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iSIGHT Applications in Electronics Industry iSIGHT Customers in Electronics • Advanced Institute of Technology and Science(J) • Aisin • Black & Decker • Canon • Delphi Packard Electric • Denso • Emerson Motor • Fuji XEROX • Fujitsu • General Electric • Hitachi • Kyocera • Matsushita/Panasonic • Mitsubishi Electric • Motorola • NEC • Ricoh • Samsung • Sanyo • Sharp • Sony • Toshiba • XEROX etc. Applications in Electronics Industry • • • • • • • • • • • • • • • • • • Heat Exchange Unit Optimization Halogen-IR Lamp Design Space Power Converter Weight Reduction 3D Coil and Magnetic Field for controlling Deflection Yoke of CRT 3D Coil and Magnetic Field for controlling Electron Beam Orbit of Flat TV Rubber Switch Optimization Latch Bracket Shape Optimization Plastic Injection Molding Optimization Plastic Injection - Structure Analysis MDO Semiconductor Circuit Design Optimization LCD Circuit Design Optimization Robust Design for coating materials of semiconductor ECU Design & Controlling Optimization Refrigerator Internal Flow for minimizing Electric Power Consumption Air Conditioning System Optimization Vacuum Cleaner Intake Mechanism for maximum Inhalation with minimum Electric Power Consumption No Exhaust Vacuum Cleaner Laundry Machine Structure for minimizing Vibration and Noise IH Rice Cooker Magnetic Field Optimization Automation & Integration of EDA Process in Semiconductor Design Automation & Integration Process Simulation Shape Simulation Mask Layout Functionality Simulation Logic Synthesis Device Simulation Latency Information Logic Simulation IC Test Parameter of Device Characteristics Circuit Simulation Failure Information Failure Simulation Failure Dictionary Device Design IC Design Failure Analysis Mask Layout & Testing Automation & Integration of EDA Process in System Design Automation/Integration/Optimization Analog Simulation Digital Simulation PCB Positioning & Wiring Prototype Test Software Design Physical System Test Failure Information I/O Design PCB Design Failure Analysis System Design & Testing Reliability Testing Hitachi Semiconductor Group: Robust Design of MOS Devices:DOE based TCAD Simulation Objective Yield Improvement Time Reduction of New Devices TCAD Calibration Requiring Robust Design of MOS Robust Design Issues Requiring Multi Variables Optimization DOE Process Calibration of Device Simulator Robust Design of MOS Devices Prototyping Error Factor Compounding Parametric Optimization Design Environment of MOS Devices Design Cycle Reduction Design Improvement 3 Month (Traditional Method) Threshold Voltage (Vth) Deviation --> 3 Weeks (Manual DOE/Taguchi Method) --> 3 Days (Automated DOE and Optimization by iSIGHT) ±0.08 --> ±0.03 SN Ratio Improvement: 25.7db --> 34.6db Hitachi Semiconductor Group: Robust Design of MOS Devices:DOE based TCAD Simulation Gate Electrode ○ Source Electrode Drain Electrode ○ ○ N N Id P Si Board MOS Device Concept(NMOS ) Model Parameter (Process) Process Flow Process Simulation Model Parameter (Device) Impurities Distribution Device Simulation Process Device Simulation Device Characteristics SAIT (Samsung Advanced Institute & Technology) ■ MEMS Switching Device Design • Problem Definition – 4 D.V.s for the membrane geometry – Must consider unwanted effects in manufacturing process – Minimize the actuation voltage of switch and maximize the recovery force – Highly non-linear property in relation between voltage and gap Switch On Switch Off SAIT (Samsung Advanced Institute & Technology) ■ Process to Design • • Maintask – Input 4 geometric design variables to Ansys for modeling – This model is provided for analysis of actuation voltage Subtask – From the geometry model and unwanted effects data, Abaqus and inhouse codes calculate the gap based on the voltage input and check the membrane is contacted or not. Due to the long running of Abaqus the actuation voltage must be found under 10 iterations in subtask by applying an optimization algorithm in a program. Traditional gradient based optimization algorithms do not work because it’s very highly non-linear. SAIT (Samsung Advanced Institute & Technology) ■ Simulation of problem • • Made simple simulation model of the actuation voltage problem by using Excel Interface Hooke-Jeeves algorithm is good for this problem SAIT (Samsung Advanced Institute & Technology) ■ RSM Model • • • Built RSM model by applying DOE in main task and finding the actuation voltage in subtask Tried to find minimized value Tried to analyze uncertainties in manufacturing process by applying MCS for the minima