Download Microfabrication

IC Layout
Adapted from Digital Integrated Circuits, 2nd Ed.
1
Contents




Software overview
Design Rules and Design rules check (DRC)
Layers
 N-well
 Active
 Metals
 Poly
Interconnects
 R, L, C
 Propagation speed of signals in lines
Adapted from Digital Integrated Circuits, 2nd Ed.
2
Design Software
L-Edit
Circuit at the mask
(layout) level
S-Edit
Circuit at the
Schematics level
LVS
consistency
mask = schematic ?
Simulation: T-Spice or any Spice based engine
Adapted from Digital Integrated Circuits, 2nd Ed.
3
Design Software
L-Edit
Circuit at the mask
(layout) level
5
1
4
S-Edit
Circuit at the
Schematics level
LVS
consistency
mask = schematic ?
2
3
Simulation: T-Spice or any Spice based engine
Adapted from Digital Integrated Circuits, 2nd Ed.
4
Process Layers
Adapted from Digital Integrated Circuits, 2nd Ed.
5
The N-Well




Assuming a p-type wafer, nchannel transistors are fabricated
directly in the wafer; p-channel
are fabricated in an “n-well”
Processes with n-well over psubstrates are called n-well
processes
Substrate is also known as bulk or
body
N-well forms a diode (normally
reverse biased) with the substrate
Adapted from Digital Integrated Circuits, 2nd Ed.
6
N-Well: Design rules



Every layer has
certain rules to
satisfy in order to
be safely built
MOSIS webpage
data for AMI 0.5
R(N_Well) =
810Ω/□
Exercise: Layout
and extract a
resistor (minimum
width) of 8K
Adapted from Digital Integrated Circuits, 2nd Ed.
7
N-well diode capacitance

When the diode is reverse-biased
(typical situation)
Cj 

C j0
 1  vd 

 0 

m
Two components: bottom capacitance
and sidewall capacitance
 N AND 

2
n
 i 
0  VT ln 
C j 0  C j 0b  C j 0 s
C j 0b 
C j0s 
Capacitance per area × bottom area
Capacitance per area × depth of well × perimeter
Adapted from Digital Integrated Circuits, 2nd Ed.
8
N-well diode capacitance


From MOSIS data, we know: C j 0  40aF / m2
Our resistor has a bottom capacitance
C j 0  12   119   40aF / m 2 
3.6 m  35.7 m  40aF / m 2  5.1 fF

And no more data …

Approximate worst case RC
  40 ps
Adapted from Digital Integrated Circuits, 2nd Ed.
9
Active Layer
Adapted from Digital Integrated Circuits, 2nd Ed.
10
Active Layer



Active layers, both n+ and p+ are used to make the
source and drain of MOSFET’s
Active defines the oxide mask where doping will
take place: Regions outside Active have FOX
(LOCOS)
N select and P select define the doping mask
Adapted from Digital Integrated Circuits, 2nd Ed.
11
Act Design Rules
Adapted from Digital Integrated Circuits, 2nd Ed.
12
N+ and P+ rules
Adapted from Digital Integrated Circuits, 2nd Ed.
13
Act contact rules

In this case, there is a
special contact to join
metal and active
Adapted from Digital Integrated Circuits, 2nd Ed.
14
Poly
Adapted from Digital Integrated Circuits, 2nd Ed.
15
Poly Layer



Polysilicon is made up of small crystalline regions of silicon
Poly is used for the gates of MOS transistors
They can make resistors and local connections for transistors
Adapted from Digital Integrated Circuits, 2nd Ed.
16
Poly rules
Adapted from Digital Integrated Circuits, 2nd Ed.
17
Poly contact rules
Adapted from Digital Integrated Circuits, 2nd Ed.
18
Metal Layers
Adapted from Digital Integrated Circuits, 2nd Ed.
19
The Metal layers



Metal layers are used to interconnect devices (transistors, resistors,
inductors and capacitors)
Vias are used to interconnect the different metal layers
Example: AMI 0.5 (three metals)
Adapted from Digital Integrated Circuits, 2nd Ed.
20
Metal Design rules



Metals 1, 2 and 3 rules
 Spacing rules
 Overlap rules
Vias 1 and 2 rules
In general, higher metal layers require bigger dimensions and
spacing
Adapted from Digital Integrated Circuits, 2nd Ed.
21
Metal 1 Design Rules: Separation
Adapted from Digital Integrated Circuits, 2nd Ed.
22
Metal 1 Design Rules: Cnt Overlap
Adapted from Digital Integrated Circuits, 2nd Ed.
23
Metal 2 rules: Separation
Adapted from Digital Integrated Circuits, 2nd Ed.
24
Metal 2 Design Rules: via1 Overlap
Adapted from Digital Integrated Circuits, 2nd Ed.
25
Metal 3 rules: Separation
Adapted from Digital Integrated Circuits, 2nd Ed.
26
Metal 3 Design Rules: via2 Overlap
Adapted from Digital Integrated Circuits, 2nd Ed.
27
Via 1 rules
Adapted from Digital Integrated Circuits, 2nd Ed.
28
Via 2 rules
Adapted from Digital Integrated Circuits, 2nd Ed.
29
Interconnects
Adapted from Digital Integrated Circuits, 2nd Ed.
30
The Wire
transmitters
schematics
receivers
physical
Adapted from Digital Integrated Circuits, 2nd Ed.
31
Interconnect Impact on Chip
Adapted from Digital Integrated Circuits, 2nd Ed.
32
Wire Models
All-inclusive model
Capacitance-only
Adapted from Digital Integrated Circuits, 2nd Ed.
33
Impact of Interconnect Parasitics


Interconnect parasitics
 reduce reliability
 affect performance and power consumption
Classes of parasitics
 Capacitive
 Resistive
 Inductive
Adapted from Digital Integrated Circuits, 2nd Ed.
34
Nature of Interconnect
No of nets
(Log Scale)
Local Interconnect
Pentium Pro (R)
Pentium(R) II
Pentium (MMX)
Pentium (R)
Pentium (R) II
Global Interconnect
SGlobal = SDie
Source: Intel
SLocal = STechnology
10
100
1,000
10,000
100,000
Length (u)
Adapted from Digital Integrated Circuits, 2nd Ed.
35
INTERCONNECT: Capacitance
Adapted from Digital Integrated Circuits, 2nd Ed.
36
Capacitance of Wire Interconnect
VDD
VDD
M2
Vin
Cgd12
M4
Cg4
Cdb2
Vout
Cdb1
Cw
Vout2
Cg3
M3
M1
Interconnect
Fanout
Simplified
Model
Vin
Vout
CL
Adapted from Digital Integrated Circuits, 2nd Ed.
37
Capacitance: The Parallel Plate Model
Current flow
L
Electrical-field lines
W
H
tdi
Dielectric
Substrate
cint 
 di
t di
WL
S Cwire 
S
1

S  SL SL
Adapted from Digital Integrated Circuits, 2nd Ed.
38
Permittivity
Adapted from Digital Integrated Circuits, 2nd Ed.
39
Fringing Capacitance
(a)
H
W - H/2
+
(b)
Adapted from Digital Integrated Circuits, 2nd Ed.
40
Fringing versus Parallel Plate
(from [Bakoglu89])
Adapted from Digital Integrated Circuits, 2nd Ed.
41
Interwire Capacitance
fringing
parallel
Adapted from Digital Integrated Circuits, 2nd Ed.
42
Impact of Interwire Capacitance
(from [Bakoglu89])
Adapted from Digital Integrated Circuits, 2nd Ed.
43
Wiring Capacitances (0.25 mm CMOS)
Adapted from Digital Integrated Circuits, 2nd Ed.
44
AMI 0.5µm process capacitances

Area capacitance (all values in aF/m2 )
M1
M2
M3
substrate 32
16
10
M1
31
13
M2

31
Fringe capacitances (all values in aF/m)
M1
M2
M3
substrate 76
59
39
M1
51
33
M2
Adapted from Digital Integrated Circuits, 2nd Ed.
52
45
INTERCONNECT: Resistance
Adapted from Digital Integrated Circuits, 2nd Ed.
46
Wire Resistance
R= L
HW
Sheet Resistance
Ro
L
H
R1
W
Adapted from Digital Integrated Circuits, 2nd Ed.
R2
47
Interconnect Resistance
Adapted from Digital Integrated Circuits, 2nd Ed.
48
Dealing with Resistance



Selective Technology Scaling
Use Better Interconnect Materials
 reduce average wire-length
 e.g. copper, silicides
More Interconnect Layers
 reduce average wire-length
Adapted from Digital Integrated Circuits, 2nd Ed.
49
Polycide Gate MOSFET
Silicide
PolySilicon
SiO2
n+
n+
p
Silicides: WSi 2, TiSi 2, PtSi 2 and TaSi
Conductivity: 8-10 times better than Poly
Adapted from Digital Integrated Circuits, 2nd Ed.
50
Sheet Resistance
Adapted from Digital Integrated Circuits, 2nd Ed.
51
Modern Interconnect
Adapted from Digital Integrated Circuits, 2nd Ed.
52
Example: Intel 0.25 micron Process
5 metal layers
Ti/Al - Cu/Ti/TiN
Polysilicon dielectric
Adapted from Digital Integrated Circuits, 2nd Ed.
53
Resistance in AMI 0.5µm process

Resistance
Rs

A line of minimum
width and 1mm long
(1100 and 666 □ long,
resp.)
Rs
M1
M2
M3
0.09Ω/□
0.09 Ω/□
0.05 Ω/□
M1
M2
M3
100 Ω
100 Ω
33 Ω
Adapted from Digital Integrated Circuits, 2nd Ed.
54
Vias parasitics

Vias exhibit a contact resistance given by the process
Contact R
[Ω]

P+
N+
Poly
M1
M2
M3
126
57.5
16
□
0.82
0.79
They also have a current limitation given by the
electromigration phenomenom. Typically, 0.5mA/cnt
Adapted from Digital Integrated Circuits, 2nd Ed.
55
Metal Current Capacity


Due to Electromigration, wire can be damaged
For Aluminum, the maximum current density (rule of thumb)
is:
 mA 
1

 m 
Adapted from Digital Integrated Circuits, 2nd Ed.
56
INTERCONNECT: Inductance
Adapted from Digital Integrated Circuits, 2nd Ed.
57
Metal Parasitics: L

A metal line exhibits an inductance that can be estimated as:
L


1.25
w
w

 1.393  0.667 ln   1.44
h
h

(nH / mm)
Assumption: w > h
L is proportional to w and inversely prop. to h
Adapted from Digital Integrated Circuits, 2nd Ed.
58
Metal Parasitics: L



Ground bounce: The dI/dt along power lines actually produce a voltage
drop due to the inductance
Increase the width of the conductors supplying current
Increase the capacitance of the conductors supplying current
Adapted from Digital Integrated Circuits, 2nd Ed.
59
Interconnect
Modeling
Adapted from Digital Integrated Circuits, 2nd Ed.
60
The Lumped Model
Vo ut
cwi re
Driver
Rdriver
V
out
Vin
Clumped
Adapted from Digital Integrated Circuits, 2nd Ed.
61
The Lumped RC-Model: Elmore Delay
Adapted from Digital Integrated Circuits, 2nd Ed.
62
The Ellmore Delay: RC Chain
Adapted from Digital Integrated Circuits, 2nd Ed.
63
Wire Model
Assume: Wire modeled by N equal-length segments
For large values of N:
Adapted from Digital Integrated Circuits, 2nd Ed.
64
The Distributed RC-line
Adapted from Digital Integrated Circuits, 2nd Ed.
65
Step-response of RC wire as a
function of time and space
2.5
x= L/10
2
voltage (V)
x = L/4
1.5
x = L/2
1
x= L
0.5
0
0
0.5
1
1.5
2
2.5
3
time (nsec)
3.5
4
Adapted from Digital Integrated Circuits, 2nd Ed.
4.5
5
66
RC-Models
Adapted from Digital Integrated Circuits, 2nd Ed.
67
Driving an RC-line
Rs
(r w,cw,L)
Vout
V
in
Adapted from Digital Integrated Circuits, 2nd Ed.
68
Design Rules of Thumb

rc delays should only be considered when tpRC >> tpgate of the driving
gate
Lcrit >>  tpgate/0.38rc

rc delays should only be considered when the rise (fall) time at the line
input is smaller than RC, the rise (fall) time of the line
trise < RC

when not met, the change in the signal is slower than the
propagation delay of the wire
© MJIrwin, PSU, 2000
Adapted from Digital Integrated Circuits, 2nd Ed.
69
Appendix
Adapted from Digital Integrated Circuits, 2nd Ed.
70
AMI 0.5 typical parameters (T36s)
Adapted from Digital Integrated Circuits, 2nd Ed.
71
Appendix

Poly resistor layout
Adapted from Digital Integrated Circuits, 2nd Ed.
72
Poly: Resistor Design





MOSIS webpage data for AMI 0.5 R(N_Well) = 22Ω/□
Exercise: Layout and extract a resistor (minimum width) of
1K. Try to make a square design
Number of squares to achieve the desired resistance =
1000/22 □ = 45.5
Setting W = 2  then L = 91 
Run DRC, extract and verify
Adapted from Digital Integrated Circuits, 2nd Ed.
73
Folded Resistor Design:


Folding the resistor leads to compact designs
Squares and corners contribute partially to the material
resistance
Adapted from Digital Integrated Circuits, 2nd Ed.
74
Folded Resistor Design:

Calculation for a square layout

Assume Ns segments
of width Ws, length
Ls and spacing Wg

The number of
squares is:
Wg 
 Ls  2Ws 
 Ls 

N   2 (0.8)  2 
  ( Ns  2)
  ( Ns  1) 2(0.56) 

Ws 
 Ws 
 Ws 


For a square design:
Ls  2Ws  ( Ns  1)(Ws  Wg )  Ws
Adapted from Digital Integrated Circuits, 2nd Ed.
75
Folded Resistor Design:

For the 1K resistor,
 N□ = 45.5
 Ns=5.1
 Ls=4.53
Adapted from Digital Integrated Circuits, 2nd Ed.
76