Q2 base 9/10 Possible explanation of the difference between “HCAL” and “ECAL” type bases Because of low gain of irradiated transistors, the irradiated oscillator op amp (with lowered load capabilities) has to draw non-negligible current into Q2 and Q3 bases. The presence of capacitor C2b means that the amount of charge delivered into [Q2 b-e junction || R2e] during the half period when Q2 is open should be returned back during next half period, when it is closed (Q3 open) In the “ECAL” configuration, C2b is recharged from C1 through R2e and R2b. In the “HCAL” configuration, the return path is more difficult: as C1 is not present, charge comes from the regulator op amp, passing through R1b, b-c junction of Q1 and then R2e and R2b (this is the reason why in the “HCAL” configuration the Q1 collector current is reversed during ~ half a period). And max possible returned charge is insufficient for operation at higher HV. As a proof of correct understanding the problem: to boost the C2b recharge in the “HCAL” configuration, a diode was added || R2e. The max HV increased till the same 1320 V as in the “ECAL” configuration. 10/10